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IXYS Corporation IXGH24N60C4 IGBT 600V 56A 190W TO247
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IXYS Corporation IXGH24N60C4D1 IGBT 600V 56A 190W TO247
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IXYS Integrated Circuits Division IXGH24N60C4D1 IGBT DIS.DIODE SINGLE 24A 600V H.GAIN TO247-3
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Ozdisan Elektronik	IXGH24N60C4D1					1 $3.12631 10 $3.12631 100 $2.8421 1000 $2.8421 10000 $2.8421	Get Quote

IXGH24N60C4 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
IXGH24N60C4		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247		Original	PDF
IXGH24N60C4D1		IXYS	IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 56A 190W TO247		Original	PDF

IXGH24N60C4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Advance Technical Information High-Gain IGBTs VCES IC110 VCE sat tfi(typ) IXGP24N60C4 IXGH24N60C4 High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IC110 IXGP24N60C4 IXGH24N60C4 O-220AB 338B2
Untitled Abstract: No abstract text available Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGP24N60C4 IXGH24N60C4 IC110 O-220AB O-247 338B2
IXGH24N60C4D1 Abstract: 24N60C4D1 G24N60 Text: High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM	Original	PDF	IXGH24N60C4D1 IC110 O-247 IF110 24N60C4D1 IXGH24N60C4D1 G24N60
IC110 Abstract: IXGH24N60C4 IXGP24N60C4 Text: Advance Technical Information IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-220AB (IXGP) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGP24N60C4 IXGH24N60C4 IC110 O-220AB 338B2 IC110 IXGH24N60C4 IXGP24N60C4
IXGH24N60C4D1 Abstract: IF110 Text: Advance Technical Information High-Gain IGBT w/ Diode IXGH24N60C4D1 VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ	Original	PDF	IXGH24N60C4D1 IC110 O-247 IF110 338B2 IXGH24N60C4D1 IF110
IXGH24N60C4 Abstract: IXGP24N60C4 Text: Advance Technical Information IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 High-Gain IGBTs VCES IC110 VCE sat tfi(typ) High-Speed PT Trench IGBTs = = ≤ = 600V 24A 2.70V 68ns TO-263 (IXGA) G E C (Tab) TO-220 (IXGP) Symbol Test Conditions Maximum Ratings VCES VCGR	Original	PDF	IXGA24N60C4 IXGP24N60C4 IXGH24N60C4 IC110 O-263 O-220 338B2 IXGH24N60C4 IXGP24N60C4
24N60C4D1 Abstract: G24N60 Text: High-Gain IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXGH24N60C4D1 High-Speed PT Trench IGBT = = ≤ = 600V 24A 2.70V 68ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES VGEM	Original	PDF	IC110 IXGH24N60C4D1 O-247 IF110 24N60C4D1 G24N60