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Littelfuse Inc IXTP96P085T MOSFET P-CH 85V 96A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP96P085T	Tube	7,171		1	1 $6.02 10 $6.02 100 $6.02 1000 $6.02 10000 $6.02	Buy Now
RS	IXTP96P085T	Bulk		8 Weeks	50	1 - 10 - 100 $4.89 1000 $4.89 10000 $4.89	Get Quote
Littelfuse Inc IXTP180N10T MOSFET N-CH 100V 180A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP180N10T	Tube	3,030		1	1 $5.35 10 $5.35 100 $3.3128 1000 $3.3128 10000 $3.3128	Buy Now
Littelfuse Inc IXTP48N20T MOSFET N-CH 200V 48A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP48N20T	Tube	938		1	1 $4.3 10 $4.3 100 $4.3 1000 $1.87988 10000 $1.87988	Buy Now
Littelfuse Inc IXTP05N100M MOSFET N-CH 1000V 700MA TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP05N100M	Tube	600		1	1 $4.27 10 $4.27 100 $4.27 1000 $1.86112 10000 $1.86112	Buy Now
Littelfuse Inc IXTP50N25T MOSFET N-CH 250V 50A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTP50N25T	Tube	518		1	1 $5.33 10 $5.33 100 $5.33 1000 $2.4755 10000 $2.4755	Buy Now
Newark	IXTP50N25T	Bulk	290		1	1 $2.33 10 $2.33 100 $2.33 1000 $2.33 10000 $2.33	Buy Now

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IXTP Datasheets (308)

Part	Manufacturer	Description	Datasheet Type	PDF
IXTP01N100	IXYS		Original	PDF
IXTP01N100D	IXYS	1000V high voltage MOSFET	Original	PDF
IXTP02N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 200MA TO-220	Original	PDF
IXTP02N50D	IXYS	500V high voltage MOSFET	Original	PDF
IXTP05N100	IXYS	1000V high voltage MOSFET	Original	PDF
IXTP05N100M	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 700MA TO-220	Original	PDF
IXTP05N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 500MA TO-263	Original	PDF
IXTP06N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 600MA TO-220	Original	PDF
IXTP08N100D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO220AB	Original	PDF
IXTP08N100P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1000V 800MA TO-220	Original	PDF
IXTP08N120P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 1200V 800MA TO-220	Original	PDF
IXTP08N50D2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 800MA TO220AB	Original	PDF
IXTP100N04T2	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 100A TO-220	Original	PDF
IXTP100N15X4	IXYS	MOSFET N-CH 150V 100A TO220	Original	PDF

IXTP102N15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 150V 102A TO-220	Original	PDF
IXTP10N60P	IXYS	PolarHV Power MOSFET	Original	PDF
IXTP10N60PM	IXYS	PolarHV Power MOSFET	Original	PDF
IXTP10P15T	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 10A TO-220	Original	PDF
IXTP10P50P	IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 500V 10A TO-220	Original	PDF
IXTP110N055P	IXYS	Discrete MOSFETs: Standard N-channel Types	Original	PDF

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IXTP Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IXTP220N04T2 Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40	Original	IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75	PDF
3N120 Abstract: on6017 IXTP3N120 Text: High Voltage Power MOSFETs IXTA 3N120 IXTP 3N120 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous ±20 V VGSM Transient ±30 V VDSS	Original	3N120 O-220 728B1 123B1 728B1 065B1 3N120 on6017 IXTP3N120	PDF
1n80 Abstract: No abstract text available Text: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	O-263 O-252 728B1 1n80	PDF
01N100D Abstract: high voltage mosfet n-channel Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D VDSS ID25 RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C;TJ = 25°C to 150°C	Original	01N100D O-220AB high voltage mosfet n-channel	PDF
8N50P Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 8N50P IXTP 8N50P VDSS ID25 RDS on = 500 = 8 = 0.8 V A Ω N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	8N50P O-263 O-220 O-263 O-220) 8N50P	PDF
siemens i Abstract: 05N100 Text: High Voltage MOSFET IXTA 05N100 VDSS IXTP 05N100 I D25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM Transient ±40	Original	05N100 O-220AB O-263 siemens i	PDF
1N100 Abstract: No abstract text available Text: High Voltage MOSFET IXTA 1N100 IXTP 1N100 = 1000 V = 1.5 A = 11 Ω RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±30 V VGSM	Original	1N100 O-263 O-220AB 1N100	PDF
01N100D Abstract: 98809b ON 534 TO252 01N1 Text: High Voltage MOSFET N-Channel, Depletion Mode IXTP 01N100D IXTU 01N100D IXTY 01N100D VDSS = 1000 V ID25 = 100 mA Ω RDS on = 110 Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C 1000	Original	01N100D O-220 405B2 01N100D 98809b ON 534 TO252 01N1	PDF
5n60p Abstract: No abstract text available Text: Advance Technical Information PolarHVTM Power MOSFET IXTA 5N60P IXTP 5N60P VDSS = 600 = 5 ID25 RDS on ≤ 1.6 V A W N-Channel Enhancement Mode TO-220 (IXTP) G Symbol VDSS VDGR VGSS VGSM Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	5N60P O-220 O-263 O-263 O-220) 405B2 5n60p	PDF
IXTQ48N20T Abstract: IXTP48N20T IXTP48N20 48N20 42100I Text: TrenchTM Power MOSFET IXTA48N20T IXTP48N20T IXTQ48N20T VDSS = 200V = 48A ID25 Ω RDS on ≤ 50mΩ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXTA) G S D (Tab) TO-220AB (IXTP) Symbol Test Conditions Maximum Ratings VDSS	Original	IXTA48N20T IXTP48N20T IXTQ48N20T O-263 O-220AB 062in. Plastic60 48N20T 2-12-10-A IXTQ48N20T IXTP48N20T IXTP48N20 48N20 42100I	PDF
IXTY1R6N50D2 Abstract: IXTP1R6N50D2 Text: Preliminary Technical Information IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 Depletion Mode MOSFET VDSX ID on RDS(on) N-Channel = > ≤ 500V 1.6A 2.3Ω Ω TO-252 (IXTY) G S D (Tab) Symbol Test Conditions VDSX TJ = 25°C to 150°C Maximum Ratings 500 V VGSX Continuous	Original	IXTY1R6N50D2 IXTA1R6N50D2 IXTP1R6N50D2 O-252 O-220) O-263 O-220 O-263 O-220AB IXTY1R6N50D2 IXTP1R6N50D2	PDF
IXTP450P2 Abstract: IXTH450P2 IXTQ450P2 Text: Advance Technical Information IXTP450P2 IXTQ450P2 IXTH450P2 PolarP2TM Power MOSFET VDSS ID25 = = ≤ = RDS on trr(typ) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode 500V 16A Ω 330mΩ 400ns TO-220AB (IXTP) G Symbol Test Conditions Maximum Ratings	Original	IXTP450P2 IXTQ450P2 IXTH450P2 400ns O-220AB 338B2 IXTP450P2 IXTH450P2 IXTQ450P2	PDF
32P05T Abstract: No abstract text available Text: IXTA32P05T IXTP32P05T TrenchPTM Power MOSFET VDSS ID25 RDS on = = ≤ - 50V - 32A Ω 39mΩ P-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 50 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA32P05T IXTP32P05T O-263 32P05T 1-22-10-A	PDF
36p15 Abstract: IXTP36P15P 3-26-08-B Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA36P15P IXTP36P15P IXTQ36P15P S G D TAB G D (TAB) D S Test Conditions VDSS TJ = 25°C to 150°C - 150 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ - 150 V VGSS	Original	O-263 IXTA36P15P IXTP36P15P IXTQ36P15P O-220 100ms 36P15P 36p15 3-26-08-B	PDF

