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    SSH45N20A Search Results

    SSH45N20A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSH45N20A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSH45N20A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSH45N20A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    SSH45N20A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    mosfet 45a 200v

    Abstract: SSH45N20A
    Text: SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    PDF SSH45N20A 100oC) mosfet 45a 200v SSH45N20A

    SSH45N20A

    Abstract: No abstract text available
    Text: SSH45N20A Advanced Power MOSFET FEATURES BVDSS = 200 V Avalanche Rugged Technology RDS on = 0.065 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 45 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = 200V


    Original
    PDF SSH45N20A 100oC) SSH45N20A

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    45N20B

    Abstract: 45N20
    Text: SSH45N20B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching


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    PDF SSH45N20B 45N20B SSH45N20B FP001 45N20B 45N20

    FQA90N08

    Abstract: FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08
    Text: Discrete MOSFETs TO-3P RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-3P N-Channel FQA170N06 60 Single 0.0056 - - - 220 170 375 FQA85N06 60 Single 0.01 - - - 86 100 214


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    PDF FQA170N06 FQA85N06 FQA65N06 FQA160N08 FQA90N08 FQA70N08 FQA58N08 FQA44N08 SFH9240 SFH9250L FQA90N08 FQA38N30 FQA9N90 equivalent sfh154 FQA85N06 FQA170N06 IRFP150A FQA140N10 FQA160N08 FQA58N08

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


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    PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    sss4n60a

    Abstract: IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china
    Text: B-FET Line Card Fairchild Power MOSFETs B-FET Line Card Overview Fairchild has developed a new range of 200V~600V MOSFETs, called B-FETs, using Fairchild’s proprietary, planar, DMOS technology. This advanced technology is especially tailored for minimizing on-state resistance, providing superior switching performance, and withstanding a high


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    PDF IRF830A IRF830B Power247TM, sss4n60a IRFS634A IRFS630A SSP4N60A irf640b SSS7N60A IRFU210A SSP7N60A IRF634B IRF840A china

    ss8050 d 331

    Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
    Text: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2


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    PDF F-91742 ss8050 d 331 tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34

    Untitled

    Abstract: No abstract text available
    Text: SSH45N20A Advanced Power MOSFET FEATURES BV,DSS = 2 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 MA Max @ VOS= 200V


    OCR Scan
    PDF SSH45N20A

    irfs250a

    Abstract: No abstract text available
    Text: Device List TO-3P IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A SSH25N40A IRFP440A IRFP450A SSH22N50A SSH7N60A SSH10N60A SSH17N60A TO-3PF IRFS140A IRFS150A SSF70N10A IRFS240A IRFS250A SSF45N20A IRFS244A IRFS254A


    OCR Scan
    PDF IRFP140A IRFP150A SSH70N10A IRFP240A IRFP250A SSH45N20A IRFP244A IRFP254A IRFP340A IRFP350A irfs250a

    kode diode

    Abstract: diode kd 610
    Text: SSH45N20A Advanced Power MOSfET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 200 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 MA Max. @ VDS = 200V


    OCR Scan
    PDF SSH45N20A SSH45N2 kode diode diode kd 610

    GQM0307

    Abstract: SSH45N20A d0403
    Text: SSH45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance In = 45 A ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ VDS = 200V


    OCR Scan
    PDF SSH45N20A O-220-F-4L DD3b33E 003b333 GQM0307 SSH45N20A d0403

    Untitled

    Abstract: No abstract text available
    Text: SSH45N20A Advanced Power MOSFET FEATURES BVdss = 200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.065 £2 lD = 45 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 |JA (Max.) @ V DS = 200V


    OCR Scan
    PDF SSH45N20A

    SSH45N20A

    Abstract: No abstract text available
    Text: SSH45N20A Advanced Power M O SFET FEATURES B V dss • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge ^ D S o n = lD ■ E xtended S afe O pe ra ting A rea ■


    OCR Scan
    PDF SSH45N20A SSH45N20A