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    IS42SM Price and Stock

    Integrated Silicon Solution Inc IS42SM16160D-7TL

    IC DRAM 256MBIT PAR 54TFBGA
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    Integrated Silicon Solution Inc IS42SM16800H-75BI

    IC DRAM 128MBIT PAR 54TFBGA
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    Integrated Silicon Solution Inc IS42SM16160K-6BLI

    IC DRAM 256MBIT PAR 54TFBGA
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    Mouser Electronics IS42SM16160K-6BLI 1,153
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    Integrated Silicon Solution Inc IS42SM32800K-6BLI

    IC DRAM 256MBIT PAR 90TFBGA
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    Mouser Electronics IS42SM32800K-6BLI 183
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    Integrated Silicon Solution Inc IS42SM16160K-75BLI

    IC DRAM 256MBIT PAR 54TFBGA
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    Mouser Electronics IS42SM16160K-75BLI 368
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    Find more IS42SM price and stock on Findchips.com

    IS42SM Datasheets (114)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IS42SM16160D Integrated Silicon Solution DRAM Original PDF
    IS42SM16160D-7BL Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54TFBGA Original PDF
    IS42SM16160D-7BLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54TFBGA Original PDF
    IS42SM16160D-7BLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54TFBGA Original PDF
    IS42SM16160D-7BL-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54TFBGA Original PDF
    IS42SM16160D-7TL Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 256M PARALLEL 54TFBGA Original PDF
    IS42SM16160E Integrated Silicon Solution DRAM Original PDF
    IS42SM16160E-6BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 166MHZ 54BGA Original PDF
    IS42SM16160E-6BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 166MHZ 54BGA Original PDF
    IS42SM16160E-75BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 133MHZ 54BGA Original PDF
    IS42SM16160E-75BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 133MHZ 54BGA Original PDF
    IS42SM16160K Integrated Silicon Solution DRAM Original PDF
    IS42SM16160K-6BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 166MHZ 54BGA Original PDF
    IS42SM16160K-6BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 166MHZ 54BGA Original PDF
    IS42SM16160K-75BLI Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 133MHZ 54BGA Original PDF
    IS42SM16160K-75BLI-TR Integrated Silicon Solution Memory, Integrated Circuits (ICs), IC SDRAM 256M 133MHZ 54BGA Original PDF
    IS42SM16200C Integrated Silicon Solution DRAM Original PDF
    IS42SM16200C-75BLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 32M PARALLEL 54TFBGA Original PDF
    IS42SM16200C-75BLI-TR Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 32M PARALLEL 54TFBGA Original PDF
    IS42SM16200D-6BLI Integrated Silicon Solution Integrated Circuits (ICs) - Memory - IC DRAM 32M PARALLEL 166MHZ Original PDF

    IS42SM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SM81600E

    Abstract: IS42SM16800E IS42SM81600E IS42SM16800E-7TLI IS42SM32400E IS42SM32400E-7T IS42SM16800E-7BLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb SM81600E IS42SM16800E-7TLI IS42SM32400E-7T IS42SM16800E-7BLI PDF

    SM32200K

    Abstract: IS42SM32200K
    Text: IS42SM/RM/VM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 200K-6BLI IS42SM32200K-75BLI 90-ball -40oC 2Mx32 IS42RM32200K-6BLI SM32200K IS42SM32200K PDF

    IS42SM16800F-75BLI

    Abstract: IS42SM16800F
    Text: IS42SM16800F Preliminary Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


    Original     		IS42SM16800F 16Bits IS42SM16800F -40oC 8Mx16 IS42SM16800F-75BLI 54-ball IS42SM16800F-75BLI PDF

    IS42SM16800E-6BLI

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM DECEMBER 2010 DESCRIPTION FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42SM16800E-6BLI PDF

    16MX32

    Abstract: IS42RM32160C
    Text: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full


    Original     		IS42SM32160C IS42RM32160C 16Mx32 512Mb IS42SM/RM32160C IS42SM32160C-7BLI IS42SM32160C-75EBLI 8x13mm IS42RM32160C PDF

    IS42SM16400K

    Abstract: No abstract text available
    Text: I S42SM/ RM/ VM16400K 1M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/ VM16400K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,567 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		S42SM/ VM16400K 16Bits IS42SM/RM/ VM16400K L6400K-6BLI 54-ball IS42SM16400K-75BLI 4Mx16 IS42SM16400K PDF

    Untitled

    Abstract: No abstract text available
    Text: I S42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		S42SM16400G 16Bits IS42SM16400G 4Mx16 IS42SM16400G-6BLI 54-ball IS42SM16400G-75BLI PDF

    IS42S16160B(D)-7TL

    Abstract: No abstract text available
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM APRIL 2011 FEATURES DESCRIPTION • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42S16160B(D)-7TL PDF

    IS42RM32800D

    Abstract: No abstract text available
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 •฀ Fully synchronous; all signals referenced to a positive clock edge •฀ Internal bank for hiding row access and precharge


    Original     		IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42RM32800D PDF

    IS42SM16400G

    Abstract: 42SM16400G IS42SM16400G-75BLI
    Text: IS42SM16400G 1M x 16Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM16400G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM16400G 16Bits IS42SM16400G -40oC 4Mx16 IS42SM16400G-6BLI 54-ball IS42SM16400G-75BLI 42SM16400G IS42SM16400G-75BLI PDF

