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    IRFF232 Price and Stock

    Renesas Electronics Corporation IRFF232

    - Bulk (Alt: IRFF232)
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    Avnet Americas IRFF232 Bulk 4 Weeks 1
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    Vishay Siliconix IRFF232

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    Bristol Electronics IRFF232 1,424
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    New Jersey Semiconductor Products, Inc. IRFF232

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    Bristol Electronics IRFF232 350 1
    • 1 $19.2
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    New Jersey Semiconductor Products Inc IRFF232

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    Quest Components IRFF232 280
    • 1 $20.8
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    Harris Semiconductor IRFF232

    IRF232 - 4.5A, 200V, N-Channel Power MOSFET '
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    Rochester Electronics IRFF232 203 1
    • 1 $1.02
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    • 100 $0.9597
    • 1000 $0.8678
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    Find more IRFF232 price and stock on Findchips.com

    IRFF232 Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF232 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF232 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF232 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF232 International Rectifier N-Channel Power MOSFETs in a TO-39 Package 200 Volt, 0.4 Ohm Scan PDF
    IRFF232 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF232 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF232 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF232 Unknown FET Data Book Scan PDF
    IRFF232 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF232 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF232 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF232R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF232R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF232R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF232 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF230, IRFF231, IRFF232, IRFF233 S E M I C O N D U C T O R 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF230, IRFF231, IRFF232, IRFF233 TA17412.

    2N6796

    Abstract: 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 09 March 1998 INCH-POUND MIL-PRF-19500/557F 09 December 1997 SUPERSEDING MIL-S-19500/557E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/557F MIL-S-19500/557E 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, 2N6802U 2N6796 2N6796U 2N6798 2N6798U 2N6800 2N6800U 2N6802 2N6802U c 2811 transistor irff130 marking

    MOSFET cross-reference

    Abstract: 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 September 2010. MIL-PRF-19500/557H 24 June 2010 SUPERSEDING MIL-PRF-19500/557G 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON


    Original     		PDF MIL-PRF-19500/557H MIL-PRF-19500/557G 2N6796, 2N6796U, 2N6798, 2N6798U, 2N6800, 2N6800U, 2N6802, 2N6802U MOSFET cross-reference 2N6798 557h 2N6796 2N6796U 2N6798U 2N6800 2N6800U 2N6802 2N6802U

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Text: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original     		PDF Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008

    IRFF230

    Abstract: IRFF231 IRFF232 IRFF233
    Text: Standard Power M O S F E T s - IRFF230, IRFF231 IRFF232, IRFF233 File N u m be r N-Channel Enhancement-Mode Power Field-Effect Transistors 4 .5 A a n d 5.5 A , 1 5 0 V - 2 0 0 V rDsioni = 0 .4 0 a n d 0 .6 0 N-CHANNEL enhancement MODE


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 IRFF232 IRFF233 ff230 75bvdss IRFF230 IRFF231

    LS 2027

    Abstract: IRFF230R IRFF231R IRFF232R IRFF233R diode deg avalanche zo 150
    Text: Rugged Power MOSFETs IRFF230R, IRFF231R, IRFF232R, IRFF233R File Number 2027 Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 150V-200V rDS on = 0.40 and 0.6fi N -C H A N N E L E N H A N C E M E N T M O D E D Features: • S in g le pu lse avalanche e n ergy ra ted


    OCR Scan     		PDF IRFF230R, IRFF231R, IRFF232R, IRFF233R 50V-200V IRFF232R IRFF233R FF230F LS 2027 IRFF230R IRFF231R diode deg avalanche zo 150

    Untitled

    Abstract: No abstract text available
    Text: H A R R IRFF230, IRFF231, IRFF232, IRFF233 S s e m i c o n d u c t o r 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150V to 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 RFF232, RFF233

    TA17412

    Abstract: No abstract text available
    Text: h a r r is IRFF230, IRFF231, IRFF232, IRFF233 4.5A and 5.5A, 150V to 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 150 V to 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF230, IRFF231, IRFF232, IRFF233 TA17412. RFF231, RFF232, TA17412

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: •I 4302271 00S415S 33 HARRIS SSb ■ H AS IR FF230/231/232/233 IR FF230R /231R /232R /233R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -205A F • 4.5A and 5.5A, 150V - 200V • rDS on = 0 .4 0 and 0.6 0 • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF 00S415S FF230/231/232/233 FF230R /231R /232R /233R -205A IRFF230, IRFF231, IRFF232,

    9358

    Abstract: 2n6797 2N6781 2N6787 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130
    Text: XOR HERMETIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER 2bE D IN TERNATI ONAL RECTIFIER • 4ÔS54S2 OOIOSST □ ■ TO-39 Package T-39-Û3 N-CHANNEL Types Iq cont max 0.18 0.18 0.25 0.3 0.3 0.4 0.6 0.6 0.8 TC - 25°C A 8.0 8.0 7.0 6.0 6.0 5.0 3.5 3.5 3.0 'DM


    OCR Scan     		PDF T-39-Ã IRFF131 2N6795 IRFF133 IRFF121 2N6787 IRFF123 IRFF111 2N6781 IRFF113 9358 2n6797 2N6781 2N6795 IRFF111 IRFF113 IRFF121 IRFF123 IRFF130

