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    Untitled

    Abstract: No abstract text available
    Text: IRFS150A A dvanced Power MOSEET FEATURES B VDSS - 100 V Rugged Gate Oxide Technology ^ D S o n = 0 -0 ^ ^ • Lower Input Capacitance lD = 31 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ 175°C Operating Temperature ■ Lower Leakage Current : 10 HA (Max.) @ V DS= 1 0 0 V


    OCR Scan     		PDF IRFS150A 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: KA3S0880RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,


    OCR Scan     		PDF KA3S0880RF 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: SSF17N60A Advanced Power MOSFET FEATURES = b v d ss 600 V • Avalanche Rugged Technology ^D S on = ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 pA(Max.) @ V 03 = 600V


    OCR Scan     		PDF SSF17N60A D04D171 0G3b333 QG3b33M G03b335

    SSF4N90AS

    Abstract: EL DRIVER 3-STAGE
    Text: SSF4N90AS Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS= 900V


    OCR Scan     		PDF SSF4N90AS ib4142 0DM0201 003b333 003b33M D03b335 SSF4N90AS EL DRIVER 3-STAGE

    tvn 610

    Abstract: SSF45N20A
    Text: SSF45N20A Advanced Power MOSFET FEATURES BV0SS = 200 V • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 pA Max. @ VDS = 200V


    OCR Scan     		PDF SSF45N20A 003b333 003b33M D03b335 tvn 610 SSF45N20A

    Untitled

    Abstract: No abstract text available
    Text: SSF8N90A Advanced Power MOSFET FEATURES B V DSs = 9 0 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe OperatingArea ■ Lower Leakage Current :25pA Max. @ VDS= 900V


    OCR Scan     		PDF SSF8N90A 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: SSF25N40A Advanced Power MOSFET FEATURES BV0SS = 400 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ H RoS on = 0 -2 ß Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10nA(Max.) @ VDS= 400V


    OCR Scan     		PDF SSF25N40A 0-162iJ 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: IRFS340A A dvanced Power MOSEET FEATURES B V DSS Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 n A (M a x .) @ V DS = 400V ■ Lower RDS(ON) : 0.437 £1 (Typ.)


    OCR Scan     		PDF IRFS340A 0G3b333 QG3b33M G03b335

    74142

    Abstract: SSF10N80A 115U ssv 620 00401ST
    Text: SSF10N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 800 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 |iA Max. @ V ^ = 800V


    OCR Scan     		PDF SSF10N80A 00401ST 003b333 003b33M D03b335 74142 SSF10N80A 115U ssv 620

    74142

    Abstract: SSF5N90A
    Text: SSF5N90A Advanced Power MOSFET FEATURES BVDss - 900 V • Avalanche Rugged Technology ^DS on = 2.9 £2 Rugged Gate Oxide Technology Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @ VDS = 900V


    OCR Scan     		PDF SSF5N90A 003b333 003b33M D03b335 74142 SSF5N90A

    IRF 850 mosfet

    Abstract: IRF 850 250M SSF70N10A
    Text: Advanced Power MOSFET SSF70N10A FEATURES • ■ ■ ■ ■ ■ BVdss = 100 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175oC Operating Temperature RDS on — 0.023 Í2


    OCR Scan     		PDF SSF70N10A 175oC 04G237 003b333 003b33M D03b335 IRF 850 mosfet IRF 850 250M SSF70N10A

    SSF6N80A

    Abstract: No abstract text available
    Text: SSF6N80A Advanced Power MOSFET FEATURES BVdss = 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology Ros on = 2 .0 Q ■ Lower Input Capacitance lD = 4.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 piA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSF6N80A GD4D22S 003b333 003b33M D03b335 SSF6N80A

    SSF6N90A

    Abstract: No abstract text available
    Text: SSF6N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS= 900V


    OCR Scan     		PDF SSF6N90A G0MG231 003b333 003b33M D03b335 SSF6N90A

    SSF5N80A

    Abstract: PU 4145 pj 89 diode
    Text: SSF5N80A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ b v dss Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 jiA Max. @ VDS = 800V


    OCR Scan     		PDF SSF5N80A GG40207 B2739 003b333 003b33M D03b335 SSF5N80A PU 4145 pj 89 diode

    Untitled

    Abstract: No abstract text available
    Text: IRFS350A A dvanced Power MOSEET FEATURES B V DSS - 400 V Rugged Gate Oxide Technology ^ D S o n = 0 .3 ^ • Lower Input Capacitance lD = 11.5 A ■ Improved Gate Charge ■ Avalanche Rugged Technology ■ ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA (Max.) @ V DS = 400V


    OCR Scan     		PDF IRFS350A 0G3b333 QG3b33M G03b335

    L65A

    Abstract: SSF10N90A FI-80 717 MOSFET 74142
    Text: SSF10N90A Advanced Power MOSFET FEATURES BVdss = 900 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 6.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA (Max.) @


    OCR Scan     		PDF SSF10N90A 003b333 003b33M D03b335 L65A SSF10N90A FI-80 717 MOSFET 74142

    SSF7N60A

    Abstract: LD101
    Text: SSF7N60A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ BVdss = 600 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25nA Max. @ V DS = 600V


    OCR Scan     		PDF SSF7N60A 0G4D243 003b333 003b33M D03b335 SSF7N60A LD101

    SSF7N90A

    Abstract: D-0402
    Text: SSF7N90A Advanced Power MOSFET FEATURES = 9 0 0 R û S o n = 1 .8 5 A b • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 fiA (Max.) @ VDS= 900V


    OCR Scan     		PDF SSF7N90A 7Tb4142 GG402S5 003b333 003b33M D03b335 SSF7N90A D-0402

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG POWER SWITCH KA3S1265R S a m s u n g P o w e r S w it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,


    OCR Scan     		PDF KA3S1265R G03b335

    Untitled

    Abstract: No abstract text available
    Text: IRFS244A A dvanced Power MOSEET FEATURES BVDSS - 250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ^DS on = 0.28 Q. lD = 10.2 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 1 0 |^A (M a x.) @ V DS = 250V


    OCR Scan     		PDF IRFS244A 0G3b333 QG3b33M G03b335

    Untitled

    Abstract: No abstract text available
    Text: KA3S0965RF SAMSUNG POWER SWITCH Sa m su n g P o w e r Sw it c h The SPS product family is specially designed for an offline SMPS with minimal external component. The SPS consist of high voltage Power SenseFET and current mode control IC. Included control IC features a tr-immed oscillator, under voltage lock out, leading edge blanking,


    OCR Scan     		PDF KA3S0965RF 0G3b333 QG3b33M G03b335

    SSF7N80A

    Abstract: No abstract text available
    Text: SSF7N80A A d van ced Power MOSFET FEATURES BVdss - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 pA Max. @ VDS = 800V


    OCR Scan     		PDF SSF7N80A b4145 003b333 003b33M D03b335 SSF7N80A

    SSF10N60A

    Abstract: No abstract text available
    Text: SSF10N60A Advanced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology ■ ^ D S o n Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge = 0 - 8 & lD = 6.9 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ V DS = 600V


    OCR Scan     		PDF SSF10N60A 003b333 003b33M D03b335 SSF10N60A

    SSF9N90A

    Abstract: No abstract text available
    Text: SSF9N90A A d van ced Power MOSFET FEATURES B ^D S S Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 }iA Max. ■ Low RDS(0N) : 0.938 Q (Typ.) “ ^ D S (o n ) “


    OCR Scan     		PDF SSF9N90A 100dc) 003b333 003b33M D03b335 SSF9N90A