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    FIXED IND 150UH 1.05A 288MOHM SM
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    TDK Corporation CLF6045NIT-151M-D

    FIXED IND 150UH 530MA 576MOHM SM
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    TDK Corporation CLF7045NIT-151M-D

    FIXED IND 150UH 690MA 520MOHM SM
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    TDK Corporation CLF12577NIT-151M-D

    FIXED IND 150UH 1.8A 204MOHM SMD
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    TDK Corporation CLF5030NIT-151M-D

    FIXED IND 150UH 320MA 1.548 OHM
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    DigiKey CLF5030NIT-151M-D Reel 2,000
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    IT151 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    a1606

    Abstract: No abstract text available
    Text: Ordering number : ENA1606A CPH6153 Bipolar Transistor http://onsemi.com –20V, –3A, Low VCE sat , PNP Single CPH6 Applications • Load switch, DC-DC converter, motor drivers, charger Features • • • • • • • Adoption of MBIT process Large current capacity


    Original
    ENA1606A CPH6153 A1606-6/6 a1606 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1605A MCH6124 Bipolar Transistor –20V, –3A, Low VCE sat , PNP Single MCPH6 http://onsemi.com Applications • Load switch, DC-DC converter, motor drivers, charger Features • • • • • • Large current capacity Adoption of MBIT process


    Original
    ENA1605A MCH6124 A1605-6/6 PDF

    ATP108

    Abstract: IT1518 ena1604
    Text: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.


    Original
    ATP108 ENA1604 PW10s) PW10s, A1604-4/4 ATP108 IT1518 ena1604 PDF

    a1603

    Abstract: ATP107
    Text: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.


    Original
    ATP107 ENA1603 PW10s) PW10s, A1603-4/4 a1603 ATP107 PDF

    RD2003

    Abstract: A1593 RD2003JN ENA1593
    Text: RD2003JN Ordering number : ENA1593 SANYO Semiconductors DATA SHEET RD2003JN Diffused Junction Silicon Diode Low VF • High-Speed Switching Diode Features • • • • • High breakdown voltage VRRM=300V . High reliability. Fast forward / reverse recovery time.


    Original
    RD2003JN ENA1593 A1593-3/3 RD2003 A1593 RD2003JN ENA1593 PDF

    TIG064E8

    Abstract: A1602
    Text: TIG064E8 Ordering number : ENA1602 SANYO Semiconductors DATA SHEET TIG064E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • • • • Low-saturation voltage. Low voltage drive 2.5V . Enhansment type. Built-in Gate-to-Emitter protection diode.


    Original
    TIG064E8 ENA1602 12mm2. VCE320V, A1602-5/5 TIG064E8 A1602 PDF

    A1598

    Abstract: FW274 W274
    Text: FW274 Ordering number : ENA1598 SANYO Semiconductors DATA SHEET FW274 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    FW274 ENA1598 PW10s) 2000mm2 PW10s A1598-4/4 A1598 FW274 W274 PDF

    Untitled

    Abstract: No abstract text available
    Text: CPH3456 Ordering number : ENA1803 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET CPH3456 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=54mΩ(typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    ENA1803 CPH3456 PW10s, 900mm2 015A-004 A1803-4/4 PDF

    a1712 mosfet

    Abstract: A1712
    Text: Ordering number : ENA1712A ATP214 N-Channel Power MOSFET http://onsemi.com 60V, 75A, 8.1mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=6.2mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=4850pF(typ.) Halogen free compliance •


    Original
    ENA1712A ATP214 4850pF PW10s) PW10s, L100H, A1712-7/7 a1712 mosfet A1712 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1594A SCH1433 N-Channel Power MOSFET http://onsemi.com 20V, 3.5A, 64mΩ, Single SCH6 Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage


    Original
    ENA1594A SCH1433 PW10s, 900mm2 A1594-7/7 PDF

    A1601

    Abstract: IT13903
    Text: MCH6001 注文コード No. N A 1 6 0 1 三洋半導体データシート N MCH6001 NPN エピタキシァルプレーナ型シリコン複合トランジスタ 高周波低雑音増幅 特長 ・ 低雑音である :NF=1.2dB typ(f=1GHz) 。 ・ しゃ断周波数が高い :fT=16GHz typ(VCE=5V)


