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    IRFF12 Price and Stock

    International Rectifier IRFF120

    Trans MOSFET N-CH 100V 6A 3-Pin TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRFF120 2,343 1
    • 1 $17.9515
    • 10 $17.9515
    • 100 $17.9515
    • 1000 $17.9515
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    Arrow Electronics IRFF120 2,343 25 Weeks 1
    • 1 -
    • 10 $16.882
    • 100 $15.41
    • 1000 $15.41
    • 10000 $15.41
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    Quest Components IRFF120 1
    • 1 $12.0501
    • 10 $12.0501
    • 100 $12.0501
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    New Jersey Semiconductor Products, Inc. IRFF123

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF123 4,733 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    HARTING Technology Group IRFF123

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    Bristol Electronics IRFF123 1,000
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    New Jersey Semiconductor Products, Inc. IRFF120

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF120 915 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
    		Buy Now

    New Jersey Semiconductor Products, Inc. IRFF121

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics IRFF121 350 1
    • 1 $19.2
    • 10 $19.2
    • 100 $16.9843
    • 1000 $15.744
    • 10000 $15.744
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    Find more IRFF12 price and stock on Findchips.com

    IRFF12 Datasheets (71)

    Part ECAD Model Manufacturer Description Curated Type PDF
    IRFF120 International Rectifier HEXFET Transistor Original PDF
    IRFF120 Intersil 6.0A, 100V, 0.300 ?, N-Channel Power MOSFET Original PDF
    IRFF120 Semelab N-Channel Power MOSFET Enhancement MODE Original PDF
    IRFF120 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF120 General Electric N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 6.0A. Scan PDF
    IRFF120 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF120 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF120 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF120 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF120 Motorola Switchmode Datasheet Scan PDF
    IRFF120 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF120 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFF120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF120 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF120 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF120 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF120 Unknown FET Data Book Scan PDF
    IRFF120 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    IRFF120 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFF120R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    IRFF12 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IRFF120 Data Sheet Title FF1 bt 0A, 0V, 00 m, March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF120 IRFF120 O-205AF TB334,

    100V 60A Mosfet

    Abstract: 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode
    Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


    Original     		PDF 2N6788 IRFF120 O-205AF) 100V 60A Mosfet 50V 60A MOSFET 2N6788 IRFF120 100V 60A Diode

    Untitled

    Abstract: No abstract text available
    Text: IRFF120 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF120 O205AF) 11-Oct-02

    Untitled

    Abstract: No abstract text available
    Text: IRFF120, IRFF121, IRFF122, IRFF123 S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		PDF IRFF120, IRFF121, IRFF122, IRFF123 TA09594.

    IRFF120

    Abstract: JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator
    Text: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International


    Original     		PDF PD-90426D O-205AF) IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 T0-39 O-205AF IRFF120 JANTX2N6788 JANTXV2N6788 n-channel, 70v, 60a 4.5V to 100v input regulator

    IR 60A, 100V Mosfet

    Abstract: IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode
    Text: PD - 90426C IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF120 BVDSS 100V RDS(on) 0.30Ω ID 6.0A  The HEXFET technology is the key to International


    Original     		PDF 90426C IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 O-205AF) IR 60A, 100V Mosfet IRFF120 90426C JANTX2N6788 JANTXV2N6788 100V 60A Diode

    IRFF120

    Abstract: TB334
    Text: IRFF120 Data Sheet January 2002 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF120 IRFF120 TB334

    Untitled

    Abstract: No abstract text available
    Text: J loancti, Line. J.E.11ZU £s TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF120 Features 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 6.0A, 100V This N-Channel enhancement mode silicon gate power field


    Original     		PDF IRFF120

    Untitled

    Abstract: No abstract text available
    Text: 2N6788 IRFF120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET ENHANCEMENT MODE 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 0.89 max. (0.035) 12.70 (0.500) min. FEATURES 0.41 (0.016) 0.53 (0.021) dia. • AVALANCHE ENERGY RATING


    Original     		PDF 2N6788 IRFF120 O-205AF)

    Untitled

    Abstract: No abstract text available
    Text: PD-90426D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE TO-205AF IRFF120 JANTX2N6788 JANTXV2N6788 REF:MIL-PRF-19500/555 100V, N-CHANNEL Product Summary Part Number IRFF120 BVDSS RDS(on) 100V 0.30Ω ID 6.0A T0-39 ® The HEXFET technology is the key to International


    Original     		PDF PD-90426D O-205AF) IRFF120 JANTX2N6788 JANTXV2N6788 MIL-PRF-19500/555 T0-39 O-205AF

    IRFF120

    Abstract: TB334
    Text: IRFF120 Data Sheet March 1999 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET 1563.3 Features • 6.0A, 100V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF120 IRFF120 TB334

    Untitled

    Abstract: No abstract text available
    Text: IRFF120R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)6.0# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)24# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)20# Minimum Operating Temp (øC)-55õ


    Original     		PDF IRFF120R

    IRFF122

    Abstract: IRFF123
    Text: IRFF122,123 F [ f F 5.0 AMPERES 100, 60 VOLTS Rd S ON = 0.4 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFIF122 IRFF122^ IRFF123-Â IRFF122 IRFF123

