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    Untitled

    Abstract: No abstract text available
    Text: IRF520A Advanced Power MOSFET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ^DS on = 0.2Í2 lD = 9-2 A ■ 175°C Operating Temperature


    OCR Scan     		IRF520A QQ3b32fl 3b32ti O-220 7Tb4142 DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF510A Advanced Power MOSFET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V


    OCR Scan     		IRF510A QQ3b32fl O-220 00M1N PDF

    JB 2256

    Abstract: IRF540A irf540a mosfet R/Detector/"detect18+ic"/"CD"/JB 2256
    Text: IRF540A Advanced Power MOSEET FEATURES BVDSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 H A Max. @ V DS= 1 0 0 V


    OCR Scan     		irf540a 30-OTO T0-220 QQ3b32fl O-220 500MIN 7Tb414E DD3b33D JB 2256 IRF540A irf540a mosfet R/Detector/"detect18+ic"/"CD"/JB 2256 PDF

    irf610a

    Abstract: No abstract text available
    Text: IRF610A Advanced Power MOSFET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge - ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V H Low Rds(0n) ■ 1-169 £l(Typ.)


    OCR Scan     		irf610a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF634A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 4 5 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		IRF634A QQ3b32fl O-220 PDF

    IRF620A

    Abstract: No abstract text available
    Text: IR F 620A Advanced Power MOSFET FEATURES • Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge - 200 V ^ D S o n = 0.8 Í2 o II Avalanche Rugged Technology ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V


    OCR Scan     		irf620a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF710A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 400 V ^ D S o n = 3 .6 Q lD = 2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA(M ax.) @ VDS = 400V


    OCR Scan     		irf710a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF730A A dvanced Power MOSEET FEATURES B V DSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|^A Max. @ VDS = 400V ■ Lower RDS(ON) :


    OCR Scan     		IRF730A QQ3b32fl O-220 PDF

    ld18a

    Abstract: No abstract text available
    Text: IR F640A Advanced Power MOSFET FEATURES B V DSS = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |aA (Max.) @ V DS = 200V


    OCR Scan     		F640A IRF640A QQ3b32fl O-220 7Tb4142 DD3b33D ld18a PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF630A A dvanced Power MOSEET Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge 200 V ^ D S o n = 0.4 Q. ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V H Low Rds(0n) ■ 0.333 £1 (Typ.)


    OCR Scan     		IRF630A QQ3b32fl O-220 7Tb4142 DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF550A Advanced Power MOSEET FEATURES B V DSS - 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 40 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature


    OCR Scan     		IRF550A QQ3b32fl O-220 7Tb4142 DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF830A A dvanced Power MOSEET FEATURES - 500 V ^DS on = 1.5 & B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 500V ■ Lower


    OCR Scan     		IRF830A QQ3b32fl O-220 00M1N 7Tb4142 DD3b33D PDF

    IRF654A

    Abstract: No abstract text available
    Text: IRF654A A dvanced Power MOSEET FEATURES B V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge dss = 250 V ^ D S o n = lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		irf654a 30-OTO T0-220 QQ3b32fl O-220 500MIN 7Tb414E DD3b33D IRF654A PDF

    IRF650A

    Abstract: No abstract text available
    Text: IR F650A Advanced Power MOSFET FEATURES B V dss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 28 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 200V


    OCR Scan     		irf650a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    irf644a

    Abstract: No abstract text available
    Text: IRF644A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge B V DSS - 250 V ^ D S o n = 0 . 2 8 Q. lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		irf644a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IR F624A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge 250 V ^ D S o n = 1 .1 a lD = ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |JA (Max.) @ V DS = 250V


    OCR Scan     		irf624a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF750A A dvanced Power MOSEET FEATURES B V DSS - 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 15 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V


    OCR Scan     		irf750a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D PDF

    DIODE 19 9

    Abstract: No abstract text available
    Text: IRF614A A dvanced Power MOSEET FEATURES B V DSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n = ■ Lower Input Capacitance lD = 2.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10nA (M ax.) @ V DS = 250V


    OCR Scan     		irf614a 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D DIODE 19 9 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF530A A dvanced Power MOSEET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA Max. @ V DS= 1 0 0 V


    OCR Scan     		IRF530A QQ3b32fl O-220 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF820A A d v a n c e d P ow er MOSEET FEATURES - 500 V ^DS on = 3.0 Í2 B V DSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 500V ■ Lower RDS(ON) : 2.00011 (Typ.)


    OCR Scan     		IRF820A QQ3b32fl O-220 7Tb4142 DD3b33D PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF740A A dvanced Power MOSEET FEATURES B V DSS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 1 ■ Improved Gate Charge < o ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V


    OCR Scan     		IRF740A QQ3b32fl O-220 7Tb4142 DD3b33D PDF

    ic sc 4145

    Abstract: No abstract text available
    Text: IRF720A A dvanced Power MOSEET FEATURES BVDSS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current :10|^A Max. @ VDS = 400V ■ Lower RDS(ON) :


    OCR Scan     		irf720a O-220 30-OTO T0-220 QQ3b32fl 3b32ti O-220 500MIN DD3b33D ic sc 4145 PDF