52P10p Abstract: No abstract text available Text: Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P RDS on TO-247 (IXTH) TO-263 (IXTA) G VDSS ID25 S G D(TAB) D D(TAB) G Symbol Test Conditions Maximum Ratings VDSS	Original	O-263 IXTA52P10P IXTH52P10P IXTP52P10P IXTQ52P10P O-247 O-220 100ms 52P10p	PDF
3n120 Abstract: 3N110 98844 Text: ADVANCE TECHNICAL INFORMATION High Voltage Power MOSFETs IXTA/IXTP 3N120 IXTA/IXTP 3N110 N-Channel Enhancement Mode Avalanche Rated, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 3N120 3N110 1200 1100 V V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	3N120 3N110 3N110 O-220 O-263 98844	PDF
2n60p Abstract: DS99422E Text: PolarHVTM Power MOSFET IXTP 2N60P IXTY 2N60P VDSS ID25 RDS on = 500 = 2 ≤ 5.1 V A Ω N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR Test Conditions TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ VGSS VGSM Continuous Transient	Original	2N60P O-220 2n60p DS99422E	PDF
180N055T Abstract: No abstract text available Text: Advance Technical Information IXTQ 180N055T IXTA 180N055T IXTP 180N055T Trench Gate Power MOSFET VDSS ID25 = 55 V = 180 A Ω = 4.0 mΩ RDS on N-Channel Enhancement Mode TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	180N055T O-220 180N055T	PDF
Untitled Abstract: No abstract text available Text: Polar VHVTM Power MOSFET IXTA08N100P IXTP08N100P IXTY08N100P VDSS ID25 RDS on = 1000V = 0.8A ≤ Ω 20Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ	Original	IXTA08N100P IXTP08N100P IXTY08N100P O-263 08N100P	PDF
Untitled Abstract: No abstract text available Text: Preliminary Technical Information Polar VHVTM Power MOSFET IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P VDSS ID25 RDS on = 1000V = 1.4A ≤ Ω 11Ω N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P O-263 1R4N100P	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET IXTA 12N50P IXTP 12N50P VDSS ID25 = 500 = 12 ≤ 0.5 RDS on V A Ω N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGSM ID25	Original	12N50P 12N50P O-263 O-220	PDF
IXTA90N055T2 Abstract: *9956b IXTY90N055T2 IXTY90N055T Text: TrenchT2TM Power MOSFETs IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 55V = 90A Ω ≤ 8.4mΩ TO-252 (IXTY) G S D (Tab) TO-263 AA (IXTA) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	IXTY90N055T2 IXTA90N055T2 IXTP90N055T2 O-252 O-263 062in. O-220) O-252 O-220 *9956b IXTY90N055T	PDF
9N60 Abstract: MOSFET IXYS TO-263 Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 9N60P IXTP 9N60P VDSS ID25 RDS on = 600 V = 9 A Ω = 540 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ VGSM	Original	9N60P 9N60P O-220 O-263 405B2 9N60 MOSFET IXYS TO-263	PDF
IXTP4N50A Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100 Text: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T \|~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80	OCR Scan	IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP4N50A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460	PDF

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IXTP Datasheets (308)

IXTP Datasheets Context Search

IXTP220N04T2

3N120

1n80

01N100D

8N50P

siemens i

1N100

01N100D

5n60p

IXTQ48N20T

IXTY1R6N50D2

IXTP450P2

32P05T

36p15

52P10p

3n120

2n60p

180N055T

Untitled

Untitled

Untitled

IXTA90N055T2

9N60

IXTP4N50A