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Harris Semiconductor IRF420
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International Rectifier IRF420 Electronic Component
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International Rectifier IRF420BV IR IRF420BV
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International Rectifier JIRF42013 IR JIRF42013 UNINSPECTED WAFER 1 PC
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IRF420 Datasheets (20)

Part	Manufacturer	Description	Datasheet Type	PDF
IRF420	Harris Semiconductor	Power MOSFET Selection Guide	Original	PDF
IRF420	Intersil	2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 ?, N-Channel Power MOSFETs	Original	PDF
IRF420	Fairchild Semiconductor	N-Channel Power MOSFETs, 3.0 A, 450 V/500 V	Scan	PDF
IRF420	FCI	POWER MOSFETs	Scan	PDF
IRF420	Frederick Components	Power MOSFET Selection Guide	Scan	PDF
IRF420	General Electric	N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.5A.	Scan	PDF
IRF420	Harris Semiconductor	Power MOSFET Data Book 1990	Scan	PDF
IRF420	International Rectifier	TO-3 N-Channel HEXFETs	Scan	PDF
IRF420	International Rectifier	N-Channel Power MOSFETs	Scan	PDF
IRF420	International Rectifier	TO-3 N-Channel	Scan	PDF
IRF420	Motorola	European Master Selection Guide 1986	Scan	PDF
IRF420	Unknown	Shortform Datasheet & Cross References Data	Short Form	PDF
IRF420	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
IRF420	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF

IRF420	Unknown	FET Data Book	Scan	PDF
IRF420	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF420	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
IRF420	Samsung Electronics	N-CHANNEL POWER MOSFETS	Scan	PDF
IRF420	Siliconix	MOSPOWER Design Data Book 1983	Scan	PDF
IRF420-423	Fairchild Semiconductor	N-Channel Power MOSFETs 3.0 A 450 V/500 V	Scan	PDF

IRF420 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF420 Abstract: IRF422 TB334 IRF421 IRF423 Text: IRF420, IRF421, IRF422, IRF423 Semiconductor 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRF420, IRF421, IRF422, IRF423 IRF420 IRF422 TB334 IRF421 IRF423	PDF
Untitled Abstract: No abstract text available Text: IRF420, IRF421, IRF422, IRF423 S E M I C O N D U C T O R 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2A and 2.5A, 450V and 500V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power	Original	IRF420, IRF421, IRF422, IRF423 TA17405.	PDF
IRF460 Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065 Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,	Original	30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065	PDF
sn76131 Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157	Original	2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B	PDF
9323h Abstract: IRF420 IRF422 IRF421 g149 Text: HE 0 I MäSSMSa O G C n ib b "1 I Data Sheet No. PD-9.323H INTERNATIONAL R E C T I F I E R V - INTERNATIONAL. RECTIFIER ? ? -// IO R REPETITIVE AVALANCHE AND dv/dt RATED' H E X F E T IRF420 IRF421 IRF422 IRF4S3 T R A N S IS T O R S :n N-CHANNEL 500 Volt, 3.0 Ohm HEXFET	OCR Scan	IRF420 IRF421 IRF422 T0-204AA G-149 IRF420, IRF421, IRF422, IRF423 G-150 9323h g149	PDF
IRF449 Abstract: irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441 Text: - 25 2 - Mi m ± « % Vds Vg s or Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR	OCR Scan	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF449 irf362 irf413 IRF352 IRF353 IRF360 IRF421 IRF430 IRF433 IRF441	PDF
