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    IRF8 Price and Stock

    Infineon Technologies AG IRF8736TRPBF

    MOSFET N-CH 30V 18A 8SO
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    DigiKey IRF8736TRPBF Cut Tape 27,984 1
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    IRF8736TRPBF Digi-Reel 27,984 1
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    Avnet Americas IRF8736TRPBF Reel 60,000 12 Weeks 4,000
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    Mouser Electronics IRF8736TRPBF 12,383
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    IRF8736TRPBF Cut Strips 2,732 12 Weeks 1
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    Rochester Electronics IRF8736TRPBF 3,639 1
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    Chip One Stop IRF8736TRPBF Cut Tape 83,199
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    EBV Elektronik IRF8736TRPBF 13 Weeks 4,000
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    Infineon Technologies AG IRF8788TRPBF

    MOSFET N-CH 30V 24A 8SO
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    DigiKey IRF8788TRPBF Digi-Reel 6,633 1
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    IRF8788TRPBF Reel 4,000 4,000
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    Arrow Electronics IRF8788TRPBF 8,000 12 Weeks 4,000
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    IRF8788TRPBF Cut Strips 2,730 12 Weeks 1
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    Newark IRF8788TRPBF Cut Tape 4,741 1
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    RS IRF8788TRPBF Bulk 10
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    EBV Elektronik IRF8788TRPBF 40,000 13 Weeks 4,000
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    New Advantage Corporation IRF8788TRPBF 32,000 1
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    Win Source Electronics IRF8788TRPBF 21,900
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    UMW IRF8736TR

    MOSFET N-CH 30V 18A 8SOIC
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    DigiKey IRF8736TR Reel 3,000 3,000
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    IRF8736TR Cut Tape 3,000 1
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    IRF8736TR Digi-Reel 3,000 1
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    UMW IRF8707TR

    MOSFET N-CH 30V 11A 8SOIC
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    DigiKey IRF8707TR Reel 3,000 3,000
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    IRF8707TR Digi-Reel 3,000 1
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    IRF8707TR Cut Tape 3,000 1
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    Vishay Siliconix IRF830APBF

    MOSFET N-CH 500V 5A TO220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IRF830APBF Tube 2,386 1
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    RS IRF830APBF Bulk 1,000
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    Find more IRF8 price and stock on Findchips.com

    IRF8 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRF8010 International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF
    IRF8010 International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRF8010 with Standard Packaging Original PDF
    IRF8010L International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; IRF8010L Original PDF
    IRF8010L International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF8010L International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original PDF
    IRF8010LPBF International Rectifier Original PDF
    IRF8010LPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRF8010L with Lead-Free packaging. Original PDF
    IRF8010PBF International Rectifier Original PDF
    IRF8010PBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRF8010 with Lead Free Packaging Original PDF
    IRF8010S International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; IRF8010S Original PDF
    IRF8010S International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package Original PDF
    IRF8010S International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package Original PDF
    IRF8010SPBF International Rectifier Original PDF
    IRF8010SPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF8010S with Lead-Free packaging. Original PDF
    IRF8010STRLPBF International Rectifier Original PDF
    IRF8010STRLPBF International Rectifier 100V Single N-Channel HEXFET Power MOSFET in a D2Pak package; Similar to IRF8010STRL with Lead-Free packaging. Original PDF
    IRF8010STRRPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 80A D2PAK Original PDF
    IRF810 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRF8113 International Rectifier Power MOSFET Original PDF
    IRF8113GPBF International Rectifier FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 17.2A SO-8 Original PDF
    ...

    IRF8 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    IRF820PBF

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF820PBF PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF820S, SiHF820S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF820S, SiHF820S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    MH 1004 SMPS

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF830A, SiHF830A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MH 1004 SMPS PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    D 92 M - 02 DIODE

    Abstract: No abstract text available
    Text: IRF820, SiHF820 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 3.0 Qg (Max.) (nC) 24 • Fast Switching Qgs (nC) 3.3 • Ease of Paralleling 13 • Simple Drive Requirements


    Original     		IRF820, SiHF820 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 D 92 M - 02 DIODE PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		IRF840S, SiHF840S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    any circuit using irf830

    Abstract: No abstract text available
    Text: IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF830, SiHF830 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 any circuit using irf830 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 0.85 39 Qgs (nC) 10 Qgd (nC) 19 Configuration Single COMPLIANT This new series of low charge Power MOSFETs achieve


    Original     		IRF840LC, SiHF840LC 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    IRF830B

    Abstract: No abstract text available
    Text: IRF830B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness


    Original     		IRF830B O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF830B PDF

    power supply IRF830 APPLICATION

    Abstract: power MOSFET IRF830 irf830 datasheet IRF830
    Text: DC COMPONENTS CO., LTD. IRF830 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 500 Volts RDS on = 1.5 Ohms ID = 4.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements


