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Vishay Siliconix SIHH26N60E-T1-GE3 MOSFET N-CH 600V 25A PPAK 8 X 8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHH26N60E-T1-GE3	Digi-Reel	5,625		1	1 $6.35 10 $4.263 100 $6.35 1000 $2.52 10000 $2.52	Buy Now
	SIHH26N60E-T1-GE3	Cut Tape	5,625		1	1 $6.35 10 $4.263 100 $6.35 1000 $2.52 10000 $2.52	Buy Now
STMicroelectronics STL26N60DM6 MOSFET N-CH 600V 15A PWRFLAT HV
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL26N60DM6	Digi-Reel	2,997		1	1 $4.72 10 $3.123 100 $4.72 1000 $1.70703 10000 $1.70703	Buy Now
	STL26N60DM6	Cut Tape	2,997		1	1 $4.72 10 $3.123 100 $4.72 1000 $1.70703 10000 $1.70703	Buy Now
	STL26N60DM6	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $1.69325	Buy Now
Avnet Americas	STL26N60DM6	Reel		14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $1.66616	Buy Now
STMicroelectronics	STL26N60DM6				1	1 $4.35 10 $2.95 100 $2.13 1000 $1.76 10000 $1.76	Buy Now
TME	STL26N60DM6				1	1 $3.69 10 $3.32 100 $2.93 1000 $2.37 10000 $2.09	Get Quote
Avnet Silica	STL26N60DM6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	STL26N60DM6			15 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFH26N60P MOSFET N-CH 600V 26A TO247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH26N60P	Tube	2,160		1	1 $10.15 10 $10.15 100 $6.01 1000 $4.69013 10000 $4.69013	Buy Now
RS	IXFH26N60P	Bulk		8 Weeks	30	1 - 10 - 100 $7.25 1000 $7.25 10000 $7.25	Get Quote
STMicroelectronics STFI26N60M2 MOSFET N-CH 600V 20A I2PAKFP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STFI26N60M2	Tube	1,494		1	1 $4.31 10 $4.31 100 $4.31 1000 $1.53637 10000 $1.53637	Buy Now
Vishay Siliconix IRFP26N60LPBF MOSFET N-CH 600V 26A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFP26N60LPBF	Tube	1,379		1	1 $10.65 10 $10.65 100 $10.65 1000 $5 10000 $5	Buy Now

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26N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
26N60P Abstract: PLUS220SMD Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 = = RDS on ≤ ≤ trr TO-247 (IXFH) Symbol	Original	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26N60P PLUS220SMD	PDF
26n60q Abstract: No abstract text available Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions Maximum Ratings VDSS VDGR	Original	26N60Q 247TM O-264 728B1 26n60q	PDF
26n60 Abstract: 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49 Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 26n60 28n60 IXFK28N60 IXFH26N60 IXFT26N60 ixfh 26 n 49	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60 IXFT 26N60 ID25 RDS on 600 V 26 A 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	26N60 O-268 O-247 O-268 728B1 123B1 065B1	PDF
26N60Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR T J = 25°C to 150°C	Original	26N60Q ISOPLUS247TM 247TM E153432	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q 247TM 728B1	PDF
26n60 Abstract: 26N60P PLUS220SMD Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 PLUS220SMD PLUS220 O-268 26n60 26N60P PLUS220SMD	PDF
max2678 Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω ≤ 200 ns trr IXFH 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	26N60P 26N60PS O-247 O-268 PLUS220 max2678	PDF
Untitled Abstract: No abstract text available Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET VDSS ID25 = = RDS on ≤ ≤ trr IXFH 26N60P IXFQ 26N60P IXFT 26N60P IXFV 26N60P IXFV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol	Original	26N60P 26N60PS O-247 405B2 26N60P PLUS220	PDF
DSA003703 Abstract: 26n60 Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 O-268 DSA003703 26n60	PDF
26N60P Abstract: TO-248 Text: Advance AdvanceTechnical TechnicalInformation Information PolarHVTM Power MOSFET IXTH 26N60P IXTQ 26N60P IXTT 26N60P IXTV 26N60P IXTV 26N60PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated VDSS ID25 RDS on TO-247 (IXTH) Symbol Test Conditions	Original	26N60P 26N60PS O-247 O-268 PLUS220 PLUS220SMD TO-248	PDF
26N60Q Abstract: C2770 IXFH26N60Q Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM	Original	26N60Q O-247 728B1 123B1 728B1 065B1 26N60Q C2770 IXFH26N60Q	PDF
26N60Q Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V I D25 IDM I AR	Original	26N60Q 26N60Q O-247 O-268 O-268	PDF
26N60Q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class VDSS ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600	Original	26N60Q 26N60Q O-247 O-268 O-264 O-268	PDF

