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    IRFF211 Price and Stock

    Rochester Electronics LLC IRFF211

    N-CHANNEL POWER MOSFET
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    DigiKey IRFF211 Bulk 260
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    Infineon Technologies AG IRFF211

    - Bulk (Alt: IRFF211)
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    Avnet Americas IRFF211 Bulk 4 Weeks 313
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    New Jersey Semiconductor Products, Inc. IRFF211

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    Bristol Electronics IRFF211 350 1
    • 1 $19.2
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    New Jersey Semiconductor Products Inc IRFF211

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    Quest Components IRFF211 280
    • 1 $20.8
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    Harris Semiconductor IRFF211

    IRFF211 - 2.2A, 150V, 1.5 OHM, N-Channel POWER MOSFET '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IRFF211 500 1
    • 1 $1.17
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    • 1000 $0.9918
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    Find more IRFF211 price and stock on Findchips.com

    IRFF211 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF211 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF211 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF211 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF211 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF211 International Rectifier N-CHannel Power MOSFET in a TO-39 Package, 200 Volt, 1.5 Ohm Scan PDF
    IRFF211 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF211 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF211 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF211 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF211 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF211 Unknown FET Data Book Scan PDF
    IRFF211 Siliconix N-Channel Enhancement Mode Transistor Scan PDF
    IRFF211 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF211R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF211R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF211R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF211 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF210, IRFF211, IRFF212, IRFF213 S E M I C O N D U C T O R 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF210, IRFF211, IRFF212, IRFF213 TA17442. IRFF213

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    2N6782U

    Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U

    DD 127 D TRANSISTOR

    Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/556F MIL-S-19500/556E 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U DD 127 D TRANSISTOR MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786

    IRFF210

    Abstract: IRFF211 IRFF212 IRFF213
    Text: Standard Power MOSFETs- IRFF210, IRFF211, IRFF212, IRFF213 File N um b er N-Channel Enhancement-Mode Power Field-Effect Transistors 1.8A and 2.2A, 150V - 200V rosioni = 1.50 and 2.40 N-C H A N N EL EN HANCEM ENT MODE Features: •


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213 -3374I IRFF212and IRFF213 IRFF210 IRFF211 IRFF212

    TA17442

    Abstract: TA-1744
    Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213 TB334 RFF210, RFF211, RFF212, IRFF213 TA17442 TA-1744

    IRFF210

    Abstract: IRFF211 IRFF212
    Text: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211


    OCR Scan     		PDF E5473S IRFF210/211/212/213 O-205AF IRFF210 IRFF211 IRFF212 1RFF213

    diode deg avalanche zo 150 20

    Abstract: IRFF210R IRFF211R IRFF212R IRFF213R
    Text: Rugged Power MOSFETs_ IRFF210R, IRFF211R, IRFF212R, IRFF213R File Num ber 2025 Avalanche Energy Rated N-Channel Power MOSFETs 1.8A and 2.2A, 150V-200V N-CHANNEL ENHANCEMENT MODE rDs on = 1.5Q and 2.40 D Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF210R, IRFF211R, IRFF212R, IRFF213R 50V-200V 92CS-Â IRFF212R IRFF213R diode deg avalanche zo 150 20 IRFF210R IRFF211R

    Untitled

    Abstract: No abstract text available
    Text: w vys S IRFF210, IRFF211, IRFF212, IRFF213 S e m ico n d ucto r y 7 1.8A, and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 1.8A and 2.2A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF210, IRFF211, IRFF212, IRFF213

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRFF210

    Abstract: IRFF211
    Text: IMEF RELD EFFECT POWER TRANSISTOR IRFF210,211 2.2 AM PERES 200,150 VOLTS RD S O N = 1.5 n Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF210 33K/W RFF211â IRFF211

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    FF212R

    Abstract: 4440 ic circuit diagram
    Text: J J Ì H A R R I S I I R F F 2 R 1 R F 2 1 2 1 1 / / 2 R 1 / / 1 2 1 2 2 1 R 2 / / 2 2 1 1 3 3 R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Features • F Package T 0 -2 0 5 A F 1 .8 A a n d 2 .2 A , 1 5 0 V - 2 0 0 V BOTTOM VIEW • rD S o n = 1 -5 f l a n d 2 . 4 f l


    OCR Scan     		PDF 1RFF210R, FF212R FF213R FF212R 4440 ic circuit diagram

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRF8C30

    Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
    Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50

    IRFD110

    Abstract: IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF O-247 O-204 O-205 O-220 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRFD110 IRF5134 IRF120 IRF540 1RF542 IRF510 IRF522 IRF611-3 IRFD1Z3 IRF143

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    IRF510

    Abstract: irf540
    Text: _ THOnSON/ D I S TRIBUTOR 5fiE D • 105^573 0005705 35k ■ TCSK P o w er M O S FE T s IR F -S e rie s P o w e r M O S FE T s — N -C h a n n e l Package Maximum Ratings BV q s s V IDS (A) 'DS(O N) OHMS 60 0.40 0.50 0.80 1 1.1 1.3 3 3.50 3.50 4 5


    OCR Scan     		PDF 4-PIn80 IRFD113 IRFD111 IRFD123 IRFD121 IRFF113 IRFF111 IRF513 IRF511 IRFF123 IRF510 irf540

    lm 3907

    Abstract: IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS
    Text: HE D I 4ÔSS455 OOQTBbM 5 | i f - 7 Data Sheet No. PD-9.353E in te r n a tio n a l RE CT IFIER INTERNATIONAL RECTIFIER IO R HEXFET TRANSISTORS IRFF21 O IRFF21< 1 N-CHANNEL POWER MOSFETs TÜ-39 PACKAGE IRFF212 IRFF213 200 Volt, 1.5 Ohm HEXFET Features: The HEXFET® technology is the key to International


    OCR Scan     		PDF ss455 IRFF213 G-346 lm 3907 IRFF211 IRFF213 IRFF210 IRFF212 3907 mosfet G346 AAABS

    Untitled

    Abstract: No abstract text available
    Text: • M302271 DÖSm4S HARRIS b07 ■ HAS IRFF2 10/ 2 1 1 / 2 1 2 /2 1 3 IRFF2 1 0 R /2 1 1 R /2 1 2 R /2 1 3 R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 0 5 A F BOTTOM VIEW • 1 .8 A and 2.2A, 150V - 200V • rDS on = 1 -5 il and 2 .4 Cl


    OCR Scan     		PDF M302271 IRFF210, IRFF211, IRFF212, IRFF213 IRFF210R, IRFF211R, IRFF212R, IRFF213R

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25