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    IXTN Price and Stock

    Littelfuse Inc IXTN90N25L2

    MOSFET N-CH 250V 90A SOT227B
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    DigiKey IXTN90N25L2 Tube 870 1
    • 1 $44.37
    • 10 $34.803
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    Newark IXTN90N25L2 Bulk 300 1
    • 1 $42.84
    • 10 $35.11
    • 100 $35.11
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    Littelfuse Inc IXTN60N50L2

    MOSFET N-CH 500V 53A SOT227B
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    DigiKey IXTN60N50L2 Tube 857 1
    • 1 $49.02
    • 10 $37.023
    • 100 $49.02
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    Littelfuse Inc IXTN30N100L

    MOSFET N-CH 1000V 30A SOT227B
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    DigiKey IXTN30N100L Tube 593 1
    • 1 $64.82
    • 10 $54.754
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    Newark IXTN30N100L Bulk 300
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    • 100 $57.39
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    Littelfuse Inc IXTN600N04T2

    MOSFET N-CH 40V 600A SOT227B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN600N04T2 Tube 401 1
    • 1 $35.49
    • 10 $26.297
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    Newark IXTN600N04T2 Bulk 300
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    • 100 $22.85
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    Littelfuse Inc IXTN102N65X2

    MOSFET N-CH 650V 76A SOT227
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTN102N65X2 Tube 327 1
    • 1 $30.6
    • 10 $23.304
    • 100 $30.6
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    IXTN Datasheets (37)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTN102N65X2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 76A X2 SOT-227 Original PDF
    IXTN110N20L2 IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 200V 100A SOT-227 Original PDF
    IXTN120P20T IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 200V 106A SOT-227 Original PDF
    IXTN15N100 IXYS N-Channel Enhancement-Mode MegaMOS FET Scan PDF
    IXTN15N100 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTN170P10P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 100V 170A SOT227 Original PDF
    IXTN17N120L IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1200V 15A SOT-227B Original PDF
    IXTN200N10L2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 178A SOT-227 Original PDF
    IXTN200N10T IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 100V 200A SOT-227 Original PDF
    IXTN210P10T IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 210A SOT-227 Original PDF
    IXTN21N100 IXYS 600V high voltage megaMOS FET Original PDF
    IXTN22N100L IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET N-CH 1000V 22A SOT-227 Original PDF
    IXTN240N075L2 IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH Original PDF
    IXTN30N100L IXYS Power MOSFETs with Extended FBSOA Original PDF
    IXTN320N10T IXYS Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 100V 320A SOT-227B Original PDF
    IXTN32P60P IXYS FETs - Modules, Discrete Semiconductor Products, MOSFET P-CH 600V 32A SOT227 Original PDF
    IXTN36N45 IXYS Power MOSFET Scan PDF
    IXTN36N45 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTN36N50 IXYS Power MOSFET Scan PDF
    IXTN36N50 IXYS N-Channel Enhancement Mode Scan PDF

    IXTN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: Advance Technical Information Linear Power MOSFET With Extended FBSOA IXTN17N120L VDSS ID25 D N-Channel Enhancement Mode Avalanche Rated = 1200V = 17A Ω ≤ 990mΩ RDS on G S S miniBLOC, SOT-227 B (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C


    Original     		IXTN17N120L OT-227 E153432 17N120L IXTN17N120L PDF

    IXTN8N150L

    Abstract: No abstract text available
    Text: Preliminary Technical Information Linear Power MOSFET w/Extended FBSOA VDSS ID25 IXTN8N150L D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω RDS on G S S miniBLOC, SOT-227 B E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTN8N150L OT-227 E153432 8N15L 100ms IXTN8N150L PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFETs VDSS ID25 IXTN120P20T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN120P20T 300ns E153432 150nds 120P20T PDF

    IXTN17N120L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN17N120L VDSS ID25 RDS on D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ G S S miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


