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    IRL620 Price and Stock

    Vishay Siliconix IRL620PBF

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620PBF Tube 1,176 1
    • 1 $1.73
    • 10 $1.73
    • 100 $1.1423
    • 1000 $0.82012
    • 10000 $0.725
    		Buy Now
    Quest Components IRL620PBF 320
    • 1 $2.64
    • 10 $2.64
    • 100 $2.64
    • 1000 $1.221
    • 10000 $1.221
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    IRL620PBF 88
    • 1 $3.52
    • 10 $3.52
    • 100 $1.76
    • 1000 $1.76
    • 10000 $1.76
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    Vishay Siliconix IRL620SPBF

    MOSFET N-CH 200V 5.2A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620SPBF Tube 465 1
    • 1 $2.05
    • 10 $2.05
    • 100 $1.357
    • 1000 $1.357
    • 10000 $1.357
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    Vishay Siliconix IRL620STRLPBF

    MOSFET N-CH 200V 5.2A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620STRLPBF Cut Tape 130 1
    • 1 $2.05
    • 10 $1.705
    • 100 $1.357
    • 1000 $1.357
    • 10000 $1.357
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    IRL620STRLPBF Reel 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.14821
    • 10000 $0.89074
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    IRL620STRLPBF Digi-Reel 1
    • 1 $2.05
    • 10 $1.705
    • 100 $1.357
    • 1000 $1.357
    • 10000 $1.357
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    Vishay Siliconix IRL620PBF-BE3

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620PBF-BE3 Tube 80 1
    • 1 $1.73
    • 10 $1.73
    • 100 $1.3884
    • 1000 $1.3884
    • 10000 $1.3884
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    Vishay Siliconix IRL620

    MOSFET N-CH 200V 5.2A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620 Tube
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    Find more IRL620 price and stock on Findchips.com

    IRL620 Datasheets (29)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRL620 International Rectifier HEXFET Power Mosfet Original PDF
    IRL620 International Rectifier HEXFET Power MOSFET Original PDF
    IRL620 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL620 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A TO-220AB Original PDF
    IRL620 Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL620 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL620 Unknown FET Data Book Scan PDF
    IRL620 Samsung Electronics N-Channel Logic Level MOSFETS Scan PDF
    IRL620A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRL620A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL620L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL620PBF International Rectifier HEXFET POWER MOSFET Original PDF
    IRL620PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A TO-220AB Original PDF
    IRL620PBF-BE3 Vishay Siliconix MOSFET N-CH 200V 5.2A TO220AB Original PDF
    IRL620S International Rectifier HEXFET Power MOSFET Original PDF
    IRL620S International Rectifier HEXFET Power Mosfet Original PDF
    IRL620S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL620S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL620S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRL620 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRL620

    Abstract: SiHL620 SiHL620-E3 IRL620PBF
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11 IRL620 SiHL620-E3 IRL620PBF

    SMD-220

    Abstract: smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220
    Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRL620S SMD-220 interna-220 SMD-220 smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220

    SiHL620

    Abstract: SiHL620-E3 IRL620PBF IRL620
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 16 Qgs (nC) 2.7 Qgd (nC) 9.6 Configuration • Repetitive Avalanche Rated 0.80 Available • Logic-Level Gate Drive


    Original     		PDF IRL620, SiHL620 O-220 O-220 18-Jul-08 SiHL620-E3 IRL620PBF IRL620

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRL620, SiHL620 2002/95/EC O-220AB O-220AB 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: PD- 95670 IRL620PbF • Lead-Free www.irf.com 1 8/2/04 IRL620PbF 2 www.irf.com IRL620PbF www.irf.com 3 IRL620PbF 4 www.irf.com IRL620PbF www.irf.com 5 IRL620PbF 6 www.irf.com IRL620PbF www.irf.com 7 IRL620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches


    Original     		PDF IRL620PbF O-220AB O-220AB.

