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    IXBF20N300 Search Results

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    IXBF20N300 Price and Stock

    IXYS Corporation IXBF20N300

    IGBT 3000V 34A ISOPLUSI4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF20N300 Tube 25
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    • 100 $51.7252
    • 1000 $51.7252
    • 10000 $51.7252
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    Mouser Electronics IXBF20N300
    • 1 -
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    • 1000 $55.17
    • 10000 $55.17
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    Future Electronics IXBF20N300 Tube 24 Weeks 25
    • 1 -
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    • 100 $37.51
    • 1000 $37.51
    • 10000 $37.51
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    TME IXBF20N300 9 1
    • 1 $63.39
    • 10 $54.11
    • 100 $54.11
    • 1000 $54.11
    • 10000 $54.11
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    New Advantage Corporation IXBF20N300 20 1
    • 1 -
    • 10 $137.4
    • 100 $128.24
    • 1000 $128.24
    • 10000 $128.24
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    Littelfuse Inc IXBF20N300

    Disc Igbt Bimsft-Veryhivolt I4-Pak Iso+/Tube |Littelfuse IXBF20N300
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    Newark IXBF20N300 Bulk 300
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    IXYS Integrated Circuits Division IXBF20N300

    IGBT DIS.DIODE SINGLE 14A 3000V BIMOSFET ISOPLUSI4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Ozdisan Elektronik IXBF20N300 25
    • 1 $102.91249
    • 10 $102.91249
    • 100 $96.1799
    • 1000 $96.1799
    • 10000 $96.1799
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    IXBF20N300 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IXBF20N300 IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 34A 150W ISOPLUSI4 Original PDF

    IXBF20N300 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IXBF20N300

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


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    PDF IXBF20N300 20N300 1-23-09-A IXBF20N300

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXBF20N300 IC110 IC110 50/60Hz, 20N300 6-05-12-B

    Untitled

    Abstract: No abstract text available
    Text: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V IXBF20N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IC110 IXBF20N300 20N300 6-05-12-B

    IXBF20N300

    Abstract: 20N300 20N30 ic901 TF550 b20n300 S 2230
    Text: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original
    PDF IXBF20N300 20N300 IXBF20N300 20N30 ic901 TF550 b20n300 S 2230

    IXGF30N400

    Abstract: IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250
    Text: IXYSPOWER P R O D U C T B R I E F Efficiency Through Technology Very High Voltage Discrete Portfolio From the recognized industry leader for discrete semiconductor products above 2500V august 2009 OVERVIEW As the new “Green-World Economy” unfolds, Design Engineers


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    PDF O-264 IXBX55N300 PLUS247 IXBF55N300 O-268 O-247 IXGF30N400 IXGF4N400 IXGF25N250 pulser isoplus IXGF54N400 Discrete IGBTS IXTH1N250 IXBX64N250 IXGT25N250

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    IXBK55N300

    Abstract: IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250
    Text: POWER Efficiency Through Technology N E W PR O D U C T BR I E F High Voltage BiMOSFETsTM IXYS expands its bimosfet tm porTfolio to 3kv with the introduction of its new hv bimosfetsTM september 2009 OVERVIEW IXYS High Voltage BiMOSFETsTM are a unique class of high gain devices featuring blocking


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    PDF E153432) com/IXAN0022 IXBK55N300 IXBF55N300 IXBH32N300 BiMOSFET radar system with circuit diagram IXBH20N300 IXBH12N300 bimos high speed bridge rectifier IXBH2N250