    Original     		IXTN17N120L E153432 100ms 17N120L 02-18-09-B IXTN17N120L PDF

    ixtn8n150l

    Abstract: 013009 ixtn8n
    Text: Preliminary Technical Information IXTN8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 RDS on D N-Channel Enhancement Mode Guaranteed FBSOA = 1500V = 7.5A Ω = 3.6Ω G S S miniBLOC, SOT-227 B E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C


    Original     		IXTN8N150L OT-227 E153432 8N15L 100ms ixtn8n150l 013009 ixtn8n PDF

    IXtN200N10

    Abstract: IXTN200N10T 200N10T
    Text: Preliminary Technical Information IXTN200N10T TrenchMVTM Power MOSFET VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 B E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C 100 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ


    Original     		IXTN200N10T OT-227 E153432 200N10T 9-30-08-D IXtN200N10 IXTN200N10T PDF

    IXTN46N50L

    Abstract: 1614G
    Text: Preliminary Technical Information Linear Power MOSFET IXTN46N50L With Extended FBSOA VDSS ID25 D = 500 = 46 ≤ 0.16 RDS on N-Channel Enhancement Mode V A Ω G S S Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original     		IXTN46N50L OT-227 E153432 46N50L 5-07-A IXTN46N50L 1614G PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXTN120P20T TrenchPTM Power MOSFET VDSS ID25 RDS on trr D P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ - 200V - 106A Ω 30mΩ 300ns G miniBLOC E153432 S S S G Symbol Test Conditions VDSS


    Original     		IXTN120P20T 300ns E153432 120P20T PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET VDSS ID25 IXTN170P10P RDS on = = ≤ -100V -170A Ω 12mΩ P-Channel Enhancement Mode Avalanche Rated miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTN170P10P -100V -170A OT-227 E153432 100ms 170P10P 3-25-09-C PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTN170P10P PolarPTM Power MOSFET VDSS ID25 RDS on D P-Channel Enhancement Mode Avalanche Rated = = ≤ -100V -170A Ω 12mΩ G S S miniBLOC, SOT-227 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -100 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTN170P10P -100V -170A OT-227 E153432 100ms 170P10P 3-25-09-C PDF

    46N50L

    Abstract: IXTN
    Text: Power MOSFETs with Extended FBSOA IXTN 46N50L N-Channel Enhancement Mode Avalanche Rated VDSS ID25 = 500 = 46 RDS on = 0.16 V A Ω Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25oC to 150oC 500 V VDGR TJ = 25oC to 150oC; RGS = 1 MΩ 500 V VGS Continuous


    Original     		46N50L 150oC 150oC; OT-227 E153432 Sourc40 46N50L IXTN PDF

    IXTN40P50P

    Abstract: No abstract text available
    Text: PolarPTM Power MOSFET IXTN40P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 40A Ω 230mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTN40P50P OT-227 E153432 100ms 40P50P 3-06-08-A IXTN40P50P PDF

    ixys ixtn 79n20

    Abstract: 79N20 IXTN79N20 ixtn 79n20
    Text: MegaMOSTMFET IXTN 79N20 VDSS = 200 V = 85 A Ω = 25 mΩ ID25 RDS on N-Channel Enhancement Mode KS Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 200 V VDGR T J = 25°C to 150°C; RGS = 10 kΩ 200 V VGS Continuous ±20 V VGSM Transient


    Original     		79N20 OT-227 79N20 ixys ixtn 79n20 IXTN79N20 ixtn 79n20 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information PolarPTM Power MOSFET IXTN32P60P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 600V - 32A Ω 350mΩ miniBLOC, SOT-227 (IXTN) E153432 Symbol Test Conditions VDSS TJ = 25°C to 150°C Maximum Ratings


    Original     		IXTN32P60P OT-227 E153432 2500ias 100ms 32P60P PDF

    Untitled

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN17N120L D N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA = 1200V = 15A Ω < 900mΩ RDS on G S S miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V