IRF423 Abstract: ir*420 SM 3117 circuit diagram IRF420 IRF421 IRF422 Text: Standard Power MOSFETs IRF420, IRF421, IRF422, IRF423 File N u m b e r 1571 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 2.0A and 2.5A, 450V-500V rDs on = 3.0 O and 4.0 fi Features:	OCR Scan	IRF420, IRF421, IRF422, IRF423 50V-500V IRF422 IRF423 IF422 ir*420 SM 3117 circuit diagram IRF420 IRF421	PDF
2n50 Abstract: irf420 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF421 IRF422 IRF423 Text: FAIRCHILD SEMICONDUCTOR Û 4 D E j l 3 4 h cl t i 7 4 G D B T im IRF420-423/IRF820-823 r - i U f MTP2N45/2N50 N-Channel Power MOSFETs, 3.0 A, 450 V /50 0 V F A IRCHILD • M a n B B B H B M I A Schlumberger Company Power And Discrete Division_	OCR Scan	IRF420-423/IRF820-823 MTP2N45/2N50 O-204AA IRF420 IRF421 IRF422 IRF423 O-220AB IRF820 IRF821 2n50 IRF820 MTP2N45 ST 2N50 1rf820 mtp2n50 IRF423	PDF
1RF620 Abstract: 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421 Text: - 252 - Mi m ± « % Vds Vg s or Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR	OCR Scan	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA 1RF620 1RF530 1rf521 1rf630 IRF449 RF543 irf362 IRF352 IRF353 IRF421	PDF
f422 Abstract: No abstract text available Text: IRF420, IRF421 IRF422, IRF423 g HARRIS N-Channel Enhnancement Mode Power Field-Effect Transistors August 1991 Features Package T O -20 4 A A BOTTOM VIEW • 2.2A and 2.5A, 450V - 500V • rD S (°n = 3-Oil and 4 .0 ÎÎ • SOA is Power-Dissipation Limited	OCR Scan	IRF420, IRF421 IRF422, IRF423 IRF421, IRF423 f422	PDF
Untitled Abstract: No abstract text available Text: - Z a ê A i^ ^ S A M S U N ^ ^fi íP k n r n M n i i r 'T n R DE~J 7 T b 4m S 98D Tw n-—- v ODDSIST T \| - 05129 D7-3?~f/ N-CHANNEL POWER MOSFETS IRF420/421 /422/423 FEA TU R ES Low Ros on at high voltage Improved inductive ruggedness. Excellent high voltage stability	OCR Scan	IRF420/421 IRF420 IRF421 IRF422 IRF423 00GS435 F--13	PDF
IRF360 Abstract: irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441 Text: - 252 - Mi m ± « % Vds Vg s or Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR	OCR Scan	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF360 irf362 IRF448 IRF449 IRF352 IRF353 IRF421 IRF430 IRF433 IRF441	PDF
IRF411 Abstract: IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421 Text: - 252 - Mi m ± « % Vds Vg s or Vd g % 1RF35! IRF353 IR !R IR IRF360 IRF362 IRF420 IRF421 IRF422 IRF423 IRF430 IRF431 IRF432 IRF433 IRF440 IRF441 IRF442 IRF443 IRF448 IRF449 IRF450 IRF451 IRF452 IRF453 IRF460 IRF462 IRF510 IR IR IR IR IR IR IR IR IR IR	OCR Scan	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 O-3150 O-204AA IRF411 IRF449 1RF540 irf413 1RF620 1rf520 irf362 IRF352 IRF353 IRF421	PDF
IRF420 Abstract: Z964 IRF421 IRF422 IRF423 spus mosfet n-channel 12 amperes Text: Z B 3A 1 4_2._SAMS.UN« •-• TrnKini if'Tnp 98D Ve I TTtmMS ODDSIS^ T •• •' 0 5 1 2 9 _ D_ T Z ß J r . f / ' N _C H A N N E L I IRF420/421Z422/423 POWER MOSFETS F EA TU R ES • • • • • • • • • Low Ros on at high voltage Improved inductive ruggedness.	OCR Scan	IRF420/421 IRF420 IRF421 IRF422 IRF423 45Cras-Cfld Z964 spus mosfet n-channel 12 amperes	PDF

