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    IRFF212, Search Results

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    IRFF212, Price and Stock

    New Jersey Semiconductor Products, Inc. IRFF212

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF212 18,674 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF212

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF212 14,939
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF212, Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF212 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF212 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF212 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF212 International Rectifier N-CHannel Power MOSFET in a TO-39 Package, 200 Volt, 1.5 Ohm Scan PDF
    IRFF212 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF212 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF212 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF212 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF212 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF212 Unknown FET Data Book Scan PDF
    IRFF212 Siliconix N-Channel Enhancement Mode Transistor Scan PDF
    IRFF212 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF212R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF212R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF212R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF212, Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF213

    Abstract: SY 180/4 IRFF212
    Text: FUT RELD EFFECT POWER TRANSISTOR IRFF212,213 1.8 AMPERES 200,150 VOLTS RDS ON = 2-4 n Preliminary T his series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er M O SFETs utilizes G E ’s advanced Power D M O S technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF212 IRFF213-Â IRFF213 SY 180/4

    IRFF210

    Abstract: IRFF211 IRFF212
    Text: löE D SILICONIX INC • ÖSS473S QOmflQl 0 ■ IRFF210/211/212/213 f T ’Silfco n ix JJm in c o rp o ra te d N-Channel Enhancement Mode Transistors "T-IA -07 TO-2Q5AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS 'W •d (A) IRFF210 200 1.5 2.2 IRFF211


    OCR Scan     		PDF E5473S IRFF210/211/212/213 O-205AF IRFF210 IRFF211 IRFF212 1RFF213