Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IXTP Search Results

    SF Impression Pixel

    IXTP Price and Stock

    Littelfuse Inc IXTP80N10T

    MOSFET N-CH 100V 80A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP80N10T Tube 8,963 1
    • 1 $3.31
    • 10 $3.31
    • 100 $2.2469
    • 1000 $1.71011
    • 10000 $1.54488
    		Buy Now

    Littelfuse Inc IXTP10P50P

    MOSFET P-CH 500V 10A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP10P50P Tube 1,312 1
    • 1 $6.44
    • 10 $6.44
    • 100 $4.6016
    • 1000 $3.65418
    • 10000 $3.4241
    		Buy Now
    Rutronik IXTP10P50P Tube 300 50
    • 1 -
    • 10 -
    • 100 $4.66
    • 1000 $3.81
    • 10000 $3.81
    		Buy Now

    Littelfuse Inc IXTP42N25P

    MOSFET N-CH 250V 42A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP42N25P Tube 730 1
    • 1 $4.78
    • 10 $4.78
    • 100 $3.2482
    • 1000 $2.47226
    • 10000 $2.32789
    		Buy Now

    Littelfuse Inc IXTP300N04T2

    MOSFET N-CH 40V 300A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP300N04T2 Tube 468 1
    • 1 $6.08
    • 10 $6.08
    • 100 $4.3461
    • 1000 $3.45129
    • 10000 $3.23399
    		Buy Now

    Littelfuse Inc IXTP86N20T

    MOSFET N-CH 200V 86A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTP86N20T Tube 346 1
    • 1 $5.98
    • 10 $5.98
    • 100 $4.0603
    • 1000 $3.09036
    • 10000 $2.9099
    		Buy Now
    Find more IXTP price and stock on Findchips.com

    IXTP Datasheets (308)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXTP01N100 IXYS Original PDF
    IXTP01N100D IXYS 1000V high voltage MOSFET Original PDF
    IXTP02N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 200MA TO-220 Original PDF
    IXTP02N50D IXYS 500V high voltage MOSFET Original PDF
    IXTP05N100 IXYS 1000V high voltage MOSFET Original PDF
    IXTP05N100M IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 700MA TO-220 Original PDF
    IXTP05N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 500MA TO-263 Original PDF
    IXTP06N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 600MA TO-220 Original PDF
    IXTP08N100D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO220AB Original PDF
    IXTP08N100P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220 Original PDF
    IXTP08N120P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 800MA TO-220 Original PDF
    IXTP08N50D2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA TO220AB Original PDF
    IXTP100N04T2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-220 Original PDF
    IXTP100N15X4 IXYS MOSFET N-CH 150V 100A TO220 Original PDF
    IXTP102N15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-220 Original PDF
    IXTP10N60P IXYS PolarHV Power MOSFET Original PDF
    IXTP10N60PM IXYS PolarHV Power MOSFET Original PDF
    IXTP10P15T IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 10A TO-220 Original PDF
    IXTP10P50P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-220 Original PDF
    IXTP110N055P IXYS Discrete MOSFETs: Standard N-channel Types Original PDF
    ...

    IXTP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXTP220N04T2

    Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original     		PDF IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75

    3N120

    Abstract: on6017 IXTP3N120
    Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS


    Original     		PDF 3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120

    1n80

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF O-263 O-252 728B1 1n80

    01N100D

    Abstract: high voltage mosfet n-channel
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C


    Original     		PDF 01N100D O-220AB high voltage mosfet n-channel

    8N50P

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 8N50P O-263 O-220 O-263 O-220) 8N50P

    siemens i

    Abstract: 05N100
    Text: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40


    Original     		PDF 05N100 O-220AB O-263 siemens i

    1N100

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM


    Original     		PDF 1N100 O-263 O-220AB 1N100

    01N100D

    Abstract: 98809b ON 534 TO252 01N1
    Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000


    Original     		PDF 01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1

    5n60p

    Abstract: No abstract text available
    Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 5N60P O-220 O-263 O-263 O-220) 405B2 5n60p

    IXTQ48N20T

    Abstract: IXTP48N20T IXTP48N20 48N20 42100I
    Text: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF IXTA48N20T IXTP48N20T IXTQ48N20T O-263 O-220AB 062in. Plastic60 48N20T 2-12-10-A IXTQ48N20T IXTP48N20T IXTP48N20 48N20 42100I

    IXTY1R6N50D2

    Abstract: IXTP1R6N50D2
    Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous


    Original     		PDF IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2

    IXTP450P2

    Abstract: IXTH450P2 IXTQ450P2
    Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings


    Original     		PDF IXTP450P2 IXTQ450P2 IXTH450P2 400ns O-220AB 338B2 IXTP450P2 IXTH450P2 IXTQ450P2

    32P05T

    Abstract: No abstract text available
    Text: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA32P05T IXTP32P05T O-263 32P05T 1-22-10-A

    36p15

    Abstract: IXTP36P15P 3-26-08-B
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS


    Original     		PDF O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B

    52P10p

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS


    Original     		PDF O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p

    3n120

    Abstract: 3N110 98844
    Text: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF 3N120 3N110 3N110 O-220 O-263 98844

    2n60p

    Abstract: DS99422E
    Text: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient


    Original     		PDF 2N60P O-220 2n60p DS99422E

    180N055T

    Abstract: No abstract text available
    Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ


    Original     		PDF 180N055T O-220 180N055T

    Untitled

    Abstract: No abstract text available
    Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		PDF IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		PDF IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25


    Original     		PDF 12N50P 12N50P O-263 O-220

    IXTA90N055T2

    Abstract: *9956b IXTY90N055T2 IXTY90N055T
    Text: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C


    Original     		PDF IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 062in. O-220) O-252 O-220 *9956b IXTY90N055T

    9N60

    Abstract: MOSFET IXYS TO-263
    Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM


    Original     		PDF 9N60P 9N60P O-220 O-263 405B2 9N60 MOSFET IXYS TO-263

    IXTP4N50A

    Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
    Text: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80


    OCR Scan     		PDF IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460