    Original     		IRF830 O-220AB power supply IRF830 APPLICATION power MOSFET IRF830 irf830 datasheet IRF830 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF830A, SiHF830A 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94883 IRF840LCPbF • Lead-Free Document Number: 91067 12/11/03 www.vishay.com 1 IRF840LCPbF Document Number: 91067 www.vishay.com 2 IRF840LCPbF Document Number: 91067 www.vishay.com 3 IRF840LCPbF Document Number: 91067 www.vishay.com 4 IRF840LCPbF Document Number: 91067


    Original     		IRF840LCPbF O-220AB 12-Mar-07 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94979 IRF820PbF • Lead-Free Document Number: 91059 02/03/04 www.vishay.com 1 IRF820PbF Document Number: 91059 www.vishay.com 2 IRF820PbF Document Number: 91059 www.vishay.com 3 IRF820PbF Document Number: 91059 www.vishay.com 4 IRF820PbF Document Number: 91059


    Original     		IRF820PbF O-220AB 12-Mar-07 PDF

    IRF8113

    Abstract: F7101 IRF7101
    Text: PD - 94637 IRF8113 HEXFET Power MOSFET Applications l Synchronous MOSFET for Notebook Processor Power l Synchronous Rectifier MOSFET for Isolated DC-DC Converters in Networking Systems Benefits l Very Low RDS on at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage


    Original     		IRF8113 EIA-481 EIA-541. IRF8113 F7101 IRF7101 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V RoHS* Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.3 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		IRF840, SiHF840 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A PDF

    MOSFET IRF 540 AS A SWITCH

    Abstract: No abstract text available
    Text: PD- 94829 IRF840APbF SMPS MOSFET HEXFET Power MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic


    Original     		IRF840APbF AN1001) O-220AB 08-Mar-07 MOSFET IRF 540 AS A SWITCH PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement Available • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF840A, SiHF840A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: IRF830A, SiHF830A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Available Requirement • Improved Gate, Avalanche and Dynamic dV/dt RoHS* COMPLIANT Ruggedness • Fully Characterized Capacitance and Avalanche Voltage


    Original     		IRF830A, SiHF830A 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: PD- 95759 IRF840LCSPbF IRF840LCLPbF • Lead-Free Document Number: 91068 8/24/04 www.vishay.com 1 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number: 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number: 91068 www.vishay.com


    Original     		IRF840LCSPbF IRF840LCLPbF IRF840LCS/LPbF 08-Mar-07 PDF

    9571

    Abstract: AN609 IRF830S SiHF830S
    Text: IRF830S_RC, SiHF830S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		IRF830S SiHF830S AN609, 18-Mar-10 9571 AN609 PDF

    SiHF820AL

    Abstract: IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3
    Text: IRF820AS, SiHF820AS, IRF820AL, SiHF820AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Low Gate Charge Qg Results in Simple Drive Requirement 500 RDS(on) (Max.) (Ω) VGS = 10 V 3.0 Qg (Max.) (nC) 17 Qgs (nC) 4.3 Qgd (nC) 8.5 Configuration


    Original     		IRF820AS, SiHF820AS IRF820AL, SiHF820AL O-263) O-262) 18-Jul-08 IRF820A IRF820AL IRF820AS SiHF820A SiHF820AL-E3 PDF

    IRF8010

    Abstract: IRF1010 AN1001
    Text: PD - 94497 IRF8010 SMPS MOSFET Applications High frequency DC-DC converters UPS and Motor Control Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, See App. Note AN1001


    Original     		IRF8010 AN1001) O-220AB O-220 IRF8010 IRF1010 AN1001 PDF

    IRF820AS

    Abstract: AN-994 IRF820A IRF820AL diode SS 16
    Text: PD- 93774A IRF820AS IRF820AL SMPS MOSFET HEXFET Power MOSFET Applications Switch Mode Power Supply SMPS l Uninterruptable Power Supply l High speed power switching l Benefits Low Gate Charge Qg Results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic


    Original     		3774A IRF820AS IRF820AL O-262 Di52-7105 IRF820AS AN-994 IRF820A IRF820AL diode SS 16 PDF

    4N50

    Abstract: IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431
    Text: FAIRCHILD SEMICONDUCTOR A4 DE I 34L.TL7L} D O a ? i n IRF430-433/IRF830-833 M TM /M TP4N45/4N50 N-Channel Power MOSFETs, 4.5 A, 450 V /500 V FA IR C H ILD B H O H B H B A Schlumberger Company Power And Discrete Division Description T—39—11 TO-204AA TO-22QAB


    OCR Scan     		34tclt 0e7117 IRF430-433/IRF830-833 MTM/MTP4N45/4N50 t-39-11 O-22QAB IRF430 IRF431 IRF432 IRF433 4N50 IRF830 irf4321 MTP4N45 IRF430 IRF 5054 MTP4N50 MTM4N50 MK48Z02B-20 IRF431 PDF