Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1N80 Search Results

    SF Impression Pixel

    1N80 Price and Stock

    Vishay Siliconix SIHB11N80E-GE3

    MOSFET N-CH 800V 12A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHB11N80E-GE3 Tube 4,800 1
    • 1 $4
    • 10 $2.774
    • 100 $4
    • 1000 $1.7125
    • 10000 $1.7125
    		Buy Now

    Infineon Technologies AG SPP11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPP11N80C3XKSA1 Tube 4,121 1
    • 1 $3.19
    • 10 $3.19
    • 100 $3.19
    • 1000 $1.32975
    • 10000 $1.32975
    		Buy Now
    Newark SPP11N80C3XKSA1 Bulk 201 1
    • 1 $2.96
    • 10 $2.49
    • 100 $2.01
    • 1000 $1.53
    • 10000 $1.38
    		Buy Now
    Bristol Electronics SPP11N80C3XKSA1 150
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Rochester Electronics SPP11N80C3XKSA1 187 1
    • 1 $1.55
    • 10 $1.55
    • 100 $1.46
    • 1000 $1.32
    • 10000 $1.32
    		Buy Now
    Chip1Stop SPP11N80C3XKSA1 Tube 1,000
    • 1 $1.36
    • 10 $1.36
    • 100 $1.36
    • 1000 $1.36
    • 10000 $1.36
    		Buy Now
    SPP11N80C3XKSA1 841
    • 1 $2.101
    • 10 $1.893
    • 100 $1.512
    • 1000 $1.298
    • 10000 $1.298
    		Buy Now
    SPP11N80C3XKSA1 50
    • 1 $2.37
    • 10 $2.37
    • 100 $2.37
    • 1000 $2.37
    • 10000 $2.37
    		Buy Now
    EBV Elektronik SPP11N80C3XKSA1 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Win Source Electronics SPP11N80C3XKSA1 7,420
    • 1 -
    • 10 $5.821
    • 100 $3.881
    • 1000 $3.881
    • 10000 $3.881
    		Buy Now

    Vishay Siliconix SIHD11N80AE-T4-GE3

    N-CHANNEL 800V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD11N80AE-T4-GE3 Reel 3,000 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.725
    		Buy Now

    Vishay Siliconix SIHD11N80AE-GE3

    MOSFET N-CH 800V 8A TO252AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHD11N80AE-GE3 Tube 2,846 1
    • 1 $2.06
    • 10 $2.06
    • 100 $1.03853
    • 1000 $0.81503
    • 10000 $0.725
    		Buy Now

    Infineon Technologies AG SPA11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-FP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPA11N80C3XKSA1 Tube 2,433 1
    • 1 $3.21
    • 10 $3.21
    • 100 $3.21
    • 1000 $1.34075
    • 10000 $1.34075
    		Buy Now
    Avnet Americas SPA11N80C3XKSA1 Bulk 16 Weeks, 3 Days 1
    • 1 $2.98
    • 10 $2.69
    • 100 $1.87
    • 1000 $1.87
    • 10000 $1.87
    		Buy Now
    Newark SPA11N80C3XKSA1 Bulk 763 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.18
    • 1000 $1.18
    • 10000 $1.18
    		Buy Now
    Chip1Stop SPA11N80C3XKSA1 1,200
    • 1 $3.52
    • 10 $2.43
    • 100 $1.47
    • 1000 $1.31
    • 10000 $1.31
    		Buy Now
    EBV Elektronik SPA11N80C3XKSA1 16 Weeks 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Win Source Electronics SPA11N80C3XKSA1 12,400
    • 1 -
    • 10 -
    • 100 $1.91
    • 1000 $1.602
    • 10000 $1.602
    		Buy Now
    Find more 1N80 price and stock on Findchips.com

    1N80 Datasheets (58)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N800 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N800 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N800 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N800 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N801 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N801 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N801 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N801 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N801 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N802 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N802 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N802 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N802 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N8024-GA GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 0.75A TO257 Original PDF
    1N8026-GA GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 2.5A TO257 Original PDF
    1N8028-GA GeneSiC Semiconductor Diodes, Rectifiers - Single, Discrete Semiconductor Products, DIODE SCHOTTKY 1.2KV 9.4A TO257 Original PDF
    1N803 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N803 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N803 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    1N803 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF

    1N80 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1n80

    Abstract: No abstract text available
    Text: High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF O-263 O-252 728B1 1n80

    1n8021

    Abstract: No abstract text available
    Text: 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 100 – 200 VOLTS 5 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet


    Original     		PDF 1N8021 1N8023 1N6638, 1N6642 1N5806 SHF1101, SHF1151, SHF1201 1N8022

    Untitled

    Abstract: No abstract text available
    Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250°C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8024-GA Mil-PRF-19500 1N8024 88E-18 90E-11 00E-10 00E-03

    1n80

    Abstract: 98822
    Text: Advanced Technical Information High Voltage MOSFET IXTA 1N80 IXTP 1N80 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Energy Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20


    Original     		PDF O-220AB O-263 1n80 98822

    Untitled

    Abstract: No abstract text available
    Text: REVERSE RECOVERY IN 5 nsec FLAT 1N8021 - 1N8023 SERIES 1 Amp ▪ 100 - 200 Volts ▪ 5 nsec ▪ Hyper Fast Recovery Rectifier Solid State Devices, Inc. SSDI announces the fastest, most rugged rectifier diodes on the market, the 1N8021 - 1N8023 Series. These diodes are more reliable than the


