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    IRL630 Search Results

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    IRL630 Price and Stock

    Vishay Siliconix IRL630SPBF

    MOSFET N-CH 200V 9A D2PAK
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    DigiKey IRL630SPBF Tube 3,884 1
    • 1 $2.77
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    • 100 $2.77
    • 1000 $1.0625
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    Quest Components IRL630SPBF 28
    • 1 $1.75
    • 10 $1.61
    • 100 $1.4
    • 1000 $1.4
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    Vishay Siliconix IRL630PBF-BE3

    MOSFET N-CH 200V 9A TO220AB
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    DigiKey IRL630PBF-BE3 Tube 1,000 1
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    Vishay Siliconix IRL630PBF

    MOSFET N-CH 200V 9A TO220AB
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    DigiKey IRL630PBF Tube 637 1
    • 1 $2.54
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    • 100 $2.54
    • 1000 $1.03086
    • 10000 $1.03086
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    Vishay Siliconix IRL630

    MOSFET N-CH 200V 9A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
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    onsemi IRL630A

    MOSFET N-CH 200V 9A TO220-3
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    Find more IRL630 price and stock on Findchips.com

    IRL630 Datasheets (33)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRL630 International Rectifier HEXFET Power Mosfet Original PDF
    IRL630 International Rectifier HEXFET Power MOSFET Original PDF
    IRL630 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL630 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF
    IRL630 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL630 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 200V, 9A, Pkg Style TO-220AB Scan PDF
    IRL630 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL630 Unknown FET Data Book Scan PDF
    IRL630 Samsung Electronics N-Channel Logic Level MOSFETS Scan PDF
    IRL630A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRL630A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL630A_NL Fairchild Semiconductor 200V N-Channel Logic Level A-FET / Substitute of IRL630 Original PDF
    IRL630L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL630PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRL630PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A TO-220AB Original PDF
    IRL630PBF-BE3 Vishay Siliconix MOSFET N-CH 200V 9A TO220AB Original PDF
    IRL630S International Rectifier HEXFET Power MOSFET Original PDF
    IRL630S International Rectifier HEXFET Power Mosfet Original PDF
    IRL630S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL630S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 9A D2PAK Original PDF

    IRL630 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL630S_RC, SiHL630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL630S SiHL630S AN609, 1561m 1405m 7558m 9961m 8166m

    Untitled

    Abstract: No abstract text available
    Text: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original     		PDF IRL630 O-220 08-Mar-07

    IRF1010

    Abstract: IRL630
    Text: Previous Datasheet Index Next Data Sheet PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V


    Original     		PDF IRL630 O-220 a9246 IRF1010 IRL630

    IRL630A

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL630A FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original     		PDF IRL630A O-220 IRL630A

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D TO-220AB Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 O-220AB 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRL630S, SiHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive


    Original     		PDF IRL630S, SiHL630S 2002/95/EC O-263) 11-Mar-11

    IRF1010

    Abstract: IRL630
    Text: PD -9.1255 IRL630 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V 150°C Operating Temperature Fast Switching Ease of paralleling VDSS = 200V RDS(on) = 0.40 Ω ID = 9.0A Description


    Original     		PDF IRL630 O-220 IRF1010 IRF1010 IRL630

    Untitled

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL630 FEATURES BVDSS = 200 V ♦ Logic-Level Gate Drive ♦ Avalanche Rugged Technology RDS(on) = 0.4Ω ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ID = 9 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    Original     		PDF IRL630 O-220

    AN-994

    Abstract: IRL630S SMD-220
    Text: PD - 9.1254 IRL630S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at VGS = 4V & 5V 150°C Operating Temperature VDSS = 200V RDS(on) = 0.40Ω ID = 9.0A


    Original     		PDF IRL630S SMD-220 12-Mar-07 AN-994 IRL630S

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    IRL630

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRL630

    Untitled

    Abstract: No abstract text available
    Text: PD- 95590 IRL630SPbF • Lead-Free Document Number: 91304 07/20/04 www.vishay.com 1 IRL630SPbF Document Number: 91304 www.vishay.com 2 IRL630SPbF Document Number: 91304 www.vishay.com 3 IRL630SPbF Document Number: 91304 www.vishay.com 4 IRL630SPbF Document Number: 91304


    Original     		PDF IRL630SPbF 12-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: PD- 95756 IRL630PbF • Lead-Free Document Number: 91303 8/24/04 www.vishay.com 1 IRL630PbF Document Number: 91303 www.vishay.com 2 IRL630PbF Document Number: 91303 www.vishay.com 3 IRL630PbF Document Number: 91303 www.vishay.com 4 IRL630PbF Document Number: 91303


    Original     		PDF IRL630PbF O-220AB 12-Mar-07

    SiHL630S

    Abstract: No abstract text available
    Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL630S, SIHL630S SMD-220 18-Jul-08 SiHL630S

    Untitled

    Abstract: No abstract text available
    Text: IRL630, SiHL630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 V RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D Dynamic dV/dt Rating Repetitive Avalanche Rated


    Original     		PDF IRL630, SiHL630 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SIHL630S

    Abstract: IRL630S SiHL630S-E3
    Text: IRL630S, SIHL630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 5 V 0.40 Qg (Max.) (nC) 40 Qgs (nC) 5.5 Qgd (nC) 24 Configuration Single D • • • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL630S, SIHL630S O-263) 18-Jul-08 SIHL630S IRL630S SiHL630S-E3

    Untitled

    Abstract: No abstract text available
    Text: IRL630A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level Gate Drive 0.4Q CO > a ♦ Rugged Gate Oxide Technology II ^DS on = ♦ Avalanche Rugged Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL630A O-220

    Untitled

    Abstract: No abstract text available
    Text: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O


    OCR Scan     		PDF IRL630A 003b32fl O-220 7Tb4142 DD3b33D

    IRL630

    Abstract: No abstract text available
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRL630/IRL631 FEATURES • L o w e r R d s ON • • • • • • Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRL630/IRL631 O-220 IRL630 IRL631

    Untitled

    Abstract: No abstract text available
    Text: IRL630 A d v a n c e d Power MOSFET FEATURES 200 V 0.4Q > Rugged G ate O xide T e ch n o lo g y CO ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		PDF IRL630 O-220

    IRL630S

    Abstract: Diode 3D 54
    Text: IRL630S A dvanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^D S o n = ♦ Lower Input Capacitance lD = 9 A 200 V 0.4Î2 ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL630S IRL630S Diode 3D 54

    IRL630A

    Abstract: diode rg62 018
    Text: IRL630A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.4Î2 ♦ Rugged Gate Oxide Technology lD = 9 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL630A IRL630A diode rg62 018

    1RL630A

    Abstract: IRL630
    Text: IRL630A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ ■ BVDSs Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 m A M ax. @ VDS= 200V


    OCR Scan     		PDF IRL630A O-220 1RL630A IRL630