    Original
    MCH6001 16GHz S21e2 MCH4020 S21e2 IT13903 IT15151 IT15152 IT13908 A1601 IT13903 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance


    Original
    ENA1754A ATP112 1450pF PW10s) PW10s, --10V, --13A A1754-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1580A SMA3103 MMIC Amplifier, 5V, 19mA, 0.1 to 3.3GHz, MCPH6 http://onsemi.com Features • • • • • High Gain Wideband response Low current High output power Port impedance : Gp=26.5dB typ. @1GHz : fu=3.3GHz : ICC=19mA typ : Po 1dB =5dBm


    Original
    ENA1580A SMA3103 A1580-8/8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENA1601A MCH6001 RF Transistor 8V, 150mA, fT=16GHz NPN Dual MCPH6 http://onsemi.com Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=16GHz typ (VCE=5V) High gain : |S21e|2=16dB typ (f=1GHz) Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting


    Original
    ENA1601A MCH6001 150mA, 16GHz MCH4020 60ere A1601-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: TIG064E8 Ordering number : ENA1602A SANYO Semiconductors DATA SHEET TIG064E8 N-Channel IGBT Light-Controlling Flash Applications Features • • • • Low-saturation voltage Enhansment type Mounting Height 0.9mm, Mounting Area 8.12mm2 Halogen free compliance


    Original
    TIG064E8 ENA1602A 12mm2 A1602-7/7 PDF

    a1711

    Abstract: A1711-2 ENA1711 ATP114 A1711-1 A1711-3
    Text: ATP114 Ordering number : ENA1711 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP114 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=12mΩ(typ.) 4V drive • • Input Capacitance Ciss=4000pF(typ.) Halogen free compliance


    Original
    ATP114 ENA1711 4000pF A1711-4/4 a1711 A1711-2 ENA1711 ATP114 A1711-1 A1711-3 PDF

    ATP113

    Abstract: No abstract text available
    Text: ATP113 Ordering number : ENA1755 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive • • Input Capacitance Ciss=2400pF(typ.) Halogen free compliance


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    ATP113 ENA1755 2400pF A1755-4/4 ATP113 PDF

    MCH3479

    Abstract: SC82
    Text: MCH3479 Ordering number : ENA1813 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3479 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=49mΩ (typ.) 1.8V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C


    Original
    MCH3479 ENA1813 PW10s, 900mm2 A1813-4/4 MCH3479 SC82 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6001 Ordering number : ENA1601 SANYO Semiconductors DATA SHEET MCH6001 NPN Epitaxial Planar Silicon Composite Transistor High Frequency Low-Noise Amplifier Features • • • • Low-noise use : NF=1.2dB typ f=1GHz . High cut-off frequency : fT=16GHz typ (VCE=5V).


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    MCH6001 ENA1601 16GHz MCH4020 A1601-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATP107 Ordering number : ENA1603A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP107 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive


    Original
    ATP107 ENA1603A A1603-7/7 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCH1433 Ordering number : ENA1594 SANYO Semiconductors DATA SHEET SCH1433 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter


    Original
    SCH1433 ENA1594 900mm2Ã A1594-4/4 PDF

    ATP113

    Abstract: No abstract text available
    Text: ATP113 Ordering number : ENA1755A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP113 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=22.5mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=2400pF(typ.)


    Original
    ENA1755A ATP113 2400pF PW10s) PW10s, A1755-7/7 ATP113 PDF

    Untitled

    Abstract: No abstract text available
    Text: ATP107 Ordering number : ENA1603 SANYO Semiconductors DATA SHEET ATP107 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.


    Original
    ENA1603 ATP107 PW10s) PW10s, --10V, A1603-4/4 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT1507 u r m TECHNOLOGY 500kHz M o n o lith ic Buck M o d e S w itching R egulator F€RTUR€S • Constant 500kHz Switching Frequency ■ Uses All Surface Mount Components ■ Operates with Inputs as Low as 4V ■ Saturated Switch Design 0.30 ■ Cycle-by-Cycle Current Limiting


    OCR Scan
    LT1507 500kHz LT1375 25ower LT1372 LT1375 PDF