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    IRL620S Price and Stock

    Vishay Siliconix IRL620SPBF

    MOSFET N-CH 200V 5.2A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRL620SPBF Tube 465 1
    • 1 $2.05
    • 10 $2.05
    • 100 $1.357
    • 1000 $1.357
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    Vishay Siliconix IRL620STRLPBF

    MOSFET N-CH 200V 5.2A D2PAK
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    DigiKey IRL620STRLPBF Cut Tape 130 1
    • 1 $2.05
    • 10 $1.705
    • 100 $1.357
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    IRL620STRLPBF Reel 800
    • 1 -
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    • 1000 $1.14821
    • 10000 $0.89074
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    IRL620STRLPBF Digi-Reel 1
    • 1 $2.05
    • 10 $1.705
    • 100 $1.357
    • 1000 $1.357
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    Vishay Siliconix IRL620S

    MOSFET N-CH 200V 5.2A D2PAK
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    DigiKey IRL620S Tube
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    Vishay Intertechnologies IRL620STRLPBF

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRL620STRLPBF)
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    Avnet Americas IRL620STRLPBF Reel 800
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    EBV Elektronik IRL620STRLPBF 13 Weeks 800
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    Vishay Intertechnologies IRL620SPBF

    LOGIC MOSFET N-CHANNEL 200V - Tape and Reel (Alt: IRL620SPBF)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas IRL620SPBF Reel 1,000
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    • 1000 $0.9021
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    Newark IRL620SPBF Bulk 74 1
    • 1 $2.14
    • 10 $1.74
    • 100 $1.45
    • 1000 $1.23
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    IRL620SPBF Bulk 1,000
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    • 1000 $1.33
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    TTI IRL620SPBF Tube 1,000
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    • 1000 $0.93
    • 10000 $0.87
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    TME IRL620SPBF 1
    • 1 $1.04
    • 10 $0.94
    • 100 $0.83
    • 1000 $0.7
    • 10000 $0.7
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    EBV Elektronik IRL620SPBF 13 Weeks 50
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    New Advantage Corporation IRL620SPBF 650 1
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    Find more IRL620S price and stock on Findchips.com

    IRL620S Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRL620S International Rectifier HEXFET Power MOSFET Original PDF
    IRL620S International Rectifier HEXFET Power Mosfet Original PDF
    IRL620S Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRL620S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620S Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRL620S Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL620SPBF International Rectifier HEXFET Power MOSFET Original PDF
    IRL620SPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620STRL International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRL620STRL Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620STRL Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRL620STRLPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620STRR International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original PDF
    IRL620STRR Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 5.2A D2PAK Original PDF
    IRL620STRR Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    IRL620S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SMD-220

    Abstract: smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220
    Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRL620S SMD-220 interna-220 SMD-220 smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220

    DIODE smd marking 52A

    Abstract: No abstract text available
    Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRL620S SMD-220 08-Mar-07 DIODE smd marking 52A

    DIODE smd marking 52A

    Abstract: smd diode marking 12c smd diode 2F SMD-220 SMD tr 2f smd marking KH smd diode marking 20W smd220 AN-994 IRL620S
    Text: Previous Datasheet Index Next Data Sheet PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω


    Original     		PDF IRL620S SMD-220 DIODE smd marking 52A smd diode marking 12c smd diode 2F SMD tr 2f smd marking KH smd diode marking 20W smd220 AN-994 IRL620S

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S O-263) 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 18-Jul-08

    IRL620S

    Abstract: No abstract text available
    Text: $GYDQFHG 3RZHU 026 7 IRL620S FEATURES BVDSS = 200 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.8Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 5 A ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    Original     		PDF IRL620S IRL620S

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		PDF IRL620S, SiHL620S 2002/95/EC O-263) 11-Mar-11

    SiHL620S

    Abstract: 52a21
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL620S, SiHL620S SMD-220 12-Mar-07 52a21

    Untitled

    Abstract: No abstract text available
    Text: PD- 95591 IRL620SPbF • Lead-Free www.irf.com 1 07/21/04 IRL620SPbF 2 www.irf.com IRL620SPbF www.irf.com 3 IRL620SPbF 4 www.irf.com IRL620SPbF www.irf.com 5 IRL620SPbF 6 www.irf.com IRL620SPbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


    Original     		PDF IRL620SPbF EIA-418.

    SiHL620S

    Abstract: IRL620S SiHL620S-E3
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single D D2PAK (TO-263) • • • • • • • • Surface Mount Available in Tape and Reel


    Original     		PDF IRL620S, SiHL620S O-263) 18-Jul-08 IRL620S SiHL620S-E3

    smd diode marking JC

    Abstract: AN-994 IRL620S SMD-220
    Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer


    Original     		PDF IRL620S SMD-220 12-Mar-07 smd diode marking JC AN-994 IRL620S

    Untitled

    Abstract: No abstract text available
    Text: IRL620S_RC, SiHL620S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRL620S SiHL620S AN609, CONFIGURAp-10 5704m 0740m 9202m 5574m

    SiHL620S

    Abstract: IRL620S SiH530S-E3 SiH530STR SMD-220 IRL530STRR SMD DIODE marking AB
    Text: IRL620S, SiHL620S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.80 16 Qgs (nC) 2.9 Qgd (nC) 9.6 Configuration Single • • • • • • Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		PDF IRL620S, SiHL620S SMD-220 SMD-220 18-Jul-08 IRL620S SiH530S-E3 SiH530STR IRL530STRR SMD DIODE marking AB

    Untitled

    Abstract: No abstract text available
    Text: PD- 95591 IRL620SPbF • Lead-Free Document Number: 91302 07/21/04 www.vishay.com 1 IRL620SPbF Document Number: 91302 www.vishay.com 2 IRL620SPbF Document Number: 91302 www.vishay.com 3 IRL620SPbF Document Number: 91302 www.vishay.com 4 IRL620SPbF Document Number: 91302


    Original     		PDF IRL620SPbF 12-Mar-07

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


    Original     		PDF OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		PDF GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    Untitled

    Abstract: No abstract text available
    Text: IRL620S Advanced Power MOSFET FEATURES B ^D S S - 200 V ♦ Avalanche Rugged Technology 0 .8 Q > II a ♦ Lower Input Capacitance cn ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area D2-PAK ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL620S

    IRF MOSFET driver

    Abstract: IRL620S IRF MOSFET 100A 200v MOSFET 150 N IRF
    Text: IRL620S A dvanced Power MOSFET FEATURES B V DSS — 2 0 0 V ♦ Avalanche Rugged Technology ^D S o n = ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 0 .8 Î2 5 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL620S IRF MOSFET driver IRL620S IRF MOSFET 100A 200v MOSFET 150 N IRF

    Untitled

    Abstract: No abstract text available
    Text: IRL620S A d van ced Power MOSFET FEATURES B V DSS - 200 V ^D S o n = 0 .8 Î2 o II ♦ Lower Input Capacitance > ♦ Rugged Gate Oxide Technology cn ♦ Avalanche Rugged Technology ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ 150°C Operating Temperature


    OCR Scan     		PDF IRL620S