Datasheet Archive: IXFT12N100Q datasheets

IXFT12N100Q Price and Stock

Filter by Manufacturer


IXYS Corporation IXFT12N100Q MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100Q	Tube			30	1 - 10 - 100 $14.725 1000 $14.725 10000 $14.725	Buy Now

IXFT12N100Q Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFT12N100Q		IXYS	1000V HiPerFET power MOSFET		Original	PDF

IXFT12N100Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1	PDF
10N100 Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF

Catalog Datasheet

Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM

Original

IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1

PDF

10N100

Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q
Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM

Original

IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q

PDF

ne 22 mosfet

Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50
Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)

OCR Scan

ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50

PDF