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    IRFD921 Search Results

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    IRFD921 Price and Stock

    Vishay Siliconix IRFD9210PBF

    MOSFET P-CH 200V 400MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9210PBF Bulk 3,202 1
    • 1 $2.43
    • 10 $1.564
    • 100 $2.43
    • 1000 $0.78742
    • 10000 $0.71359
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    Vishay Siliconix IRFD9210

    MOSFET P-CH 200V 400MA 4DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRFD9210 Tube 2,500
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    • 10000 $1.6375
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    Bristol Electronics IRFD9210 23
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    ComSIT USA IRFD9210 1,100
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    Vishay Intertechnologies IRFD9210PBF

    P Channel Mosfet, -200V, 400Ma Hd-1; Channel Type:P Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:400Ma; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Vishay IRFD9210PBF
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IRFD9210PBF Bulk 2,500
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    TTI IRFD9210PBF Tube 1,700 50
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    • 100 $1
    • 1000 $1
    • 10000 $1
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    TME IRFD9210PBF 2,084 1
    • 1 $0.866
    • 10 $0.546
    • 100 $0.434
    • 1000 $0.39
    • 10000 $0.39
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    International Rectifier IRFD9210

    TRANSISTOR,MOSFET,P-CHANNEL,200V V(BR)DSS,400MA I(D),TO-250VAR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IRFD9210 1,358
    • 1 $1.6
    • 10 $1.6
    • 100 $1.6
    • 1000 $0.64
    • 10000 $0.56
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    IRFD9210 36
    • 1 $3.3396
    • 10 $3.3396
    • 100 $1.8368
    • 1000 $1.8368
    • 10000 $1.8368
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    IRFD9210 24
    • 1 $0.96
    • 10 $0.8
    • 100 $0.576
    • 1000 $0.576
    • 10000 $0.576
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    Component Electronics, Inc IRFD9210 238
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    Others IRFD9210PBF

    AVAILABLE EU
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    ComSIT USA IRFD9210PBF 3,525
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    Chip 1 Exchange IRFD9210PBF 1,573
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    IRFD921 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD9210 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD9210 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 400MA 4-DIP Original PDF
    IRFD9210 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, -200V, -4A, Pkg Style HEXDIP Scan PDF
    IRFD9210 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD9210 International Rectifier P-Channel HEXDIP 200 Volt, 3.0 Ohm, 1-Watt Scan PDF
    IRFD9210 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD9210 International Rectifier HEXFET Power MOSFET Scan PDF
    IRFD9210 International Rectifier Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A) Scan PDF
    IRFD9210 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD9210 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD9210 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD9210 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD9210 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD9210 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFD9210PBF International Rectifier HEXFET Power MOSFET Original PDF
    IRFD9210PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 200V 400MA 4-DIP Original PDF
    IRFD9213 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD9213 International Rectifier P-Channel HEXDIP 200 Volt, 3.0 Ohm, 1-Watt Scan PDF
    IRFD9213 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD9213 Motorola European Master Selection Guide 1986 Scan PDF

    IRFD921 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 2002/95/EC 18-Jul-08 IRFD9210 PDF

    IRFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 2002/95/EC 11-Mar-11 IRFD9210 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    IRFD9210PBF IR

    Abstract: IRFD120
    Text: PD- 95934 IRFD9210PbF • Lead-Free www.irf.com 1 10/28/04 IRFD9210PbF 2 www.irf.com IRFD9210PbF www.irf.com 3 IRFD9210PbF 4 www.irf.com IRFD9210PbF www.irf.com 5 IRFD9210PbF 6 www.irf.com IRFD9210PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations


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    IRFD9210PbF Fig-14 IRFD120 IRFD9210PBF IR IRFD120 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


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    IRFD9210, SiHFD9210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRFD9210PBF VISHAY

    Abstract: IRFD9210 SiHFD9210
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


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    IRFD9210, SiHFD9210 18-Jul-08 IRFD9210PBF VISHAY IRFD9210 PDF

    IRFD120

    Abstract: VISHAY DIODE MARKING CODE
    Text: PD- 95934 IRFD9210PbF • Lead-Free 10/28/04 Document Number: 91140 www.vishay.com 1 IRFD9210PbF Document Number: 91140 www.vishay.com 2 IRFD9210PbF Document Number: 91140 www.vishay.com 3 IRFD9210PbF Document Number: 91140 www.vishay.com 4 IRFD9210PbF Document Number: 91140


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    IRFD9210PbF 12-Mar-07 IRFD120 VISHAY DIODE MARKING CODE PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210_RC, SiHFD9210_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


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    IRFD9210 SiHFD9210 AN609, CONFIGU-10 0426m 8968m 4501m 6212m PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 2002/95/EC 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) () VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    SiHFD9210

    Abstract: No abstract text available
    Text: IRFD9210, SiHFD9210 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating - 200 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 8.9 Qgs (nC) 2.1 Qgd (nC) 3.9 Configuration • Repetitive Avalanche Rated 3.0 RoHS* • For Automatic Insertion


