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    IRFD113 Price and Stock

    Vishay Siliconix IRFD113PBF

    MOSFET N-CH 60V 800MA 4DIP
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    DigiKey IRFD113PBF Tube 2,031 1
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    Vishay Siliconix IRFD113

    MOSFET N-CH 60V 800MA 4DIP
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    DigiKey IRFD113 Tube
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    Rochester Electronics LLC IRFD113

    MOSFET N-CH 60V 800MA 4DIP
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    DigiKey IRFD113 Tube 437
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    Vishay Intertechnologies IRFD113PBF

    N-Channel 100-V Rohs Compliant: Yes |Vishay IRFD113PBF
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    Newark IRFD113PBF Bulk 2,500
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    TME IRFD113PBF 1
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    SILI IRFD113

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    Bristol Electronics IRFD113 200
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    Quest Components IRFD113 160
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    IRFD113 Datasheets (22)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFD113 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 800MA 4-DIP Original PDF
    IRFD113 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFD113 General Electric Power MOSFET field effect power transistor. Scan PDF
    IRFD113 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFD113 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFD113 International Rectifier HEXFET Power MOSFETs Scan PDF
    IRFD113 International Rectifier Plastic Package HEXFETs Scan PDF
    IRFD113 Motorola European Master Selection Guide 1986 Scan PDF
    IRFD113 Motorola TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,1.5A I(D),TO-39 Scan PDF
    IRFD113 Motorola Switchmode Datasheet Scan PDF
    IRFD113 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    IRFD113 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFD113 Unknown FET Data Book Scan PDF
    IRFD113 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFD113 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    IRFD113 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFD113 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    IRFD113PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 800MA 4-DIP Original PDF
    IRFD113(R) Toshiba Power MOSFETs Cross Reference Guide Original PDF
    IRFD113R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF

    IRFD113 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		IRFD113, SiHFD113 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		IRFD113, SiHFD113 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    irfd113p

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		IRFD113, SiHFD113 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 irfd113p PDF

    diode c 2479

    Abstract: No abstract text available
    Text: IRFD113, SiHFD113 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • For Automatic Insertion 60 RDS(on) (Ω) VGS = 10 V • Compact Plastic Package 0.8 Qg (Max.) (nC) 7 • End Stackable Qgs (nC) 2 • Fast Switching Qgd (nC)


    Original     		IRFD113, SiHFD113 2002/95/EC 11-Mar-11 diode c 2479 PDF

    IRFD110

    Abstract: IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91
    Text: IRFD110, IRFD111, IRFD112, IRFD113 Semiconductor 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    Original     		IRFD110, IRFD111, IRFD112, IRFD113 IRFD110 IRFD113 HARRIS IRFD110 IRFD111 IRFD112 TA17441 TB334 IRFD110 91 PDF

    MSC2404

    Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage


    Original     		MSA1022-CT1 Emitte218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72 PDF

    BF245

    Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30


    Original     		MSC2295-BT1 MSC2295-CT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BF245 BC237 mps8093 bf244 MSA1022 msc2295 MAD1107P MPS6568 PDF

    stencil

    Abstract: BC237 automatic heat detector project report BC393 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and


    Original     		BAT54T1 Ju218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 stencil BC237 automatic heat detector project report BC393 equivalent PDF

    BC237

    Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device


    Original     		SC-70/SOT-323 Spa218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 level shifter 2N5401 2771 040 0002 MUN5214T1 PDF

    bs170 replacement

    Abstract: BC237 BC30 transistor K 2056
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Switching BS170 N–Channel — Enhancement 1 DRAIN  2 GATE 3 SOURCE MAXIMUM RATINGS 1 Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive tp ≤ 50 µs Drain Current(1)


    Original     		BS170 226AA) DS218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 bs170 replacement BC237 BC30 transistor K 2056 PDF

    transistor bc237 bc337

    Abstract: replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors NPN Silicon BC337,-16,-25,-40 BC338,-16,-25,-40 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC337 BC338 Unit Collector – Emitter Voltage VCEO 45 25 Vdc Collector – Base Voltage


    Original     		BC337 BC338 226AA) Junction218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor bc237 bc337 replacement transistor BC337 bc337 TRANSISTOR equivalent bc338 equivalent BC337 TO-92 Generic BC337 circuit example BC160-16 BC337-25 "pin compatible" BC237 BC338 REPLACEMENT PDF

    BC237

    Abstract: MPS-A70 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistor MPSA70 PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –40 Vdc Emitter – Base Voltage