    DIODE smd marking 52A

    Abstract: No abstract text available
    Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRL620S SMD-220 08-Mar-07 DIODE smd marking 52A

    DIODE smd marking 52A

    Abstract: smd diode marking 12c smd diode 2F SMD-220 SMD tr 2f smd marking KH smd diode marking 20W smd220 AN-994 IRL620S
    Text: Previous Datasheet Index Next Data Sheet PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω


    Original     		PDF IRL620S SMD-220 DIODE smd marking 52A smd diode marking 12c smd diode 2F SMD tr 2f smd marking KH smd diode marking 20W smd220 AN-994 IRL620S

    IRL620

    Abstract: No abstract text available
    Text: Previous Datasheet Index Next Data Sheet PD -9.1217 IRL620 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS ON Specified at V GS = 4V & 5V Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 200V


    Original     		PDF IRL620 O-220 O-220AB IRL620

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 18-Jul-08

    IRL620S

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL620S FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    Original     		PDF IRL620S IRL620S

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRL620, SiHL620 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 5.0 V Qg (Max.) (nC) 2.7 Qgd (nC) 9.6 Configuration RoHS* • Logic-Level Gate Drive 16 Qgs (nC) Available • Repetitive Avalanche Rated


    Original     		PDF IRL620, SiHL620 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: PD- 95670 IRL620PbF • Lead-Free 1 IRL620PbF 2 IRL620PbF TO-220AB Package Outline Dimensions are shown in millimeters inches 2.87 (.113) 2.62 (.103) 10.54 (.415) 10.29 (.405) -B- 3.78 (.149) 3.54 (.139) 4.69 (.185) 4.20 (.165) -A- 1.32 (.052) 1.22 (.048)


    Original     		PDF IRL620PbF O-220AB O-220AB.

    Untitled

    Abstract: No abstract text available
    Text: IRL620 A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology o II ♦ Rugged Gate Oxide Technology cn > ♦ Logic-Level Gate Drive ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620

    IRL620

    Abstract: DDEC144 DS-10 IRL621 diode DS10
    Text: N-CHANNEL LOGIC LEVEL MOSFETS IRL620/621 FEATURES • • • • • • • • Lower R ds ON Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRL620/621 O-220 O-220 IRL620 IRL621 71bm4B DDEC144Ã DDEC144 DS-10 diode DS10

    T518

    Abstract: No abstract text available
    Text: IRL620 A d van ced Power MOSFET FEATURES 200 V 0.8Q > Rugged G ate O xide T e ch n o lo g y cn ^D S o n = a ♦ = Logic-Level G ate Drive ♦ A va la n ch e Rugged T e ch n o lo g y II ♦ BVdss ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		PDF IRL620 O-220 T518

    Untitled

    Abstract: No abstract text available
    Text: IRL620A Advanced Power MOSFET FEATURES B ^D S S • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^D S on = ■ Lower Leakage Current : 10 m A (M ax.) @ VDS = 200V ■ Lower ROS<ON) : 0.609£2 (Typ.)


    OCR Scan     		PDF IRL620A

    Untitled

    Abstract: No abstract text available
    Text: IRL620A A d van ced Power MOSFET FEATURES BVdss = 200 V ♦ Logic-Level G ate Drive 0.8Q > cn Rugged G ate O xide T e ch n o lo g y a ♦ II ^D S o n = ♦ A va la n ch e Rugged T e ch n o lo g y ♦ Lo w e r Input C a pa citance ♦ Im proved G ate C harge


    OCR Scan     		PDF IRL620A O-220

    ifr 350 mosfet

    Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
    Text: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)


    OCR Scan     		PDF IRL620A O-220 003T14ti 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D ifr 350 mosfet IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet

    IRF MOSFET 100A 200v

    Abstract: IRL620A
    Text: IRL620A A d vanced Power MOSFET FEATURES BVDSS — ♦ Avalanche Rugged Technology ^DS on = 0.8Î2 ♦ Rugged Gate Oxide Technology lD = 5 A ♦ Logic-Level Gate Drive 200 V ♦ Lower Input Capacitance ♦ Improved Gate Charge TO-220 ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620A IRF MOSFET 100A 200v IRL620A

    Untitled

    Abstract: No abstract text available
    Text: IRL620A A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 ♦ Avalanche Rugged Technology o II ♦ Rugged Gate Oxide Technology cn > ♦ Logic-Level Gate Drive ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area


    OCR Scan     		PDF IRL620A

    Untitled

    Abstract: No abstract text available
    Text: International PD91217 liS Rectifier_ IRL620 HEXFET Power M O S F E T • Dynamic dv/dt Rating • Repetitive Avalanche Rated • Logic-Level Gate Drive • R d s ON Specified at V q s = 4V & 5V • Fast Switching • Ease of paralleling • Simple Drive Requirements


    OCR Scan     		PDF IRL620