Untitled
Abstract: No abstract text available
Text: J loancti, Line. J.E.11ZU £s TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRFF120 Features 6.0A, 100V, 0.300 Ohm, N-Channel Power MOSFET • 6.0A, 100V This N-Channel enhancement mode silicon gate power field
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IRFF120
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mosfet 4430
Abstract: FF121R 4431 mosfet
Text: 23 HARRIS IRFF12 0 /1 2 1/12 2/123 IRFF120R/121 R /122R/123R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 1991 Package Features T O -2 0 5 A F • 5.0A and 6.0A , 8 0 V - 1 0 0V • rDS on = 0.30S1 and 0 .4 0 ii • Single Pulse Avalanche Energy R ated*
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IRFF12
IRFF120R/121
/122R/123R
IRFF120,
IRFF121,
IRFF122,
IRFF123
IRFF120R,
IRFF121R,
IRFF122R,
mosfet 4430
FF121R
4431 mosfet
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1RFF120
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFF120 IRFF123 Advance Information S m all-S ig nal Field E ffe c t T ran sisto r N-Channel Enhancem ent-M ode Silicon G ate TM O S N-CHANNEL TMOS POWER FETs rDS on = 0-3 OHM 100 VOLTS rDS(on) = 0.4 OHM 60 VOLTS . . . desig n ed fo r lo w vo ltag e , high speed p o w e r sw itch in g
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OCR Scan
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IRFF120
IRFF123
IRFF123
1RFF120
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