Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30A VCES IC25 VCE sat tfi = 300 V = 60 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
IXGH40N30A
O-247
Gat21
|
PDF
|
IXGH40N30A
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGH40N30A VCES IC25 VCE sat tfi = 300 V = 60 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 300 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 300 V VGES Continuous ±20 V VGEM Transient ±30
|
Original
|
IXGH40N30A
IXGH40N30A
|
PDF
|
IXGD32N60B-5X
Abstract: ixgh45n120 IXGH24N60B IXGH50N60B IXGH32N60B
Text: Insulated Gate Bipolar Transistors IGBT-Chips Type VCES VCE sat @ IC Cies typ. tfi typ. ns Chip type Chip size dimensions High Speed Low VCE(sat) TJM = 150°C mm Source bond wire recommend Equivalent device data sheet Dim. outline No. V V A pF mils IXGD28N30-43
|
Original
|
IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-3X
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7Y
IXGD200N60B-9X
IXGD2N100-1M
IXGD4N100-1T
IXGD8N100-2L
IXGD32N60B-5X
ixgh45n120
IXGH24N60B
IXGH50N60B
IXGH32N60B
|
PDF
|
IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
|
Original
|
|
PDF
|
ixgh40n30
Abstract: No abstract text available
Text: □ IXYS VCES HiPerFAST IGBT IXGH40N30/S IXGH40N30A/S IXGH40N30B/S ^C25 600 V 60 A 600 V 60 A 600 V 60 A V CE sat 1.8 V 2.1 V 2.4 V t. 220ns 120ns 75 ns Preliminary data TO-247 SMD* Maximum Ratings Symbol Test Conditions V CES Td = 25°C to 150°C 300
|
OCR Scan
|
IXGH40N30/S
IXGH40N30A/S
IXGH40N30B/S
220ns
120ns
O-247
ixgh40n30
|
PDF
|
Untitled
Abstract: No abstract text available
Text: OIXYS VCES HiPerFAST IGBT ^C25 IXGH40N30/S 600 V 60 A IXGH40N30A/S 600 V 60 A IXGH40N30B/S 600 V 60 A VCE sat 1.8 V 2.1 V 2.4 V tfi 220ns 120ns 75 ns Preliminary data TO-247 SMD* TestConditions V«s ^ = 25°C to 150°C v COR TJ = v ots Maximum Ratings
|
OCR Scan
|
IXGH40N30/S
IXGH40N30A/S
IXGH40N30B/S
220ns
120ns
O-247
O-24775
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATASHEET HiPerFAST IGBT IXGH40N30A IXGH40N30AS V C ES ^C25 V C E sat t. = 300 V = 60 A = 2.1 V = 120 ns TO -247 SMD (40N 30A S ) T, = 25°C to 150°C; RGE = 1 MO 300 Continuous ±20 Transient ±30 T c = 25 °C 60 T c = 90 °C 40 I, T SSOA
|
OCR Scan
|
IXGH40N30A
IXGH40N30AS
|
PDF
|
IXGD40N60A
Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60
Text: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60
|
OCR Scan
|
IXGD28N30
IXGD40N30
IXGD10N60
IXGD20N60
IXGD31N60
IXGD30N60
IXGD38N60
IXGD40N60
IXGD60N60
IXGD200N60
IXGD40N60A
1XGH10N60
xgh10n60a
IXGH40N60
IXGH50N60A
1X57
IXGH60N60
|
PDF
|
IXGH24N50B
Abstract: IXGH50N60B IXGH32N60B IXGH50N60A ixgh24n60a equivalent IXGH24N60A IXGH17N100
Text: nixYS Insulated Gate Bipolar Transistors IGBT-Chips v Type •• c «V- Chip typ - tn » Chip s o b dbnemtons Source bm d wire »C Tj„ = l&O'C TO Equivalent device datasheet Dim. out line V V A pF IXGD28N30-43 IXGD40N30-5X 300 2.1 1.5 20 20 1500 2500
|
OCR Scan
|
IXGD28N30-43
IXGD40N30-5X
IXGD12N60B-33
IXGD31N60-4X
IXGD41N60-5X
IXGD60N60-7X
IXGD200N60-9X
IXGD8N100-2L
IXGD12N100-33
IXGD17N100-4T
IXGH24N50B
IXGH50N60B
IXGH32N60B
IXGH50N60A
ixgh24n60a equivalent
IXGH24N60A
IXGH17N100
|
PDF
|
