Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    IRFF113 Search Results

    SF Impression Pixel

    IRFF113 Price and Stock

    New Jersey Semiconductor Products, Inc. IRFF113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF113 3,988 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    International Rectifier IRFF113

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF113 5 1
    • 1 $10.08
    • 10 $6.552
    • 100 $6.552
    • 1000 $6.552
    • 10000 $6.552
    		Buy Now
    Quest Components IRFF113 4
    • 1 $13.5
    • 10 $6.75
    • 100 $6.75
    • 1000 $6.75
    • 10000 $6.75
    		Buy Now

    New Jersey Semiconductor Products Inc IRFF113

    MOSFET Transistor, N-Channel, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFF113 3,190
    • 1 $20.8
    • 10 $20.8
    • 100 $20.8
    • 1000 $16
    • 10000 $16
    		Buy Now

    IRFF113 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF113 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF113 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Scan PDF
    IRFF113 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF113 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF113 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF113 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF113 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF113 Motorola N-channel enhancement-mode silicon gate TMOS small-signal field effect transistor. Scan PDF
    IRFF113 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF113 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF113 Unknown FET Data Book Scan PDF
    IRFF113 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF113 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF113R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF113R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF113R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF113 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRFF113

    Abstract: TA17441
    Text: IRFF110, IRFF111, IRFF112, IRFF113 S E M I C O N D U C T O R 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. IRFF113 TA17441

    CMF65-5.556K

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556K MIL-PRF-19500/556J 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. CMF65-5.556K

    2N6782U

    Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,


    Original     		PDF MIL-PRF-19500/556J MIL-PRF-19500/556H 2N6782, 2N6782U, 2N6784, 2N6784U, 2N6786, 2N6786U, MIL-PRF-19500. 2N6782U 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U

    mosfet cross reference

    Abstract: pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode
    Text: Selector Guides Selector Guides MOSFETs The Supertex enhancement-mode and depletion-mode MOSFET families utilize both vertical and lateral double diffused MOS processes. They feature low parasitic capacitances with interdigitated structures for high-frequency operation. Their low gate threshold voltage is


    Original     		PDF T0-92 options4206A ZVN4206C ZVN4206E ZVN4306A TN2106K1 VN2210N3 TN0606N3 TN0606N6 mosfet cross reference pj 929 diode pj 1229 diode BSS250 VN0109N5 pj 66 diode pj 929 BSS295 "direct replacement" BSS295 "cross reference" pj 69 diode

    24v dc power supply with uc3842

    Abstract: unitrode Applications Note U-96A UC3842 note buck converter non isolated 24v to 12v dc power supply with uc3842 uc3842 dc/dc converter 24v application circuits U-96A UCC3804 application UC3842 application 24V uc3842 unitrode 100 watt boost uc3842 application note
    Text: APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these


    Original     		PDF U-133A UC3842 24v dc power supply with uc3842 unitrode Applications Note U-96A UC3842 note buck converter non isolated 24v to 12v dc power supply with uc3842 uc3842 dc/dc converter 24v application circuits U-96A UCC3804 application UC3842 application 24V uc3842 unitrode 100 watt boost uc3842 application note

    motorola mosfet for audio

    Abstract: IRFF113 IRFF110
    Text: M O T O R O L A SC -CXSTRS/R F> ^ 6367254 MOTOROLA SC DÊjb3h7ES4 0003503 1 98D 83283 XSTRS/R F D T -lT -o -j MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m a ll-S ig n a l Field Effe ct T ran sisto r N-Channel Enhancement-Mode


    OCR Scan     		PDF IRFF110 IRFF113 IRFF112 IRFF113 motorola mosfet for audio

    irff113

    Abstract: TA17441 SS1020
    Text: h a f r r is IRFF110, IRFF111, IRFF112, IRFF113 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 O hm , N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 TA17441. RFF113 irff113 TA17441 SS1020

    1rff110

    Abstract: IRFF110 IRFF111 IRFF113 F112 FF110 IRFF112 cs 30-08 io4
    Text: -;- Standard Power M O SFETs IRFF110, IRFF111, IRFF112, IRFF113 File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHAN C EM EN T MODE