    IRF 544 N MOSFET

    Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
    Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no


    OCR Scan     		PDF

    IRFF231

    Abstract: g358 IRFF230 IRFF232 IRFF233 g-355 2sca
    Text: HE D I 4flSS45E 000^371. 1 | Data Sheet No. PD-9.354E INTERNATIONAL R E C T I F I E R tr IN T E R N A T IO N A L R E C T IF IE R I O R T-39-09 HEXFET T R A N S IS T O R S IRFF230 ^—"î0 IRFF231 N-CHANNEL POWER M O SFET s TO-39 P A C K A G E 200 Volt, 0.4 Ohm HEXFET


    OCR Scan     		PDF 4flss45e T-39-09 IRFF230 IRFF232 IRFF233 G-358 IRFF231 g358 IRFF230 IRFF232 IRFF233 g-355 2sca

    IRF8C30

    Abstract: mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAF50 IRFAF52 IRFAG50
    Text: 257 - f M « tt fi ± Vd s or € t Vd g h V £ fë (Ta=25t3) Vg s (V) Id 1GSS Pt> * /CH * /CH (A) (W) (nA) V g s th) 1DSS Vg s (V) (MA) Vd s (V) (V) (V) ft m m '14 (Ta=25°C) Ciss Vd s = Vg s Id (mA) Coss Crss ft Vg s -O (max) *typ V g s ( 0 ) (V) Id (A)


    OCR Scan     		PDF IRFAF50 O-204AA IRFAF52 1RFAG40 RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRF8C30 mfe9200 1RFBC40 IRFD110 IRFD123 IRFD9010 IRFD113 IRFAG50

    IRF1401

    Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
    Text: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204


    OCR Scan     		PDF IRF1301 IRF1311 IRF1321 IRF1331 IRF1401 1RF1411 IRF1421 IRF1431 IRF1501 IRF1511 IRF4311 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221

    IRFF230R

    Abstract: No abstract text available
    Text: 23 HARRIS IR FF230/231/232/233 IRFF230R/231R/232R/233R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features TQ-205AF • 4.5A and 5.5A, 150V - 200V • rDS on = ° - 4 fl an(J ° - 6 fl • Single Pulse Avalanche Energy Rated*


    OCR Scan     		PDF FF230/231/232/233 IRFF230R/231R/232R/233R TQ-205AF IRFF230, IRFF231, IRFF232, IRFF233 IRFF230R, IRFF231R, IRFF232R, IRFF230R

    thyristor TAG 8506

    Abstract: nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719
    Text: TABLE OF CONTENTS Catalog Number 11Q New For 1989! • Over 7,900 New Products • 13 New M anufacturers PRODUCT INDICES tiamp*,'fminei forskSockets ' Solder Equipment endTtfob ] vriHp\< lint Equipment, Panel Meters, Aejulpmant, i A P R E M IE R C o m p an y


    OCR Scan     		PDF 11PM104 thyristor TAG 8506 nais inverter vf 7f operation manual 922AA1Y-A4P optek A400 817 Sprague 513D sprague 926c Sprague 195P Rapa relay 12vdc triac tag 8948 Mascot 719

    IRFP237

    Abstract: IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244
    Text: TH OH SO N/ D I S T R I B U TOR 5ñE D T05t.fl73 QD D S 7 1 D 713 TCSK Power M O S F E T s R u gge d -Se rie s Power M O S F E T s — N -Channel continued 0.45 0.60 0.70 0.80 1.80 2 2.20 2.50 3 3.5 4 4.5 5 5.5 8 9 16 18 25 30 250 3.30 3.80 6.50 8.10 13


    OCR Scan     		PDF T05tifl73 QDDS71D IRF232R IRF230R IRF242R IRF240R IRF252R IRF250R IRFF212R IRFF210R IRFP237 IRFP234 IRFP235 IRF246 IRF640R IRF627 irfp236 IRFP255 1RF632 IRF244

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    THOMSON DISTRIBUTOR 58e d

    Abstract: 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF014 IRFF034 IRFF111
    Text: THOMSON/ DISTRIBUTOR HEXFET SñE D • li^ J Rectifier Hermetic Package TO-39 N-Channel Part Number 1 RDS on On-State Resistance (Ohms) Ip Continuous Drain Current 25eC Case (Amps) 1dm Pul» Drain Current (Amps) Pq Max Power Dissipation (Watts) 25 65 15 25


    OCR Scan     		PDF IRFF014 T0-205AF IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 THOMSON DISTRIBUTOR 58e d 9026873 IRFF121 THOMSON 58E THOMSON 58E CASE OUTLINE THOMSON DISTRIBUTOR 2N6782 IRFF034 IRFF111

    F232

    Abstract: IRFF232 IRFF233 transistor f232
    Text: IRFF;232,233 [ F M l £ i ° [ t f f i Q @ [ F U T 4.5 AMPERES 200, 150 VOLTS RDS ON = 0*6 11 FIELD EFFECT POWER TRANSISTOR Preliminari' This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF232 -1RFF233 F232 IRFF233 transistor f232