IXFT12N100 Search Results

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IXYS Corporation IXFT12N100 MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100	Tube			30	1 - 10 - 100 $10.03267 1000 $10.03267 10000 $10.03267	Buy Now
Mouser Electronics	IXFT12N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFT12N100Q MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100Q	Tube			30	1 - 10 - 100 $14.725 1000 $14.725 10000 $14.725	Buy Now
IXYS Corporation IXFT12N100F MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100F	Tube			30	1 - 10 - 100 $6.76167 1000 $6.76167 10000 $6.76167	Buy Now
IXYS Integrated Circuits Division IXFT12N100F MOSFET DIS.12A 1000V N-CH TO268(D3PAK) HIPERFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFT12N100F					1 $7.02889 10 $7.02889 100 $6.3899 1000 $6.3899 10000 $6.3899	Get Quote

IXFT12N100 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFT12N100		IXYS	1000V HiPerFET power MOSFET		Original	PDF
IXFT12N100F		IXYS	1000V HiPerRF power MOSFET		Original	PDF
IXFT12N100Q		IXYS	1000V HiPerFET power MOSFET		Original	PDF

IXFT12N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
10N100 Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	PDF	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q
13n10 Abstract: No abstract text available Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS	OCR Scan	PDF	IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10
TO-264 weight Abstract: No abstract text available Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038	OCR Scan	PDF	IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	PDF	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50