    Original     		IXTN17N120L E153432 100ms 17N120L 02-18-09-B PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information TrenchPTM Power MOSFET VDSS ID25 IXTN210P10T RDS on trr P-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = = ≤ ≤ -100V - 210A Ω 7.5mΩ 200ns miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings


    Original     		IXTN210P10T -100V 200ns E153432 -100A 210P10T PDF

    IXTN600N04T2

    Abstract: No abstract text available
    Text: Preliminary Technical Information TrenchT2TM GigaMOSTM Power MOSFET VDSS ID25 IXTN600N04T2 = = 40V 600A Ω 1.05mΩ RDS on ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode miniBLOC, SOT-227 E153432 S Symbol Test Conditions Maximum Ratings


    Original     		IXTN600N04T2 OT-227 E153432 600N04T2 IXTN600N04T2 PDF

    IXTN30N100L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTN30N100L VDSS ID25 = = ≤ RDS on N-Channel Enhancement Mode Avalanche Rated 1000V 30A Ω 450mΩ miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ


    Original     		IXTN30N100L E153432 30N100L 5-07-A IXTN30N100L PDF

    1xys

    Abstract: IXTN36N50 36N50 E72873 IXTN36N45
    Text: • 4bûbE2b 0001Û11 TTñ ■ I X Y □IXYS Pow er M O S F E T IX TN 36N 45 IX TN 36N 50 N-Channel Enhancement Mode Symbol Test Conditions V oss T j = 25°C to 150°C Maximum Ratings IXTN36N45 IXTN36N50 450 500 V V V oc* ^ = 25°C to 150°C ;R es=10kQ 500


    OCR Scan     		IXTN36N45 IXTN36N50 IXTN36N45 Cto150Â IXTN36N D-68619; 1xys IXTN36N50 36N50 E72873 PDF

    21N100

    Abstract: 21N10 ixtw DIXYS IXTN21N100
    Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ


    OCR Scan     		21N100 O-264 Cto150 OT-227 21N100 21N10 ixtw DIXYS IXTN21N100 PDF

    1SN10

    Abstract: No abstract text available
    Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs


    OCR Scan     		IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10 PDF

    diode c248

    Abstract: IXTN36N50 C248 diode
    Text: D IX Y S IXTN36N50 MegaMOS FET V DSS = 5 0 0 V *D25 = 3 6 A ^D S o n = 0 .1 2 Q N-Channel Enhancement Mode Symbol Test Conditions v OSS ^ Maximum Ratings miniBLOC, SOT-227 B T O E153432 500 V Tj = 25°C to 150°C; RQS= 10 k£2 500 V v GS VGSM Continuous


    OCR Scan     		IXTN36N50 OT-227 E153432 C2-50 C2-51 diode c248 C248 diode PDF

    DIODE B44 sot

    Abstract: IXTK21 B44 diode IXTN21N100
    Text: IXTK21 N100 IXTN21N100 High Voltage MegaMOS FETs DSS D25 RDS on = 1000 V = 21 A = 0.55 Q N-Channel, Enhancement Mode TO-264 AA (IXTK) Maximum Ratings IXTN IXTK Symbol Test Conditions VDSS T, = 25°C to 150°C Tj = 25°C to 150°C; Ras = 1 MO V«, Vas V


    OCR Scan     		IXTK21 IXTN21N100 O-264 21N100 21N100 DIODE B44 sot B44 diode IXTN21N100 PDF

    ixys ixtn 36n50

    Abstract: 36N50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50
    Text: IXYS_ MegaMOS FET IXTN 36N50 VDSS = 500 V U = 36A DS on — 12 Q N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings v DSS T j =2 5°C to 150°C 500 V V 0GR T j = 2 5 °C to 150°C; RGS= 10ki2 500 V Vos Continuous 120 V v GSM


    OCR Scan     		36N50 10ki2 OT-227 E153432 C2-46 36N50 ixys ixtn 36n50 IXTN 36N50 C IXYS 36N50 ac motor forward reverse control ixtn36n50 IXTN 36N50 PDF