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    IXGH24N60 Search Results

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    IXGH24N60 Price and Stock

    IXYS Corporation IXGH24N60C

    IGBT 600V 48A 150W TO247AD
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    IXYS Corporation IXGH24N60B

    IGBT 600V 48A 150W TO247AD
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    IXYS Corporation IXGH24N60A

    IGBT 600V 48A 150W TO247AD
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    IXYS Corporation IXGH24N60C4

    IGBT 600V 56A 190W TO247
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    IXYS Corporation IXGH24N60AU1

    IGBT 600V 48A 150W TO247AD
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    IXGH24N60 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXGH24N60A IXYS Hiperfast IGBT Original PDF
    IXGH24N60AU1 IXYS Hiperfast IGBT With Diode Original PDF
    IXGH24N60AU1S IXYS HiPerFAST IGBT with Diode Original PDF
    IXGH24N60B IXYS 500V HiPerFAST IGBT Original PDF
    IXGH 24N60BU1 IXYS TRANS IGBT CHIP N-CH 600V 48A 3TO-247 AD Original PDF
    IXGH24N60BU1 IXYS Hiperfast IGBT With Diode Original PDF
    IXGH24N60C IXYS HiPerFAST IGBT Lightspeed Series Original PDF
    IXGH24N60C4 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF
    IXGH24N60C4D1 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247 Original PDF
    IXGH24N60CD1 IXYS 600V HiPerFAST IGBT with diode Original PDF

    IXGH24N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    24N60

    Abstract: IXGH24N50B IXGH24N60B
    Text: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50B IXGH24N60B 24N50 24N60 O-247 IXGH24N60B

    c2548

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera10 IXGH24N50BU1 c2548 IXGH24N60BU1

    W2515

    Abstract: IXGH24N50BU1 IXGH24N60BU1
    Text: HiPerFASTTM IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 O-247 tempera000 IXGH24N50BU1 W2515 IXGH24N60BU1

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IC110 IXGP24N60C4 IXGH24N60C4 O-220AB 338B2

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP24N60C4 IXGH24N60C4 IC110 O-220AB O-247 338B2

    IXGH24N60C4D1

    Abstract: 24N60C4D1 G24N60
    Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		PDF IXGH24N60C4D1 IC110 O-247 IF110 24N60C4D1 IXGH24N60C4D1 G24N60

    IC110

    Abstract: IXGH24N60C4 IXGP24N60C4
    Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGP24N60C4 IXGH24N60C4 IC110 O-220AB 338B2 IC110 IXGH24N60C4 IXGP24N60C4

    IXGH24N60C4D1

    Abstract: IF110
    Text: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		PDF IXGH24N60C4D1 IC110 O-247 IF110 338B2 IXGH24N60C4D1 IF110

    IXGH24N60C4

    Abstract: IXGP24N60C4
    Text: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		PDF IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 IC110 O-263 O-220 338B2 IXGH24N60C4 IXGP24N60C4

    24N60

    Abstract: IXGH24N60B 24N5 IXGH24N50B 24N50
    Text: HiPerFASTTM IGBT IXGH24N50B IXGH24N60B VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES T J = 25°C to 150°C 500 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW


    Original     		PDF IXGH24N50B IXGH24N60B 24N50 O-247 24N60 frequenc15 24N60 IXGH24N60B 24N5 IXGH24N50B 24N50

    24N60C4D1

    Abstract: G24N60
    Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM


    Original     		PDF IC110 IXGH24N60C4D1 O-247 IF110 24N60C4D1 G24N60

    IXGH24N60B

    Abstract: RG10
    Text: HiPerFASTTM IGBT IXGH 24N60B VCES IC25 VCE sat tfi = = = = 600 48 2.3 80 V A V ns Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30


    Original     		PDF 24N60B O-247 728B1 IXGH24N60B RG10

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    diode DSDI 9

    Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A
    Text: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B


    OCR Scan     		PDF O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A

    smd diode JC 0p

    Abstract: DIODE SMD GEM IXGH24N60AU1S
    Text: Hi Per FAST IGBT with Diode IXGH 24N60AU1 IXGH24N60AU1S CES ^C25 v CE sat Combi Pack tfi = = = = 600 V 48 A 2.7 V 275 ns Preliminary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v*CGR ^ = 25°C to 150°C; RGE = 1 Mi2 600


    OCR Scan     		PDF 24N60AU1 IXGH24N60AU1S O-247 24N60AU1S) 24N60AU1S D94006DE, smd diode JC 0p DIODE SMD GEM IXGH24N60AU1S

    GEM X 365

    Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd
    Text: Prelim inary data HiPerFAST IGBT IXGH24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ


    OCR Scan     		PDF IXGH24N50B IXGH24N60B O-247 24N50 24N60 GEM X 365 24N60 zr smd