    Original     		MPSA70 226AA) CHARACTERI218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 MPS-A70 equivalent PDF

    bc182 equivalent 2n2907

    Abstract: bc183 equivalent BC237 BC182 bc184 BF245 bc184 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors BC182,A,B NPN Silicon BC183 BC184 COLLECTOR 1 2 BASE 3 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol BC182 BC183 BC184 Unit Collector – Emitter Voltage VCEO 50 30 30 Vdc Collector – Base Voltage VCBO


    Original     		BC182 BC183 BC184 BC184 226AA) Junction218A MSC1621T1 MSC2404 bc182 equivalent 2n2907 bc183 equivalent BC237 BF245 bc184 equivalent PDF

    IRFD110

    Abstract: irfd113 328h IRFD11Q k 3525 MOSFET S402 FD113 fd110 IRFD110/111/112/113
    Text: HE D | 4055452 QQOaBbfl S | Dgta Sheet N q p D.g 328H INTERNATIONAL R E C T IF IE R T-35-25 IN T E R N A T IO N A L R E C T IF IE R llO R l HEXFET TRANSISTORS IRFD11Q N-CHANNEL IRFD113 HEXDIP 1-WATT RATED POWER MOSFETs 4 PIN, DUAL-IN-LINE PLASTIC PACKAGE


    OCR Scan     		T-35-25 IRFD11Q IRFD113 C-121 IRFD110, FD113 T-35-25 IRFD110 328h k 3525 MOSFET S402 fd110 IRFD110/111/112/113 PDF

    IRFD110

    Abstract: IRFD113 IRF0110 c 3209 IRFD111 IRFD112
    Text: - Standard Power MOSFETs File Number IRFD110, IRFD111, IRFD112, IRFD113 2314 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		IRFD110, IRFD111, IRFD112, IRFD113 IRFD113 IRFD110 IRF0110 c 3209 IRFD111 IRFD112 PDF

    Untitled

    Abstract: No abstract text available
    Text: W vys S IRFD110, IRFD111, IRFD112, IRFD113 S em icon du cto r y 7 1A and 0.8A, 80V and 100V, 0.6 and 0.8 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 1A and 0.8A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate


    OCR Scan     		IRFD110, IRFD111, IRFD112, IRFD113 PDF

    irfd113

    Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
    Text: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated


    OCR Scan     		IRFD110R, IRFD111R, IRFD112R, IRFD113R 0V-100V 92CS-42698 IRFD112R IRFD113R irfd113 IRFD110R IRFD111R IRFD111 PDF

    irfd110

    Abstract: fd110
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode TM O S FET TR A NSISTO R S FET DIP Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline


    OCR Scan     		IRFD110 IRFD113 3b7554 fd110 PDF

    MO-001

    Abstract: TO-251 Outline TO-251AA
    Text: International j«»|Rectifier HEXFET Power M O SFE T s Plastic Insertable Package HEXDIP N-Channel Part Number Vos Draln Source Voltage Volts IRFD015 IRFD014 IRFD025 IRFD024 60 IRFD1Z3 IRFD113 IRFD123 80 IRFD1Z0 IRFD110 IRFD120 100 IRFD213 IRF0223 IRFD210


    OCR Scan     		IRFD015 IRFD014 IRFD025 IRFD024 IRFD113 IRFD123 IRFD110 IRFD120 IRFD213 IRF0223 MO-001 TO-251 Outline TO-251AA PDF

    irfd110

    Abstract: IRFD113 1RFD113
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRFD110 IRFD113 TMOS Field Effect Transistor Dual In-Line Package N-Channel Enhancement Mode Ideal for Peripheral Control Applications Intermediate 1 Watt Power Capability Standard DIP Outline TM O S FET TR A N S IS TO R S


    OCR Scan     		IRFD110 IRFD113 IRFD110 IRFD113 1RFD113 1RFD113 PDF

    IRFD110

    Abstract: irfd113
    Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRFD110 IRFD113 Advance Information S m a ll-S ig n a l T M O S Field E ffe c t T ra n s is to r 1 WATT TMOS FETs rDS on = 0.8 OHM 60 VOLTS rDS(on) = 0.6 OHM 100 VOLTS N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP


    OCR Scan     		IRFD110 IRFD113 irfd113 PDF

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


    OCR Scan     		06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211 PDF

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF

    MFE9200

    Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
    Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­


    OCR Scan     		DK101/D. O-22QI 0020-H MFE9200 BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E PDF