Contextual Info: PIX Y S 1 vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V □ ^D25 DS on 58 A 85 mQ 61 A 75 m ß N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings v* DSS T0 = 25°Cto150°C 500 V v DCR Tj = 25°C to 150°C; RGS= 1.0 MQ

TEST20

Contextual Info: □ IXYS vDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 500 V 500 V p ^D25 DS on 58 A 85 m fì 61 A 75 m fì N-Channel Enhancement Mode Preliminary Data os Symbol TestC onditions v DSS Tj = 2 5 °C to 150°C vDGR T, = 25°C to 150°C; £ s= 1.0 M il

61N50

Contextual Info: VDSS High Current Power MOSFET IXTN 58N50 IXTN 61N50 ID25 RDS on 58 A 85 mΩ Ω Ω 61 A 75 mΩ 500 V 500 V N-Channel Enhancement Mode Preliminary Data Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1.0 MΩ

pixy

Contextual Info: PiXYS a«i»«iawawiWBt»i High Current Power MOSFET . - V DSS IXTN 58N50 IXTN 61N50 500 V 500 V lg! F js n g g ìg R ^D25 DS on 58 A 85 mQ 61 A 75 m il N-Channel Enhancement Mode Symbol Test Conditions Voss v D0B Tj = 25°C to 150°C 500 V Tj = 25°C to 150°C; Rss= 1.0 M£2

ixys ixtn 79n20

Abstract: 79N20 IXTN79N20 ixtn 79n20
Contextual Info: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient

ixys ixtn 79n20

Abstract: IXTN max4458 IXTN79N20
Contextual Info: nixYS MegaMOS FET IXTN 79N20 VDSS = 200 V U = 85 A ^D S on = ^ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =25°C to150°C 200 V v ™ ^ 200 V = 25° C to 150° C i R ^ I O k i l miniBLOC, SOT-227 B 53432 Vos vGSM Continuous

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

Contextual Info: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR

IRFP 260 M

Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH

ixtn 44N50

Abstract: IXTN44N50L
Contextual Info: Advance Technical Data Power MOSFETs with Extended FBSOA IXTK 44N50L IXTN 44N50L VDSS ID25 RDS on = 500 = 44 = 0.15 V A Ω N-Channel Enhancement Mode Avalanche Rated TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS TJ = 25°C to 150°C

46N50L

Abstract: IXTN
Contextual Info: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous

62N50L

Abstract: IXTN62N50L
Contextual Info: Power MOSFETs with Extended FBSOA IXTB 62N50L IXTN 62N50L VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated = 500 = 62 ≤ 0.1 V A Ω Preliminary Data Sheet PLUS 264TM (IXTB) Symbol Test Conditions Maximum Ratings IXTB IXTN VDSS TJ = 25oC to 150oC

IRFP 640

Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Contextual Info: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140

MOSFET 11N80 Data sheet

Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250

diode T88

Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Contextual Info: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30

IXTN79N20

Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Contextual Info: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM

EIAJ ED-4701/101

Abstract: function17 tray drawing ic measurement CF5074B DSF060310 HP4194A HP8901B HP85046
Contextual Info: CF5074B-1 Component Specifications VC America Inc. Authorizing Signature Reference No ：CSF060310-010 Issuing Date ：20-Nov-2006 N. Sekiya （ⅰ／ ） The change record CF5074B-1 Product name Component Specifications First edition number CSF060310-010

CF5076

Abstract: WF5076
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

5076

Abstract: VCXO
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

Contextual Info: 5410 series VCXO Module ICs with Built-in Varicap OVERVIEW The 5410 series are VCXO module ICs supported 20MHz to 62MHz fundamental oscillation. They employ a recently developed varicap diode fabrication process at fixation communication usage that provides a low phase noise characteristic and a wide frequency pulling

CF5076

Abstract: WF5076
Contextual Info: 5076 series VCXO Module IC with Built-in Varicap OVERVIEW The 5076 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

WF5075

Abstract: 27mhz rf amplifier
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any

5075

Abstract: VCXO
Contextual Info: 5075 series VCXO Module IC with Built-in Varicap OVERVIEW The 5075 series are miniature VCXO ICs that provide a wide frequency pulling range, even when using miniature crystal units for which a wide pulling range is difficult to provide. They employ a recently developed varicap diode fabrication process that provides a wide frequency pulling range and good linearity without any