ISS184
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching Diode SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃
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OT-23
1SS184
OT-23
100mA
ISS184
ISS184
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ISS184
Abstract: MARKING b3 MARKING B3 SOT-23 1SS184
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS184 Switching DIODES SOT-23 FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1.ANODE MARKING: B3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃
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Original
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PDF
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OT-23
1SS184
OT-23
100mA
ISS184
ISS184
MARKING b3
MARKING B3 SOT-23
1SS184
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ISS226
Abstract: ISS184 ISV128 fet 2sK161 Low frequency amplifier ISV99 2SK117 2SK30ATM 2sk241 mos fet ISS181
Text: Sb TOSHIBA íDISCRET E/O PTO> 9097250 '•i, D I S C R E T E / OPTO _ 5bC TOSHIBA Di f1| c] 0 ci 7 e S D 07 103 □□□71D3 D 0 3 - ° ^ .c; . V FET - _ A p plication Typ e Low frequency amplifier Low noise low 2SK 209 frequency amplifier FM R F
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1017ESD
DDD71G3
2SK208
2SK30ATM
2SK209
2SK117
2SK210
2SK192A
2SK211
2SK161
ISS226
ISS184
ISV128
fet 2sK161
Low frequency amplifier
ISV99
2SK117
2SK30ATM
2sk241 mos fet
ISS181
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