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    IXTA220N04T2 Price and Stock

    Littelfuse Inc IXTA220N04T2

    MOSFET N-CH 40V 220A TO-263
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    DigiKey IXTA220N04T2 Tube 300
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    Newark IXTA220N04T2 Bulk 300
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    • 1000 $2.18
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    Littelfuse Inc IXTA220N04T2-7

    MOSFET N-CH 40V 220A TO263-7
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    DigiKey IXTA220N04T2-7 Tube 300
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    Newark IXTA220N04T2-7 Bulk 300
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    Littelfuse Inc IXTA220N04T2-TRL

    MOSFET N-CH 40V 220A TO263
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    DigiKey IXTA220N04T2-TRL Reel 800
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    Newark IXTA220N04T2-TRL Reel 800
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    IXYS Corporation IXTA220N04T2

    MOSFETs 220 Amps 40V 0.0035 Rds
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    Mouser Electronics IXTA220N04T2
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    Future Electronics IXTA220N04T2 Tube 300
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    TTI IXTA220N04T2 Tube 300
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    TME IXTA220N04T2 1
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    New Advantage Corporation IXTA220N04T2 735 1
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    IXYS Corporation IXTA220N04T2-TRL

    MOSFETs IXTA220N04T2 TRL
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    Mouser Electronics IXTA220N04T2-TRL
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    TTI IXTA220N04T2-TRL Reel 800
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    IXTA220N04T2 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTA220N04T2 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 220A TO-263 Original PDF
    IXTA220N04T2-7 IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 220A TO-263-7 Original PDF

    IXTA220N04T2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTP220N04T2

    Abstract: IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


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    IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 04-24-08-C IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 220N04 ixtp220 220A-75 PDF

    IXTP220N04T2

    Abstract: IXTP 220N04T2 220N04T2 IXTA220N04T2 MOSFET IXYS TO-220 *9918c ixta220n04 220N04 DS99918C
    Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient


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    IXTA220N04T2 IXTP220N04T2 O-263 O-220 062in. 220N04T2 12-15-08-D IXTP220N04T2 IXTP 220N04T2 IXTA220N04T2 MOSFET IXYS TO-220 *9918c ixta220n04 220N04 DS99918C PDF

    220N04T2

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V


    Original
    IXTA220N04T2-7 O-263 062in. 220N04T2 4-24-08-C PDF

    220N04

    Abstract: No abstract text available
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2-7 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V


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    IXTA220N04T2-7 O-263 062conds 220N04T2 4-24-08-C 220N04 PDF

    DS99918C

    Abstract: IXTP 220N04T2 220N04T2 IXTP220N04T2
    Text: TrenchT2TM Power MOSFET VDSS ID25 IXTA220N04T2 IXTP220N04T2 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 G Symbol Test Conditions VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40 V VGSM Transient


    Original
    IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 12-15-08-D DS99918C IXTP 220N04T2 IXTP220N04T2 PDF

    220N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V


    Original
    IXTA220N04T2-7 O-263 220N04T2 3-06-08-A 4-24-08-C PDF

    IXTP220N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench Gate Power MOSFET IXTA220N04T2 IXTP220N04T2 VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 40V = 220A Ω ≤ 3.5mΩ TO-263 (IXTA) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original
    IXTA220N04T2 IXTP220N04T2 O-263 O-220 220N04T2 3-06-08-A IXTP220N04T2 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T27 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V


    Original
    IXTA220N04T27 O-263 220N04T2 3-06-08-A PDF

    220N04

    Abstract: No abstract text available
    Text: Preliminary Technical Information Trench T2TM Power MOSFET IXTA220N04T2-7 VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) (IXTA.7) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40


    Original
    IXTA220N04T2-7 O-263 062in. 220N04T2 3-06-08-A 220N04 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTA220N04T2-7 TrenchT2TM Power MOSFET VDSS ID25 = 40V = 220A Ω ≤ 3.5mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (7-lead) 1 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 40


    Original
    IXTA220N04T2-7 O-263 062in. 220N04T2 5-12-10-E PDF

    IXTP220N04T2

    Abstract: No abstract text available
    Text: IXTA220N04T2 IXTP220N04T2 TrenchT2TM Power MOSFET VDSS ID25 RDS on = 40V = 220A Ω ≤ 3.5mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 AA (IXTA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 40 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original
    IXTA220N04T2 IXTP220N04T2 O-263 O-220AB 220N04T2 5-12-10-E IXTP220N04T2 PDF

    IXTP220N04T2

    Abstract: IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2
    Text: IXYS POWER Efficiency through Technology N E W P R O D U C T B RI E F 40V – 75V TrenchT2TM MOSFETs Next Generation Trench Power MOSFETs MAY 2008 OVERVIEW IXYS’ next generation TrenchT2TM Power MOSFETs are designed and optimized to meet the thermal and electrical performance of today’s energy and power management


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    O-220 IXTP220N04T2 IRF2204 IXTA200N055T2 IXYS Class D Switching Amplifiers IXTA100N04T2 IXTA120N04T2 IXTA220N04T2 IXTA90N055T2 IXTP100N04T2 IXTP120N04T2 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    IXAN0068

    Abstract: IXTP220N04T2 IXTP110N055T2 IXTP90n055 IXTA200N055T2 IXTA220N04T2 IXTA70N075T2 IXTA90N055T2 IXTP200N055T2 IXTP70N075T2
    Text: DC to DC Synchronous Converter Design Abdus Sattar, IXYS Corporation IXAN0068 Modern power electronics products require small size and lighter weight of power electronics parts. Filter inductor and capacitor sizes must be small. With the small filter, the switching semiconductor devices must have small switching loss. And heat sink also


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    IXAN0068 210uF 200mV AN-6005, ISL6594D IXAN0068 IXTP220N04T2 IXTP110N055T2 IXTP90n055 IXTA200N055T2 IXTA220N04T2 IXTA70N075T2 IXTA90N055T2 IXTP200N055T2 IXTP70N075T2 PDF