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    IRFS251 Search Results

    IRFS251 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFS251 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFS251 Unknown FET Data Book Scan PDF
    IRFS251 Samsung Electronics N-Channel Power MOSFET TO-3PF Scan PDF

    IRFS251 Datasheets Context Search

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    250M

    Abstract: IRFS250 IRFS251
    Text: N-CHANNEL POWER MOSFETS IRFS250/251 FEATURES • • • • • • • Lower R d s o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF IRFS250/251 IRFS250 IRFS251 b4142 250M

    IRFS432

    Abstract: IRFS130
    Text: FUNCTION GUIDE POWER MOSFETs TO-3P FULL PACKAGE NCHANNEL BVdss V IIXonXA) RDS(onXO) 80.00 8.30 9.70 17.30 19.40 23.50 27.50 0.230 0.160 0.100 0.077 0.080 0.055 IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 100.00 8.30 9.70 17.30 19.40 23.50 27.70 0.230


    OCR Scan     		PDF IRFS133 IRFS131 IRFS143 IRFS141 IRFS153 IRFS151 IRFS132 IRFS130 IRFS142 IRFS140 IRFS432

    1RFS530

    Abstract: Samsung s3 IRFS250 IRFS251 IRFS252 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342
    Text: - 304 - f m % X H Vd s tí: £ Vg s m fô Ta= 2 5 ' 0 !d Pd Ig s s V g s th Id s s or € * V dg l (V) (V) * /CH * /CH (A) m (nA) Vg s (V) ( m A) Vd s (V) min max (V) (V) m 1d (mA) tt a*i Ds(or.) Vd s = Vg s (13= 2 5 * 0 Id (on) Ciss g fs Coss Crss V g s -0


    OCR Scan     		PDF IRFS250 T0-247 IRFS251 IRFS252 O-247 1RFS330 IRFS33I 1RFS530 Samsung s3 IRFS332 IRFS333 IRFS340 IRFS341 IRFS342