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    IXFT26N60 Search Results

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    IXFT26N60 Price and Stock

    Littelfuse Inc IXFT26N60P

    MOSFET N-CH 600V 26A TO268
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    DigiKey IXFT26N60P Tube 300
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    Newark IXFT26N60P Bulk 300
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    RS IXFT26N60P Bulk 8 Weeks 30
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    IXYS Corporation IXFT26N60Q

    MOSFET N-CH 600V 26A TO268
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    IXYS Corporation IXFT26N60P

    MOSFETs 600V 26A
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    Mouser Electronics IXFT26N60P
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    TTI IXFT26N60P Tube 300
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    TME IXFT26N60P 1
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    IXFT26N60 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXFT26N60 IXYS HiPerFET Power MOSFETs Original PDF
    IXFT26N60P IXYS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Original PDF
    IXFT26N60Q IXYS 600V HiPerFET power MOSFET Q-class Original PDF

    IXFT26N60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IXFH26N60P

    Abstract: IXFV26N60P 26n60 26N60PS 26N60P IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS O-247) 26N60P 26N60P 26N60PS O-247 IXFH26N60P IXFV26N60P 26n60 26N60PS IXFT26N60P IXFV26N60PS PLUS220SMD ixfh26n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A Ω RDS on ≤ 270 mΩ ≤ 200 ns trr IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    IXFH26N60P IXFT26N60P IXFV26N60P IXFV26N60PS 26N60P 26N60P 26N60PS O-247 PLUS220SMD PDF

    26n60

    Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original
    26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ


    Original
    26N60 O-268 O-247 O-268 728B1 123B1 065B1 PDF

    26N60

    Abstract: 28n60
    Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT


    Original
    26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60 PDF

    Untitled

    Abstract: No abstract text available
    Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT


    OCR Scan
    26N60/IXFT 26N60 28N60 O-247 PDF

    ne 22 mosfet

    Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
    Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)


    OCR Scan
    ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 PDF