ATP108
Abstract: IT1518 ena1604
Text: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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ATP108
ENA1604
PW10s)
PW10s,
A1604-4/4
ATP108
IT1518
ena1604
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BCM56800
Abstract: XAUI rdbgc0 LFE2M50E TN1188 bcm5680 bcm pause frame BCM 10G BCM0 SFP EVALUATION BOARD 10G
Text: LatticeECP2M Broadcom XAUI 10 Gbps Physical Layer Interoperability Over CX-4 November 2009 Technical Note TN1188 Introduction This technical note describes a physical layer 10 Gigabit Ethernet XAUI 10 Gbps interoperability test between a LatticeECP2M device and the Broadcom BCM56800 network switch. The test was limited to the physical layer
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TN1188
BCM56800
1-800-LATTICE
XAUI
rdbgc0
LFE2M50E
TN1188
bcm5680
bcm pause frame
BCM 10G
BCM0
SFP EVALUATION BOARD 10G
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Untitled
Abstract: No abstract text available
Text: ATP108 Ordering number : ENA1604A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ATP108 General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive
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ATP108
ENA1604A
A1604-7/7
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Untitled
Abstract: No abstract text available
Text: ATP108 Ordering number : ENA1604 SANYO Semiconductors DATA SHEET ATP108 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • • Low ON-resistance. Large current. Slim package. 4.5V drive. Halogen free compliance.
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Original
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PDF
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ENA1604
ATP108
PW10s)
PW10s,
--15V,
A1604-4/4
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h945
Abstract: H944 transistor h945 h965 h946 H948 IR1518 BCM56800 h945 transistor H808
Text: LatticeECP3 and Broadcom 10 Gbps Physical/MAC Layer Interoperability July 2010 Technical Note TN1218 Introduction This technical note describes a Physical/MAC layer 10-Gigabit Ethernet interoperability test between a LatticeECP3 device and the Broadcom BCM56800 network switch. The test exercises the Physical/MAC layer
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TN1218
10-Gigabit
BCM56800
h945
H944
transistor h945
h965
h946
H948
IR1518
h945 transistor
H808
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1604A ATP108 P-Channel Power MOSFET http://onsemi.com –40V, –70A, 10.4mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications
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ENA1604A
ATP108
PW10s)
PW10s,
--15V,
--35A
L100H,
A1604-7/7
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A1604-4
Abstract: ATP108
Text: ATP108 注文コード No. N A 1 6 0 4 三洋半導体データシート N ATP108 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・ 低オン抵抗。 ・ 大電流。 ・ 薄型パッケージ。
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ATP108
PW10s
IT15189
IT15188
--210A
--20V
--70A
IT15190
A1604-4
ATP108
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