    OCR Scan     		PDF IRFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF112 IRFF113 758VQSS 1rff110 IRFF110 IRFF111 F112 FF110 cs 30-08 io4

    Untitled

    Abstract: No abstract text available
    Text: i H s A e - R c o R - u IR FF 110, IRFF111, IRFF112, IRFF113 i s c t c 3.0A and 3.5A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.0A and 3.5A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF111, IRFF112, IRFF113 IRFF110, RFF112, RFF113

    1RFF111

    Abstract: a08g IRFF110 IRFF111 IRFF112 IRFF113
    Text: G E SOLID STATE Dl DE D Ë | 3 ô 7 S 0 a i 001flE4ci 3 3875081 G E SOLID STATE 01E 18249 Standard Power M O S F E T s_ IRFF110, IRFF111, IRFF112, IRFF113 T~- $ i ~ ° i D File Number 1562 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF 7SD01 1RFF110, IRFF111, IRFF112, IRFF113 0V-100V IRFF110, IRFF112 IRFF113 1RFF111 a08g IRFF110 IRFF111

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    F110F

    Abstract: SK 6211 TD-205A flower in the rain IRFF110R IRFF111R IRFF112R IRFF113R
    Text: Rugged Power M OSFETs File N u m b e r 2022 IRFF110R, IRFF111R.IRFF112R, IRFF113R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 60V-100V rDs on = 0.60 and 0.8CÎ N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF Number2022 IRFF110R, IRFF111R IRFF112R, IRFF113R 0V-100V tICS-41111 IRFF111R, IRFF112R F110F SK 6211 TD-205A flower in the rain IRFF110R IRFF113R

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


    OCR Scan     		PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF110 IRFF113 Advance Information S m all-S ig n al Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N -C H A N N E L T M O S P O W E R FETs r D S o n = 0 .6 O H M 100 V O L T S . . . d e s ig n e d f o r lo w v o lt a g e , h ig h s p e e d p o w e r s w it c h in g


    OCR Scan     		PDF IRFF110 IRFF11n IRFF113

    IRFF112

    Abstract: IRFF113
    Text: D D . IRFF112.113 \ñ 3.0 AMPERES 100, 60 VOLTS RDS ON = 0.8 n FIELD EFFECT POWER TRANSISTOR Preliminary This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF112 IRFF112-â IRFF113

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


    OCR Scan     		PDF

    U-96A

    Abstract: uc3842 unitrode 100 watt unitrode Applications Note U-96A pwm led driver using uc3842 UNITRODE u96A 24v to 5v dc power supply with uc3842 UC3842 note buck converter non isolated UCC3801 schematic 24v dc power supply with uc3842 u96A
    Text: y APPLICATION NOTE U-133A UCC 3800/1/2/3/4/5 BiCMOS CURRENT MODE CONTROL ICs BILL ANDREYCAK INTRODUCTION Power supply design has become increasingly more challenging as engineers confront the difficulties of obtaining higher power density, improved performance and lower cost. The control for many of these


    OCR Scan     		PDF U-133A UC3842 PE-64973 U-96A uc3842 unitrode 100 watt unitrode Applications Note U-96A pwm led driver using uc3842 UNITRODE u96A 24v to 5v dc power supply with uc3842 UC3842 note buck converter non isolated UCC3801 schematic 24v dc power supply with uc3842 u96A

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    mfe9200

    Abstract: F111 IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120 1rfd9120
    Text: - 258 - f M t± £ € ft A t Vd s or i Vd g £ Vg s & Ta=25cC 1! Id Pd * /CH * /CH Id s s Ig s s Vg s min Vg s (V) Vd s (V) th) max (V) Id (itA) % (V) IR p -100 ± 2 0 -1.0 1 ±500 ±20 -250 -100 -2.0 -4.0 -0.25 IRFD9123 IR p -60 ± 2 0 -0.8 1 ±500 ±2 0


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 mfe9200 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 IRF09120