IRL630
Abstract: No abstract text available
Text: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL630/IRL631
O-220
IRL630
IRL631
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1XYS
Abstract: 1RL630 1rlz44 IRLZ20 1RFZ40 IRFZ35 IRFZ42 IRFZ44 IRH254 IRL510
Text: - M € tí: f ft * t Vds or Vd g € £ fê Vg s Ta=25^ Id Pd * /CH * /CH IGSS V g s th) IDSS ft % Bg. Id (tnA) Coss Crss ft & m % Vg s =0 (max) ♦ t y p Vg s (V) (0) max Ciss *typ (A) Id (A) *typ (S) (*typ) (*typ) (*typ) (max) (max) (max) (pF) (pF) (pF)
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Ta-25Â
IRFZ35
O-220AB
1RFZ40
IRFZ42
SSH6N70A
SSH7N12
SSH7N15
SSH8N12
1XYS
1RL630
1rlz44
IRLZ20
IRFZ44
IRH254
IRL510
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IRLZ14
Abstract: IRLZ24 50N05l irl530 IRL511
Text: FUNCTION GUIDE POWER MOSFETs LOGIC LEVEL SFET TO-220 N-CHANNEL BVdss V ID(on)(A) RDS(on)( Q) Part Number 50.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07 0.04 0.022 IRLZ10 IRLZ20 IRLZ30 IR LZ 40 SSP 50N 05L 60.00 8.00 15.00 25.00 35.00 50.00 0.30 0.15 0.07
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O-220
IRLZ10
IRLZ20
IRLZ30
IRLZ14
IRLZ24
IRLZ34
IRLZ44
SP50N
IRL511
50N05l
irl530
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IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Text: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF
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2N3904
2N3906
2N4401
2N4403
2N5087
2N5088
2N5551
2N6515
KSP06
KSP10
IRF9210
darlington NPN 600V 8a transistor
fet 10a 600v
darlington NPN 600V 12a transistor
transistor IRF9640
N-CH POWER MOSFET TO-92
600v 12A TO220F
NPN Transistor 600V 5A TO-220
transistor irf620
KSH117-1
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250M
Abstract: IRL630 IRL631
Text: N-CHANNEL LOGIC LEVEL MOSFETS IRL630/631 FEATURES • Lower Rds ON • • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability
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IRL630/631
O-220
IRL630
IRL631
250M
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IRLZ20
Abstract: 1rlz44 1RL640 SSH3N70 SSH5N40 SSH6N70A IRL631 IRL641 IRLZ10 IRLZ24
Text: - 1§y £ *± n 13=25*0 f Vds Vg s Id Ig s s Pt> V g s th ID SS * * hDs(on) Vd s = ft ft Vdg ♦ /CH (V) (A) (V) * /CH Vg s Vd s (V) (V) (nA) m (UA) min ma x (V) (V) Id (on) g fs Uss lo s s Crss (*typ) (*typ) (max) (max) (pF) (pF) (*typ) (max) (pF) V g s =0
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Ta-25Â
1RL630
T0-220
IRL631
1RL640
O-220
IRL641
IRLZ10
IRLZ20
1rlz44
SSH3N70
SSH5N40
SSH6N70A
IRLZ24
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IRLSZ14
Abstract: SSS50N06
Text: FUNCTION GUIDE MOSFETs TO-220 N-CHANNEL LOGIC LEVEL FET (Continued) BVoss(V) lo(on)(A) Ros(on)(Q) FWjc(K/W) PofWatt) Page IRL510 IRL520 IRL530 IRL540 '0 0 4.00 7.90 13.00 24.00 0.750 0.400 0.200 0.110 5.00 3.00 1.70 1.00 25 42 75 125 872 877 882 887 IRL611
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O-220
IRL510
IRL520
IRL530
IRL540
IRL611
IRL621
IRL631
IRL641
IRL610
IRLSZ14
SSS50N06
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IRF615
Abstract: No abstract text available
Text: FUNCTION GUIDE POWER MOSFETs TO-220 NCHANNEL Continued BVdss(V) ID(onXA) RDS(onXQ) Part Number 150.00 2.00 2.60 3.30 4.00 4.00 5.00 8.00 8.00 9.00 16.00 16.00 18.00 2.40 2.40 1.50 1.20 1.20 0.80 0.60 0.60 0.40 0.22 0.22 0.18 IRL611 IRF613 IRF611 IRL621 IRF623
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O-220
IRL611
IRF613
IRF611
IRL621
IRF623
IRF621
IRL631
IRF633
IRF631
IRF615
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