spf560 Abstract: 26N60Q Text: HiPerFETTM Power MOSFETs IXFR 26N60Q ISOPLUS247TM Q-CLASS Electrically Isolated Back Surface N-Channel Enhancement Mode Avalance Rated, High dV/dt Low Gate Charge and Capacitances trr £ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q ISOPLUS247TM spf560 26N60Q	PDF
26N60Q Abstract: No abstract text available Text: Advanced Technical Information HiPerFETTM Power MOSFETs IXFH 26N60Q IXFK 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V	Original	26N60Q 26N60Q O-247 O-268 O-268AA	PDF
26N60 Abstract: 28n60 Text: HiPerFETTM Power MOSFETs VDSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr ID25 600 V 26 A 600 V 28 A trr £ 250 ns RDS on 0.25 W 0.25 W Preliminary data Symbol Test Conditions Maximum Ratings IXFH/ IXFT	Original	26N60/IXFT 26N60 28N60 O-247 O-268AA 28n60	PDF
26n60q Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs IXFH 26N60Q IXFT 26N60Q Q-Class Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 600 600 V V VGS VGSM Continuous Transient ±20 ±30 V V ID25 IDM IAR TC = 25°C TC = 25°C, pulse width limited by TJM	Original	26N60Q O-247 728B1 26n60q	PDF
26n60 Abstract: 26N60Q k 2134 Text: HiPerFETTM Power MOSFETs IXFK 26N60Q IXFX 26N60Q VDSS ID25 RDS on Q-Class = 600 V = 26 A = 0.25 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Preliminary Data Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	26N60Q 247TM O-264 728B1 26n60 26N60Q k 2134	PDF
5007a Abstract: No abstract text available Text: IXTH 26N60P IXTQ 26N60P IXTT 26N50P IXTV 26N60P IXTV 26N60PS PolarHVTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated VDSS = 600 V ID25 = 26 A RDS on ≤ 270 m Ω TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C	Original	26N60P 26N50P 26N60PS O-247 O-268 26N60P 5007a	PDF
Untitled Abstract: No abstract text available Text: PolarHVTM Power MOSFET VDSS = 800 V ID25 = 16 A Ω RDS on ≤ 600 mΩ ≤ 250 ns trr IXFH 16N80P IXFT 16N80P IXFV 16N80P IXFV 16N80PS N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated TO-247 (IXFH) Symbol Test Conditions Maximum Ratings VDSS	Original	16N80P 16N80PS O-247 26N60P 26N60P 26N60PS	PDF
transistor 12n60c Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design	Original	ISOPLUS247TM ISOPLUS247TM PLUS247TM-package FBO16-08N FBE22-06N1 21-05QC 22-08N 75-01F 21-08i01 transistor 12n60c 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET	PDF
Untitled Abstract: No abstract text available Text: n ix Y S Advanced Technical Information HiPerFET Power MOSFETs V DSS IXFH 26N60/IXFT 26N60 IXFK 28N60 N-Channel Enhancement Mode Avalanche Rated, Highdv/dt, Lowtrr D DS on ^D25 600 V 26 A 600 V 28 A trr < 250 ns 0.25 Q 0.25 Q Maximum Ratings IXFH/IXFT	OCR Scan	26N60/IXFT 26N60 28N60 O-247	PDF
12N60c equivalent Abstract: 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q Text: ISOPLUS Family ISOPLUS220 ISOPL US247™ ISOPLUS ¡4-PAC™ IS O P LU S 22rM Isolated Discrete Packages IS O P LU S 247™ is th e D C B is o la te d version o f th e P L U S 247™ -package TO 2 4 7 w ith o u t a m o u n tin g h o le . T h e d e s ig n o f th is n e w p a c k a g e (p a te n t	OCR Scan	ISOPLUS220TM US247TM 247TM ISOPLUS22rM ISOPLUS227TM IXFE180N10 IXFE73N30Q IXFE48N50Q IXFE48N50QD2 12N60c equivalent 13N50 equivalent equivalent of IGBT 12N60C motor IG 2200 19 ixlf 19n250a 24N60CD1 19N250 32N50 004II 27N80Q	PDF

26N60 Search Results

26N60 Price and Stock

Vishay Siliconix SIHH26N60E-T1-GE3

STMicroelectronics STL26N60DM6

Littelfuse Inc IXFH26N60P

STMicroelectronics STFI26N60M2

Vishay Siliconix IRFP26N60LPBF

26N60 Datasheets Context Search

26N60P

26n60q

26n60

Untitled

26N60Q

Untitled

26n60

max2678

Untitled

DSA003703

26N60P

26N60Q

26N60Q

26N60Q

spf560

26N60Q

26N60

26n60q

26n60

5007a

Untitled

transistor 12n60c

Untitled

12N60c equivalent