    Original
    IRFD9210, SiHFD9210 12-Mar-07 PDF

    IRGKI165F06

    Abstract: IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103
    Text: Index HEXFET Power MOSFETs Part Number International Rectifier ID R DS on V(BR)DSS Continuous On-State Drain-to-Source Drain Current Breakdown Voltage Resistance 25°C (Ω) (A) (V) ID Continuous Drain Current 70°C (A) RθJ A Max Thermal Resistance (°C/W)


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    OT-23) IRLML2402* IRLML2803 IRLML5103 IRLML6302* IRGKI165F06 IRGDDN600M06 IRGDDN600K06 IRF7311 IRGNIN075 IRFK6H054 IRF7601 IRLI2203N IRLML2803 IRLML5103 PDF

    irf1010e equivalent

    Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
    Text: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N


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    O-220AB O-220 IRFZ24N* IRFIZ24N IRFD024 IRF1010E* IRFI1310N IRFD014 IRFZ44E* IRFI540N irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent PDF

    1rfd9210

    Abstract: 387H IRFD9210 Rg2-55
    Text: PD-9.387H International 11«1Rectifier IRFD9210 HEXFET Power M O S F E T • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channe! Fast Switching Ease of Paralleling V d s s _ -2 0 0 V R DS on =


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    IRFD9210 1rfd9210 387H Rg2-55 PDF

    IRF7205

    Abstract: IRF7342 IXTH7P50 T0-220AB BSS83 BSS84 irfp9240 IRF5210S IRFD9110 IRFD9210
    Text: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi P-MOSFET copTMpoBKa no TOKy lD Kofl: BSS84 BSS92 BS250 BSS83 IRF5210S IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRFD9014 BSP315P IRFD9024 IRF9610 IRFL9014 IRF9620 IRF9630 SI9953DY SI9948AEY


    OCR Scan
    BSS84 BSS92 BS250 BSS83 IRF5210S T0263 IRFD9210 IRFD9220 IRFD9110 IRFD9120 IRF7205 IRF7342 IXTH7P50 T0-220AB irfp9240 PDF

    IRFD9213

    Abstract: No abstract text available
    Text: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T I F I E R I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


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    5s452 T-37-25 IRFD9210 advanT-37-25 C-176 IRFD9213 PDF

    IRFD9213

    Abstract: IRFD9210 387F c174 T3725 1RFD9213
    Text: H E I 4055452 0000422 T-37-25 7 | Data Sheet No. PD-9.387F INTERNATIONAL R E C T IF IER I N T E R N A T I O N A L R E C T I F I E R IO R HEXFET* TRANSISTORS IRFD9210 P-CHANNEL HEXDIP IRFDS21 3 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


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    5S452 T-37-25 IRFD9210 C-176 IRFD9213 IRFD9210 387F c174 T3725 1RFD9213 PDF

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 1rfd9120 LM3661TL-1.25
    Text: - 258 - f ft M t± £ € A£ t Vd s Vg s or Vd g i % V 1RFD9120 IRFD9123 IRFD9210 IRFD9213 iRFD9220 IR IR IR IR IR 1RFD9223 IRFF110 IR IR IR IRFF111 IRFF112 IRFF113 IRFF120 IRFF121 IRFF122 IR IR IR IR IR IRFF123 !R IRFF130 IR IR IR IR IR IR IR IR IR IR


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    1RFD9120 IRFD9123 IRF09210 -4RFF230 O-205AF IRFF231 T0-205AF IRFF232 IRFF233 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 LM3661TL-1.25 PDF

    IRFD9210

    Abstract: DIODE S4 72A 387H IRFD921
    Text: International S Rectifier PD-9.387H IRFD9210 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable P-Channel Fast Switching Ease of Paralleling VDSS = -200V ^DS on = 3 -0 i i


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    IRFD9210 dFD9210 IRFD9210 DIODE S4 72A 387H IRFD921 PDF

    Untitled

    Abstract: No abstract text available
    Text: 4655452 tor 137 H IN R PD-9.387H R e c tifie r _ IRFD9210 HEXFET P o w e r M O S F E T • • • • • • • 0015D 7Q IN T E R N A T IO N A L R E C T IF IE R Dynam ic dv/dt Rating Repetitive Avalanche Rated For Autom atic Insertion End Stackable


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    IRFD9210 0015D -200V PDF

    IRF0110

    Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
    Text: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123


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    IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310 PDF

    F111

    Abstract: IRFD9123 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120
    Text: - 258 - f t M t± £ € A£ ft Vd s or i Vd g % V Vg s ( V) & ( T a = 2 5 cC ) Id 1! Idss Igss Pd * /C H * /CH (A ) (W) ( n A) Vg s ( V) ( M A) Vg s Vd s (V ) th ) % Vd s = Vg s min max ( V) ( V) Id ( itA) fa ft Fo s(o n ) (Ta=25^0) I d ( on) g fs C iss


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    1RFD9120 IRFD9123 IRF09210 O-205AF IRFF222 1RFF223 T0-205AF 1RFF230 F111 IRFD9213 IRFD9220 IRFF110 IRFF113 IRFF120 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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