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    Fairchild Semiconductor Corporation IRFS250B

    21.3A, 200V, 0.085ohm, N-Channel Power MOSFET '
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    IRFS250 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS250 Fairchild Semiconductor 200V N-Channel MOSFET Original PDF
    IRFS250 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS250 Unknown FET Data Book Scan PDF
    IRFS250 Samsung Electronics N-Channel Power MOSFET TO-3PF Scan PDF
    IRFS250A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    IRFS250A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFS250A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    IRFS250B Fairchild Semiconductor 200 V N-Channel MOSFET Original PDF
    IRFS250B_FP001 Fairchild Semiconductor 200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A Original PDF

    IRFS250 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF IRFS250B

    IRFS250A

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.085 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 21.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


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    PDF IRFS250A IRFS250A

    Untitled

    Abstract: No abstract text available
    Text: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF IRFS250B

    IRFS250B

    Abstract: No abstract text available
    Text: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF IRFS250B IRFS250B

    irfs250a

    Abstract: No abstract text available
    Text: IRFS250B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF IRFS250B IRFS250B FP001 irfs250a

    thermistor KSD201

    Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
    Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™


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    PDF

    FLMP SuperSOT-6

    Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
    Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1


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    PDF SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80

    FQPF*7N65C APPLICATIONS

    Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
    Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM


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    PDF UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    fqaf40n25

    Abstract: fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06
    Text: Discrete MOSFETs TO-3PF RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3PF N-Channel FQAF85N06 60 Single 0.01 - - - 86 67 100 FQAF65N06 60 Single 0.016 - - - 48 49 86


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    PDF FQAF85N06 FQAF65N06 FQAF90N08 FQAF70N08 FQAF58N08 FQAF44N08 SSF70N10A FQAF70N10 FQAF12P20 SFF9240 fqaf40n25 fqaf19n20l FQAF44N08 FQAF44N10 FQAF55N10 FQAF58N08 FQAF65N06 FQAF70N08 FQAF70N10 FQAF85N06

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


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    PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    SSP6N60A

    Abstract: IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A
    Text: March 2002 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide March 2002 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF SC70-6 OT-23) FDR8321L FDR8521L FDFS2P106A FDFS2P103 FDFS2P102 SSP6N60A IRF650 IRF540 mosfet with maximum VDS 12v SSP2N60B SSS7N60B ssr2955 IRFS630A SSP4N60A sss3n90a IRF634A

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    IRFS250A

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = ID ■ E xtended S afe O pe ra ting A rea ■


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    PDF IRFS250A IRFS250A

    irfs250a

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BV,OSS = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 u A Max. @ VDS= 200V


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    PDF IRFS250A irfs250a

    irfs250a

    Abstract: No abstract text available
    Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A


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    PDF IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge dss = ^D S o n = lD = ■ E xtended S afe O pe ra ting A rea ■


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    PDF IRFS250A

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max. @ VOS= 200V


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    PDF IRFS250A

    Untitled

    Abstract: No abstract text available
    Text: IRFS250A Advanced Power MOSFET FEATURES BV dss = 200 V • A valan che Rugged T e ch n o lo g y ■ Rugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^DS on = 0.085 £2 lD = 21.3 A ■ E xtended S afe O pe ra ting A rea


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    PDF IRFS250A GG3b333 G03b33M G03b335

    irf1740

    Abstract: IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640
    Text: PRODUCT GUIDE D/I- PAK N-Channel Standard FET Part Number SSR3055A BV DSS (V) (A) (0» cfes (pF) I D R DSM Q Po (nC) fC/W) (W) Page 8 0.150 280 17 7.04 18 Vol.1 IRFR014A 8.2 0.140 280 17 7.04 18 Vol.1 IRFR024A 15 0.070 600 32 4.14 30 Vol.1 IRFR034A 23 0.040


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    PDF SSR3055A IRFR014A IRFR024A IRFR034A IRFR110A IRFR120A IRFR130A IRFR210A IRFR220A IRFR230A irf1740 IRL244 IRF1740A ks 0550 IRL244A IRFZ34A SSH6N80A IRF634A irfs750 IRFS640

    b 772 p

    Abstract: No abstract text available
    Text: MOSFETs FUNCTION GUIDE TO-3P FULL P ACK A G E N -CH A N N EL BVos$ V lo(on)(A) Ros(on)(Q) R0jc(K/W) Po(Watt) Page IRFS141 IRFS151 60 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS140 IRFS150 100 19.40 27.70 0.077 0.055 1.50 1.30 83 96 767 772 IRFS241


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    PDF IRFS141 IRFS151 IRFS140 IRFS150 IRFS241 1RFS251 IRFS240 IRFS250 IRFS341 IRFS351 b 772 p

    IRFS432

    Abstract: IRFS130
    Text: FUNCTION GUIDE POWER MOSFETs TO-3P FULL PACKAGE NCHANNEL BVdss V IIXonXA) RDS(onXO) 80.00 8.30 9.70 17.30 19.40 23.50 27.50 0.230 0.160 0.100 0.077 0.080 0.055 IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 100.00 8.30 9.70 17.30 19.40 23.50 27.70 0.230


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    PDF IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 IRFS132 IRFS130 IRFS142 IRFS140 IRFS432

    1RFS530

    Abstract: Samsung s3 IRFS250 IRFS251 IRFS252 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342
    Text: - 304 - f m % X H Vd s tí: £ Vg s m fô Ta= 2 5 ' 0 !d Pd Ig s s V g s th Id s s or € * V dg l (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) m 1d (mA) tt a*i Ds(or.) Vd s = Vg s (13= 2 5 * 0 Id (on) Ciss g fs Coss Crss V g s -0


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    PDF IRFS250 T0-247 IRFS251 IRFS252 O-247 1RFS330 IRFS33I 1RFS530 Samsung s3 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342