    Untitled

    Abstract: No abstract text available
    Text: IRFF120, IRFF121, IRFF122, IRFF123 HARRIS S E M I C O N D U C T O R 5.0A and 6.0A, 80V and 100V, 0.30 and 0.40 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 5.0A and 6.0A, 80V and 100V • High Input Im pedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		PDF IRFF120, IRFF121, IRFF122, IRFF123 TA09594. RFF122, IRFF123

    SFN106B9

    Abstract: DS0026 IRFF121 3909
    Text: b l D E^ f lf fl3bfifciD5 l3 t .a k 0 5 bl ‘ DE •SOLITRÔN DEVICES INC B o l i t r D E V I C E S , o n T I T | . s f n T T- 3 9 - 0 9 i o 6 B 9 IIM C . POWER MOS DEVICE 60V/6A N Channel, TO-39 Package, IRFF121 Equivalent The new Solitron Power MOS technology


    OCR Scan     		PDF T-39-09 SFN106B9 IRFF121 HP214A /IF/450V SFN106B9 DS0026 3909

    IRFF121

    Abstract: IRFF120 IRFF12
    Text: FIT IRFF120’121 6.0 AMPERES 100, 60 VOLTS RDS(ON = 0.3 n HELD EFFECT POWER TRANSISTOR Preliminary This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF 100ms IRFF12 IRFF121 IRFF120

    OA 161 diode

    Abstract: IRFF120 IRFF121 IRFF122 IRFF123 3ws7
    Text: Standard Power MOSFETs IRFF120, IRFF121, IRFF122, IRFF123 File N u m b e r 1563 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 5.0A and 6.0A, 60V-100V rDs on = 0.30 Q and 0.40 O Features:


    OCR Scan     		PDF IRFF120, IRFF121, IRFF122, IRFF123 0V-100V IRFF122 IRFF123 OA 161 diode IRFF120 IRFF121 3ws7

    sfn106a9

    Abstract: No abstract text available
    Text: 8368602 § SOL ITRQN l i t r 0 n - D E V IC E S , INC. D E V IC ES INC kl PE [ f l 3 b f l i3D5 □□□□350 ^ _ | T-39-09 SFN106A9 POWER MOS DEVICE 100V/6A N Channel, TO-39 Package, IRFF120 Equivalent The new Solitron Power MOS technology combines the efficient


    OCR Scan     		PDF T-39-09 00V/6A) IRFF120 SFN106A9 F/450V HP214A sfn106a9

    I22R

    Abstract: IRFF122R IRFF120R IRFF121R IRFF123R IRFFI22R
    Text: Rugged Power MOSFETs_ IRFF120R, IRFF121R, IRFFI22R, IRFF123R File Num ber 2023 Avalanche Energy Rated N-Channel Power MOSFETs 5.0A and 6.0A, 60V-100V ib s o n = 0.300 and 0.400 N-CHANNEL ENH ANCEM ENT M ODE Feature«: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF120R, IRFF121R, IRFF123R 0V-100V IRFF122R IRFF123R 92CS-42S60 I22R IRFF120R IRFF121R IRFFI22R

    mosfet 4430

    Abstract: FF121R 4431 mosfet
    Text: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*


    OCR Scan     		PDF IRFF12 IRFF120R/121 /122R/123R IRFF120, IRFF121, IRFF122, IRFF123 IRFF120R, IRFF121R, IRFF122R, mosfet 4430 FF121R 4431 mosfet

    1RFF120

    Abstract: No abstract text available
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF120 IRFF123 Advance Information S m all-S ig nal Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N-CHANNEL TMOS POWER FETs rDS on = 0-3 OHM 100 VOLTS rDS(on) = 0.4 OHM 60 VOLTS . . . desig n ed fo r lo w vo ltag e , high speed p o w e r sw itch in g


    OCR Scan     		PDF IRFF120 IRFF123 IRFF123 1RFF120

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


    OCR Scan     		PDF 1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25

    Untitled

    Abstract: No abstract text available
    Text: International ï» ! Rectifier HEXFET Power MOSFETs Hermetic Package TO-39 N-Channel Part Number V o s Drain Source Voltage Volts IRFF014 IRFF034 60 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 &DS(on) On-State Resistance (Ohms) I q Continuous Drain Current


    OCR Scan     		PDF IRFF014 IRFF034 IRFF113 IRFF111 IRFF123 IRFF121 IRFF133 IRFF131 IRFF112 2N6782

    IRFF122

    Abstract: ANA1-20
    Text: 8 368602 SOL ITRON DEVICES INC hi fl3bflb DS DD0D2flfl fc, | S o litro n _ T-39-09 SFN10GC9 D E V I C E S , IIMC. POWER MOS DEVICE 1 0 0 V /5 A N Channel, TO-39 Package, IRFF122 Equivalent The new Solitron Power MOS technology combines the


    OCR Scan     		PDF T-39-09 00V/5A) IRFF122 HP214A ANA1-20