Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1754A ATP112 P-Channel Power MOSFET http://onsemi.com –60V, –25A, 43mΩ, Single ATPAK Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754A
ATP112
1450pF
PW10s)
PW10s,
--10V,
--13A
A1754-7/7
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ATP112
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ATP112
ENA1754
1450pF
A1754-4/4
ATP112
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive • • Input Capacitance Ciss=1450pF(typ.) Halogen free compliance
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ENA1754
ATP112
1450pF
PW10s)
PW10s,
A1754-4/4
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M4563
Abstract: ATP112
Text: ATP112 注文コード No. N A 1 7 5 4 三洋半導体データシート N ATP112 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ オン抵抗 RDS on 1=33mΩ(typ.) ・ 4V 駆動 ・ 入力容量 Ciss=1450pF(typ.)
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ATP112
1450pF
--10V
IT15592
IT15599
A1754-3/4
M4563
ATP112
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)
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ATP112
ENA1754A
1450pF
A1754-7/7
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Untitled
Abstract: No abstract text available
Text: ATP112 Ordering number : ENA1754A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP112 General-Purpose Switching Device Applications Features • • • ON-resistance RDS on 1=33mΩ(typ.) 4V drive Protection diode in Input Capacitance Ciss=1450pF(typ.)
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ATP112
ENA1754A
1450pF
150etc.
A1754-7/7
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FQP45N03L
Abstract: FQP45N03
Text: FQP45N03L N-Channel Logic Level PWM Optimized Power MOSFET General Description Features This device employs a new advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03L
FQP45N03
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AN9321
Abstract: AN9322 ISL9N312ASK8T MS-012AA TB334 N312AS
Text: ISL9N312ASK8T Data Sheet January 2002 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. PWM Optimized Features
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ISL9N312ASK8T
ISL9N312ASK8
MS-012AA
AN9321
AN9322
ISL9N312ASK8T
MS-012AA
TB334
N312AS
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n312ad
Abstract: No abstract text available
Text: PWM Optimized ISL9N312AD3ST/ ISL9N312AD3 N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 12mΩ General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N312AD3ST/
ISL9N312AD3
1450pF
O-252
O-252)
O-251AA)
n312ad
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FQP45N03LT
Abstract: FQP45N03L
Text: FQP45N03L N-Channel Logic Level MOSFETs 30V, 39A, 0.021Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQP45N03L
1450pF
O-220AB
FQP45N03LT
FQP45N03L
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N316AD
Abstract: No abstract text available
Text: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N316AD3ST
1450pF
O-252
N316AD
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Untitled
Abstract: No abstract text available
Text: FQB60N03L N-Channel Logic Level MOSFETs 30V, 55A, 0.012Ω General Description Features This device employs advanced MOSFET technology and features low gate charge while maintaining low onresistance. • Fast switching Optimized for switching applications, this device improves
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FQB60N03L
1450pF
O-263AB
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N316A
Abstract: No abstract text available
Text: ISL9N316AP3, ISL9N316AS3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
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ISL9N316AP3,
ISL9N316AS3ST
N316A
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ISL9N316AP3
Abstract: ISL9N316AS3ST N316
Text: ISL9N316AP3/ISL9N316AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N316AP3/ISL9N316AS3ST
1450pF
O-263AB
O-220AB
ISL9N316AP3
ISL9N316AS3ST
N316
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n312ad
Abstract: ISL9N312AD3ST 25E5 tube ISL9N312AD3 11A ABS
Text: ISL9N312AD3 / ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3
ISL9N312AD3ST
1450pF
O-251AA)
O-252
O-252)
n312ad
ISL9N312AD3ST
25E5 tube
11A ABS
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FST8460SL
Abstract: No abstract text available
Text: MCC FST8460SL omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU FST84100SL Features • • • • 80 Amp Schottky Barrier Rectifier 60 to 100 Volts Metal of siliconrectifier, majonty carrier conducton
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FST8460SL
FST84100SL
FST8480SL
FST8460SL
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n312ad
Abstract: 69E-10
Text: ISL9N312AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AD3ST
1450pF
O-252
n312ad
69E-10
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N312AS
Abstract: N312AP n312* transistor ISL9N312AP3 ISL9N312AS3ST
Text: ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AP3/ISL9N312AS3ST
1450pF
O-263AB
O-220AB
N312AS
N312AP
n312* transistor
ISL9N312AP3
ISL9N312AS3ST
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ISL9N316AP3
Abstract: ISL9N316AS3ST N316A
Text: ISL9N316AP3/ISL9N316AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N316AP3/ISL9N316AS3ST
1450pF
O-263AB
O-220AB
ISL9N316AP3
ISL9N316AS3ST
N316A
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N312AP
Abstract: N312AS N312A ISL9N312AP3 ISL9N312AS3ST
Text: ISL9N312AP3/ISL9N312AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N312AP3/ISL9N312AS3ST
1450pF
O-263AB
O-220AB
N312AP
N312AS
N312A
ISL9N312AP3
ISL9N312AS3ST
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N312A
Abstract: AN9321 ISL9N312ASK8T MS-012AA TB334
Text: ISL9N312ASK8T Data Sheet 30V, 0.012 Ohm, 11A, N-Channel Logic Level UltraFET Trench Power MOSFETs March 2001 File Number 5034 PWM Optimized [ /Title This device employs a new advanced trench MOSFET ISL9 technology and features low gate charge while maintaining
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ISL9N312ASK8T
N312A
ISL9N312ASK8
AN9321
ISL9N312ASK8T
MS-012AA
TB334
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M043 Diode
Abstract: No abstract text available
Text: ISL9N316AD3ST TM Data Sheet January 2001 File Number 30V, 0.0155 Ohm, 48A, N-Channel Logic Level UltraFET Trench Power MOSFETs This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. 5025
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ISL9N316AD3ST
1450pF
M043 Diode
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FST8360SL
Abstract: No abstract text available
Text: MCC FST8360SL omponents 21201 Itasca Street Chatsworth !"# $ % !"# THRU FST83100SL Features • • • • 80 Amp Schottky Barrier Rectifier 60 to 100 Volts Metal of siliconrectifier, majonty carrier conducton
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FST8360SL
FST83100SL
FST8380SL
FST8360SL
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N316AD
Abstract: ISL9N316AD3ST 8E11
Text: ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs General Description Features This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance. • Fast switching
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ISL9N316AD3ST
1450pF
O-252
N316AD
ISL9N316AD3ST
8E11
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