MPF256
Abstract: No abstract text available
Text: MOTOROLA îb SC Ì X S T R S / R F> 6367254 MOTOROLA SC XSTRS/R DET|t,3b7554 ODfiaböT □ 96D F 82689 D — r-z ?-¿ j r MPF256 CASE 29-04, STYLE 5 TO-92 (TO-226AA) M A X IM U M RATIN G S Symbol Value U nit Drain-Source Voltage Vd S ±30 Vdc Drain-Gate Voltage
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3b7554
MPF256
O-226AA)
MPF256
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MJ10006
Abstract: No abstract text available
Text: I tBbTESM MOTOROLA TECHNICAL DATA D e s ifjn o r s D a ta S h e e t 10 A M P E R E NPN SILICON SWITCHMODE SER IES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE POWER DARLINGTON TRANSISTORS T he M J1 0 0 0 6 an d M J1 0 0 0 7 Darlington transistors are design ed
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MJ10006
MJ10007
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sm 0038
Abstract: K 1113 BDY58 Transistor 126 BUV10N transistor 12E transistor 1B
Text: MOTOROLA SC XSTRS/R 12E D | F b 3 b 7 2 S4 GGâM â? T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 25 AM PERES SWITCHMODE* SERIES NPN SILICON POWER TRANSISTOR NPN SILICON POWER METAL TRANSISTOR . . . designed for high current, high speed, high power applications.
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b3b72S4
20atlc
BDY58
AN415A)
sm 0038
K 1113
BDY58
Transistor 126
BUV10N
transistor 12E
transistor 1B
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2N5086
Abstract: BCW61AL BCW61BL BCW61CL BCW61DL
Text: 12E M A X I M U M R A T IN G S Symbol Value Unit Collector-Emitter Voltage VCEO 32 V Collector-Base Voltage VCBO 32 V Emitter-Base Voltage Ve b o 5.0 V ic 100 mAdc Symbol M ax Unit Pd 225 mW 1.8 mW/°C Ro j a 556 °C/W Pd 300 mW 2.4 mW/°C Ro j a 417 °c/w
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L3L75SM
BCW61AL,
2N5086
BCW61AL
BCW61BL
BCW61CL
BCW61DL
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mtd10n05e
Abstract: CASE369A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD10N05E Designer's Data Sheet Motorola Preferred Device TM OS IV Power Field Effect Transistor TM O S POWER FETs 10 AMPERES RDS on = 0.1 O H M 50 VOLTS N-Channel Enhancement-Mode DPAK fo r Surface Mount This advanced "E " series of TMOS power MOSFETs is
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MTD10N05E
ti3b7S54
mtd10n05e
CASE369A
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uc 2895
Abstract: 2n2895 2n2896 sn289
Text: MAXIMUM RATINGS Rating Symbol 2N2895 2N2896 C o lle cto r-E m itte r Voltage VCEO 65 90 Vdc C o lle cto r-E m itte r Voltage VCER 80 140 Vdc C ollector-Base Voltage VCBO 120 Em itter-Base Voltage Vebo 7.0 Vdc C o lle cto r C u rrent — C o ntinuous ie 1.0
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2N2895
2N2896
2N2895,
O-206AA)
2N2895
2N2896
SN2895
3b7554
uc 2895
sn289
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2n930
Abstract: 2N930A A-2N930
Text: 2N930, A M AXIM U M RATINGS R a tin g Sym bol 2N930 2N930A U n it v CEO 45 45 Vdc C o lle cto r-E m itte r V o lta g e C o lle cto r-B ase V olta g e v CBO 45 60 Vdc E m itte r-B a se V olta g e v EBO 5.0 6.0 Vdc C o lle c to r C urrent >C 30 m Adc To tal D evice D issip a tio n @ T a = 25°C
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2N930,
2N930
2N930A
O-206AA)
3b7554
b3b7554
2n930
2N930A
A-2N930
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BUS36
Abstract: BUS37 BUS37 MOTOROLA transistor 3-440 MARK B3L
Text: M O T O R O L A SC -CXSTRS/R F} I" ' 6367254 MOTÖ RO LA D^|t,3b7ESM SC' X S T R S / R F 96D -80706 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 12 A M PER ES SWITCHMODE llA SERIES NPN SILICON POWER TRANSISTORS NPN SILICON POWER TRANSISTORS The BU S36 and BUS37 transistors are designed for low voltage,
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BUS37
BUS36
BUS37 MOTOROLA
transistor 3-440
MARK B3L
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