    Original     		PDF 1N8021 1N8023 1N8021 1N6642 1N5806. RC0160C

    1N80

    Abstract: No abstract text available
    Text: High Voltage MOSFET IXTA 1N80 IXTP 1N80 VDSS ID25 N-Channel Enhancement Mode Avalanche Energy Rated RDS on = 800 V = 750 mA = 11 Ω Preliminary Data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		PDF O-220AB O-263 728B1 1N80

    Untitled

    Abstract: No abstract text available
    Text: 1N8030-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8030-GA Mil-PRF-19500 1N8030 57E-18 40E-05 12E-11 00E-10

    1N80

    Abstract: utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power
    Text: UNISONIC TECHNOLOGIES CO., LTD 1N80 Power MOSFET 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology. This technology specializes in allowing a minimum


    Original     		PDF O-220 O-220F O-220F1 O-252 QW-R502-491 1N80 utc 3n80l 3N80 mosfet 10a 800v mosfet 10a 800v high power

    1N8022

    Abstract: 1N802 1n8021
    Text: 1N8021 thru 1N8023 SERIES Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 1 AMP 100 – 200 VOLTS 5 nsec HYPER FAST RECOVERY RECTIFIER Designer’s Data Sheet


    Original     		PDF 1N8021 1N8023 MIL-PRF-19500/770itance 1N8022 1N8023 RC0160C 1N802

    Untitled

    Abstract: No abstract text available
    Text: 1N8032-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8032-GA Mil-PRF-19500 1N8032 99E-17 87E-05 38E-10 00E-10 00E-03

    1N8024-GA SPICE

    Abstract: No abstract text available
    Text: 1N8024-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8024-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8024-GA 1N8024-GA. 05-SEP-2013 1N8024-GA 1N8024 TEMP-24) 88E-18 1N8024-GA SPICE

    1N8031-GA SPICE

    Abstract: PIN diode SPICE model
    Text: 1N8031-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8031-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8031-GA 1N8031-GA. 05-SEP-2013 1N8031-GA 1N8031 57E-18 1N8031-GA SPICE PIN diode SPICE model

    Untitled

    Abstract: No abstract text available
    Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8034-GA Mil-PRF-19500 1N8034 46E-17 00E-05 26E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8034-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8034-GA Mil-PRF-19500 1N8034 46E-17 00E-05 26E-09 00E-10

    Untitled

    Abstract: No abstract text available
    Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8024-GA Mil-PRF-19500 TEMP-24) 1N8024 88E-18 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8018 - 1N8020 Series 1N8020 Axial Leaded 1N8020SMS Surface Mount Square Tab A Novel 1 amp Void Free Glass Ceramic Nanosize Package 9 nsec Hyper Fast Soft Recovery Nanospeed Rectifier SSDI announces our 9 nsec hyper fast rectifiers, the 1N8018 -1N8020 series. The 1N8020 is a void free glass ceramic encapsulated rectifier that


    Original     		PDF 1N8018 1N8020 1N8020 1N8020SMS -1N8020 1N6642 1N5806. DO-35

    Untitled

    Abstract: No abstract text available
    Text: 1N8024-GA High Temperature Silicon Carbide Power Schottky Diode VRRM VF IF QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8024-GA Mil-PRF-19500 TEMP-24) 1N8024 88E-18 90E-11 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8035-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8035-GA Mil-PRF-19500 1N8035 46E-17 00E-05 26E-09 00E-10 00E-03

    1N8026-GA SPICE

    Abstract: No abstract text available
    Text: 1N8026-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8026-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8026-GA 1N8026-GA. 05-SEP-2013 1N8026-GA 1N8026 TEMP-24) 45E-15 1N8026-GA SPICE

    Untitled

    Abstract: No abstract text available
    Text: 1N8028-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •          RoHS Compliant 1200 V Schottky rectifier 250 °C maximum operating temperature Electrically isolated base-plate Zero reverse recovery charge


    Original     		PDF 1N8028-GA Mil-PRF-19500 1N8028 74E-13 68E-5 15E-09 00E-10 00E-03

    Untitled

    Abstract: No abstract text available
    Text: 1N8033-GA High Temperature Silicon Carbide Power Schottky Diode VRRM IF Tc=25°C QC Features Package •         RoHS Compliant 650 V Schottky rectifier 250 °C maximum operating temperature Zero reverse recovery charge Superior surge current capability


    Original     		PDF 1N8033-GA Mil-PRF-19500 1N8033 99E-17 87E-05 38E-10 00E-10 00E-03

    1N8028-GA SPICE

    Abstract: No abstract text available
    Text: 1N8028-GA SPICE Model Parameters Copy this code from the SPICE model into a SPICE software program for simulation of the 1N8028-GA. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 1.0 $ * $Date: 05-SEP-2013 $ * * GeneSiC Semiconductor Inc. * 43670 Trade Center Place Ste. 155


    Original     		PDF 1N8028-GA 1N8028-GA. 05-SEP-2013 1N8028-GA 1N8028 74E-13 1N8028-GA SPICE

    1N3070

    Abstract: FD444 1N809 1n841 1n845 1N837
    Text: DIODES HIGH VOLTAGE SWITCHING DIODES BY DESCENDING BV GLASS PACKAGE •r Bv VOLTS nA @ MIN MAX 1N843 250 1N809 c VF PF *RR ns MAX MAX VO LTS @ VR VO LTS MAX «F mA 100 @ 200 1.0 150 300 DO-7 220 1000 @ 200 1.0 @ 100 300 DO-7 FD400 200 100 @ 150 1.0 @ 400


    OCR Scan     		PDF 1N843 1N809 FD400 FDH400 FDN400 1N629 1N643 1N643A 1N804 1N3070 FD444 1n841 1n845 1N837