    IS42SM16800F

    Abstract: 42SM16800F IS42SM16800F-75BLI
    Text: IS42SM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM16800F 16Bits IS42SM16800F -40oC 8Mx16 IS42SM16800F-75BLI 54-ball 42SM16800F IS42SM16800F-75BLI PDF

    IS42SM32200K

    Abstract: No abstract text available
    Text: IS42SM/RM/VM32200K Preliminary Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K 90-ball -40oC 2Mx32 IS42RM32200K-6BLI IS42RM32200K-75BLI IS42SM32200K PDF

    IS42SM32400E

    Abstract: ACT1010 IS42SM81600E-7TLI MO-207 IS42SM16800E IS42RM81600E IS42SM16800E-6TLI
    Text: IS42SM81600E / IS42SM16800E / IS42SM32400E IS42RM81600E / IS42RM16800E / IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES Advanced Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM81600E IS42SM16800E IS42SM32400E IS42RM81600E IS42RM16800E IS42RM32400E 16Mx8, 8Mx16, 4Mx32 128Mb IS42SM32400E ACT1010 IS42SM81600E-7TLI MO-207 IS42SM16800E-6TLI PDF

    IS42RM32800D

    Abstract: No abstract text available
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Advanced Information JUNE 2008 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42RM32800D PDF

    SM16200C

    Abstract: No abstract text available
    Text: IS42SM16200C IS42RM16200C IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C -40oC 2Mx16 IS42VM16200C-6BLI IS42VM16200C-75BLI 54-ball SM16200C PDF

    is42sm32160c-75bl

    Abstract: IS42SM32160C-7BL IS42RM32160C
    Text: IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full


    Original     		IS42SM32160C IS42RM32160C 16Mx32 512Mb IS42SM/RM32160C IS42SM32160C-7BLI IS42SM32160C-75BLI 8x13mm is42sm32160c-75bl IS42SM32160C-7BL IS42RM32160C PDF

    IS42SM32200G

    Abstract: 42SM32200G
    Text: IS42SM32200G 512K x 32Bits x 4Banks Low Power Synchronous DRAM Description These IS42SM32200G are Low Power 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM32200G 32Bits IS42SM32200G MO-207 -40oC 2Mx32 IS42SM32200G-6BLI 90-ball 42SM32200G PDF

    IS42SM16800F

    Abstract: No abstract text available
    Text: IS42SM16800F Advanced Information 2M x 16Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM16800F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 2,097,152 words x 16 bits. These products are offering fully synchronous operation and are


    Original     		IS42SM16800F 16Bits IS42SM16800F 54Ball -25oC 8Mx16 IS42SM16800F-6BLE IS42SM16800F-75BLE PDF

    IS42SM32400F

    Abstract: No abstract text available
    Text: IS42SM32400F Advanced Information 1M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM32400F are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. These products are offering fully synchronous operation and are


    Original     		IS42SM32400F 32Bits IS42SM32400F 90Ball -25oC 4Mx32 IS42SM32400F-6BLE IS42SM32400F-75BLE PDF

    SM83200D

    Abstract: IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM83200D IS42SM32800D IS42SM16160D-7BLI M3100
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES OCTOBER 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb SM83200D IS42RM32800D IS42SM16160D-7BL IS42RM16160D-7BLI IS42SM32800D IS42SM16160D-7BLI M3100 PDF

    IS42SM32200K

    Abstract: No abstract text available
    Text: IS42SM/RM/VM32200K Advanced Information 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200K are mobile 67,108,864 bits CMOS Synchronous DRAM organized as 4 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are


    Original     		IS42SM/RM/VM32200K 32Bits IS42SM/RM/VM32200K -40oC 4Mx32 IS42SM32200K-6BLI IS42SM32200K-75BLI 90-ball IS42SM32200K PDF

    IS42RM32800D

    Abstract: TSOP II 54 IS42SM32800d IS42SM83200D
    Text: IS42SM83200D / IS42SM16160D / IS42SM32800D IS42RM83200D / IS42RM16160D / IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb Mobile Synchronous DRAM FEATURES Preliminary Information FEBRUARY 2009 • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and precharge


    Original     		IS42SM83200D IS42SM16160D IS42SM32800D IS42RM83200D IS42RM16160D IS42RM32800D 32Mx8, 16Mx16, 8Mx32 256Mb IS42RM32800D TSOP II 54 IS42SM32800d PDF

    IS42SM16200C

    Abstract: IS42SM
    Text: IS42SM16200C IS42RM16200C IS42VM16200C Advanced Information 1M x 16Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM16200C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 1,048,576 words x 16 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		IS42SM16200C IS42RM16200C IS42VM16200C 16Bits IS42SM/RM/VM16200C IS42VM16200C-6BLI 54-ball IS42VM16200C-75BLI -40oC IS42SM16200C IS42SM PDF

    IS42RM32100C

    Abstract: IS42RM32100C-75BLI IS42SM32100C
    Text: IS42SM32100C IS42RM32100C IS42VM32100C Advanced Information 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,432 bits CMOS Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs


    Original     		IS42SM32100C IS42RM32100C IS42VM32100C 32Bits IS42SM/RM/VM32100C IS42VM32100C-6BLI 90-ball IS42VM32100C-75BLI -40oC IS42RM32100C IS42RM32100C-75BLI IS42SM32100C PDF