IXFT12N10 Search Results

IXFT12N10 Price and Stock

Filter by Manufacturer


IXYS Corporation IXFT12N100 MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100	Tube			30	1 - 10 - 100 $10.03267 1000 $10.03267 10000 $10.03267	Buy Now
Mouser Electronics	IXFT12N100					1 - 10 - 100 - 1000 - 10000 -	Get Quote
IXYS Corporation IXFT12N100Q MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100Q	Tube			30	1 - 10 - 100 $14.725 1000 $14.725 10000 $14.725	Buy Now
IXYS Corporation IXFT12N100F MOSFET N-CH 1000V 12A TO268
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFT12N100F	Tube			30	1 - 10 - 100 $6.76167 1000 $6.76167 10000 $6.76167	Buy Now
IXYS Integrated Circuits Division IXFT12N100F MOSFET DIS.12A 1000V N-CH TO268(D3PAK) HIPERFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXFT12N100F					1 $6.92494 10 $6.92494 100 $6.2954 1000 $6.2954 10000 $6.2954	Get Quote

IXFT12N10 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXFT12N100		IXYS	1000V HiPerFET power MOSFET		Original	PDF
IXFT12N100F		IXYS	1000V HiPerRF power MOSFET		Original	PDF
IXFT12N100Q		IXYS	1000V HiPerFET power MOSFET		Original	PDF

IXFT12N10 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: HiPerRFTM Power MOSFETs VDSS = ID25 = RDS on ≤ ≤ trr IXFH12N100F IXFT12N100F F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 1000V 12A Ω 1.05Ω 250ns TO-247 (IXFH) Symbol Test Conditions	Original	IXFH12N100F IXFT12N100F 250ns O-247 O-268 338B2	PDF
IXFH12N100F Abstract: IXFT12N100F Text: IXFH12N100F IXFT12N100F HiPerRFTM Power MOSFETs VDSS = = ID25 RDS on ≤ trr ≤ F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg, High dV/dt, Low trr 1000V 12A Ω 1.05Ω 250ns TO-247 (IXFH) Symbol Test Conditions	Original	IXFH12N100F IXFT12N100F 250ns O-247 00A/s, O-268 338B2 IXFH12N100F IXFT12N100F	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
10N100 Abstract: 12N100Q 125OC d 209 l ixfT12N10 10N100Q Text: HiPerFETTM Power MOSFETs Q Class VDSS trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C IDM TC = 25°C, pulse width limited by TJM	Original	IXFH/IXFT12N100Q IXFH/IXFT10N100Q O-247 12N100Q 10N100Q 728B1 10N100 12N100Q 125OC d 209 l ixfT12N10 10N100Q	PDF
Untitled Abstract: No abstract text available Text: □ IXYS HIPerFET vv DSS Power MOSFETs N-Channel Enhancement Mode High dv/dt, L o w trr, HDMOS™ Family 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 10 A 1.20 Q 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Sym bol T est Conditions	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100	PDF
IXYS DS 145 Abstract: 13N100 Text: IXYS v DSS HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFT10N100 IXFT12N100 IXFT 13N100 D ^D25 DS on 1000 V 10 A 1.20 Q 1000 V 12 A 1.05 Q 1000 V 12.5 A 0.90 Q trr <250 ns Preliminary data Maximum Ratings V DSS	OCR Scan	IXFT10N100 IXFT12N100 13N100 10N100 12N100 13N100 IXYS DS 145	PDF
13n10 Abstract: No abstract text available Text: HiPerFET Power MOSFETs N-Channel Enhancement Mode High dv/dt, Lowt^, HDMOS™ Family VDSS 1000 V 1000 V 1000 V trr < 250 IXFT10N100 IXFT12N100 IXFT13N100 p ^D25 DS on 10 A 1.20 n 12 A 1.05 Q 12.5 A 0.90 Q ns Preliminary data Symbol Test Conditions v DSS	OCR Scan	IXFT10N100 IXFT12N100 IXFT13N100 10N100 12N100 13N100 13n10	PDF
TO-264 weight Abstract: No abstract text available Text: High Switching Speed Power MOSFETs F-Class HiPerRF power MOSFET ^D S S b co n t p DS on) °» PD Package style Tc = 25°C Tc = 25°C >• New V A n Fig. No. Type Outline drawings on page 91-100 > IX F H 6 0 N 2 0 F ► IXFT60N20F 200 60 60 0.038 0.038	OCR Scan	IXFT60N20F IXFH12N50F IXFT12N50F IXFH21N50F IXFT21N50F IXFH28N50F IXFT28N50F IXFK44N50F IXFX44N50F IXFK55N50F TO-264 weight	PDF
ne 22 mosfet Abstract: IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50 Text: HiPerFET Power MOSFETs L° w Gate-Ch TVPeS = S u „t9 Q Avalanche rated with Fast Intrinsic Diode VDSS Max. V p DSON Wort) Tc=25 C T_=25 C A m l) G on) ISOPLUS220™ (C) ISOPLUS247™V T0268 TO-263 TO-220 PLU S 247™ ^^ l3PAK (x > .4 TO-247 ‘ (H)	OCR Scan	ISOPLUS220TM ISOPLUS247TMV T0268 T0264 OT227B O-263 O-220 247TM O-247 O-204 ne 22 mosfet IXFH26N60Q IXFT12N100Q IXFR100N25 IXFN26N90 FN230 IXFN36N60 N50P IXFN44N50U2 IXFN80N50	PDF