    .24n50

    Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1
    Text: Preliminary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES *C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24N*BU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C


    OCR Scan     		PDF IXGH24N50BU1 IXGH24N60BU1 T0-247 24N50 24N60 .24n50 xgh2 IXGH24N60BU1

    24N50

    Abstract: IXGH24N50B IXGH24N60B
    Text: HiPerFAST IGBT V CES IXGH24N50B/S IXGH24N60B/S Maximum Ratings Symbol Test Conditions Vces Tj = 25°C to 150°C 500 600 V v CGfl Tj = 25°C to 150°C; Rge = 1 M fi 500 600 V v GES C ontinuous ±20 V v GEM T ransient ±30 V 'c25 T c = 25°C 48 A 'c90 T c = 90°C


    OCR Scan     		PDF IXGH24N50B/S IXGH24N60B/S 24N50 24N60 O-247 IXGH24N50B IXGH24N60B

    IXGH24N60BU1

    Abstract: 24N50 HIPERFAST IGBT WITH DIODE 24N60 IXGH24N50BU1
    Text: DIXYS Prelim inary data HiPerFAST IGBT with Diode IXGH24N50BU1 IXGH24N60BU1 V CES ^C 25 V CE(sat) t,i 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack TO-247 SMD (24N*BU1S) U Symbol Test Conditions 24N50 24N60 V CES ^ = 25 °C to 150°C 500 600


    OCR Scan     		PDF IXGH24N50BU1 IXGH24N60BU1 24N50 24N60 24N50 HIPERFAST IGBT WITH DIODE 24N60

    24N60

    Abstract: IXGH24N50B IXGH24N60B ixgh24N60
    Text: Preliminary data HiPerFAST IGBT IXGH24N50B IXGH24N60B VoES 'c 25| V CE(sat t« 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns T0-247 SMD (24N*BS) f C (TAB) < Symbol Test C onditions > Maximum Ratings v CES Td = 25°C to 150°C VC3R T.J = 25°C to 150°C; RbE = 1


    OCR Scan     		PDF IXGH24N50B IXGH24N60B T0-247 24N50 24N60 O-247 IXGH24N50B IXGH24N60B ixgh24N60

    24N60

    Abstract: IXGH24N60BU1
    Text: □IXYS HiPerFAST IGBT w i t h Diode Combi Pack ix g h 2 4 n sobui IXGH24N60BU1 v CES ^C 25 V* CE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns P re lim in a ry d a ta Symbol Test Conditions Maximum Ratings 24N50 24N60 G = Gate, C = Collector, E = Emitter,


    OCR Scan     		PDF IXGH24N60BU1 24N50 24N60 O-247 IXGH24N60BU1

    igbt to247

    Abstract: s9011 IXGH24N60AU1S ixgh24N60
    Text: HiPerFAST IGBT with Diode IXGH24N60AU1 IXGH24N60AU1S v CES ^C25 v CE sat t- Symbol Test Conditions v CES v CGR T j = 2 5 °C to 1 5 0 °C 600 V Tj = 25°C to 150°C; RQE = 1 M il 600 V Maximum Ratings v GES Continuous ±20 V v GEM T ransient ±30 V ^C25


    OCR Scan     		PDF IXGH24N60AU1 IXGH24N60AU1S T0-247 24N60AU1S) O-247 24N60AU1 B2-41 1XGH24N68AU1 W6H24WWMMl 24N80AU1 igbt to247 s9011 IXGH24N60AU1S ixgh24N60

    e5200

    Abstract: IXGH24N50B IXGH24N60B
    Text: OIXYS V CES ^C 25 V CE(sat) 500 V 48 A 2.3 V 80 ns 600 V 48 A 2.5 V 80 ns HiPerFAST IGBT IXGH24N50B IXGH24N60B Preliminary data Symbol TO-247 AD Test Conditions Maximum Ratings 24N50 24N60 V CES T j = 25°C to 150°C 500 600 V V CGR T,J = 25°C to 150°C; F be


    OCR Scan     		PDF IXGH24N50B IXGH24N60B O-247 24N50 24N60 e5200 IXGH24N60B

    931 diode smd

    Abstract: g20n60
    Text: □ IXYS V CES IXGH 24N60AU1 IXGH 24N60AU1S ^C25 V CE sat t fi HiPerFAST IGBT with Diode Combi Pack Symbol Test Conditions Maximum Ratings V CES Tj = 25°C to 150°C 600 V V* CGR Tj = 25°C to 150°C; RGE = 1 MÎ2 600 V vWGES Continuous ±20 V V* GEM Transient


    OCR Scan     		PDF 24N60AU1 24N60AU1S O-247 24N60AU1S) IXGH24N60AU1 IXGH24N60AU1S 4bflb22t. 931 diode smd g20n60