RF432 Abstract: IRF449 IRF460 IRFac32 Text: International ID o H l f i û r [t S HEXFFT MOSFETs r ^ « e c im e r Hermetic Package 7Ü-3 N-Channel Part Number V q s Drain Source Voltage Volts IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 IRF450 2N6770 IRF462 IRF460 500 IRFAC32	OCR Scan	IRF422 IRF420 /RF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 RF432 IRF460 IRFac32	PDF
F421 Abstract: IRF423 Text: iH A R R is IRF420, IRF421, IFJF422 IF^F423 s e m i c o n d u c t o r 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.2 A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate	OCR Scan	IRF420, IRF421, TA17405. IFJF422 RF422, RF423 F421 IRF423	PDF
ED 83 Abstract: No abstract text available Text: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)	OCR Scan	IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 ED 83	PDF
IRF448 Abstract: IRF449 irf9243 IRFAG52 IRFAF30 irf420 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE Text: THONSON/ DISTRIBUTOR SflE D • TD5t,fl73 DDDSflOfl T4b ■ TCSK W ggggg H EX FETw »«, — r c e c u iie r Hermetic Package l TO-3 N-Channel Part Number V p s Drain Source Voltage Volts IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452	OCR Scan	IRF422 IRF420 IRF432 2N6762 IRF430 IRF442 IRF440 IRF449 IRF448 IRF452 irf9243 IRFAG52 IRFAF30 IRF460 IRF9140 THOMSON 58E THOMSON 58E CASE OUTLINE	PDF
Untitled Abstract: No abstract text available Text: tyvvys S IRF420, IRF421, IRF422, IRF423 Semiconductor y y 2.2k and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channei Power MOSFETs July 1998 Features Description • 2.2A and 2.5A, 450V and 500V • Majority Carrier Device These are N-Channel enhancement mode silicon gate	OCR Scan	IRF420, IRF421, IRF422, IRF423	PDF
DATA SHEET IRF331 Abstract: IRF540 IRF44 VN2410M IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF IVN6200CNH Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o \| I O O I I I P I I I \| I ' < O Ò ' ' ' lO ' ' ' ' ' I o o r i mm \| ioom m I I j j CO 00 CO CO j j ' L -^ ^ l I I c\i CM i	OCR Scan	IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D DATA SHEET IRF331 IRF540 IRF44 VN2410M IVN6200CNH	PDF
irf840 Abstract: equivalent irf840 irf840 equivalent irf840 rf MTM3N55 IRF533 IVN6100TNU IVN6200CND IVN6200CNE IVN6200CNF Text: 1-17 MOSPOWER Cross Reference List c « ss <0J= P fi g c i n i n m i n • - CM CM CM ^ I m iD lO m • 'd d d o d ' r r r ' s 1o o o o o \| I O O I I I P I I I \| I o o r i mm \| ioom m I ' < O Ò ' ' ' lO ' ' ' ' ' L -^ ^ l I c\i CM i I I j j CO 00 CO CO j	OCR Scan	IVN6100TNU IVN6200CND O-220 VN0401D IVN6200CNE T0-220 IRF533 IVN6200CNF VN0801D irf840 equivalent irf840 irf840 equivalent irf840 rf MTM3N55	PDF
irf411 Abstract: IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430 Text: - 252 - Mi X m % ± « % Vd s or Vdg V £ Vg s Pd Id * /CH (V) 11 fé (Ta= 25 tJ) (A) Vg s th) I d ss I g ss * /CH <W) min (nA) Vg s (V) (u A ) Vd s (V) (V) Id («A ) fó f Ds(on) Vrs= Vg s max (V) % te (Ta=25cO ) I d ( on) C i ss g fs Coss C rss % &	OCR Scan	Ta-25 IRF352 IRF353 IRF360 O-204AE IRF362 TQ-204AE IRF421 IRF448 TQ-204AA irf411 IRF413 IRF449 IRF448 irf362 IRF352 IRF353 IRF360 IRF421 IRF430	PDF
1RF321 Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452 Text: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350	OCR Scan	IRF450 IRF452 IRF440 IRF442 VNP002A* VN5001A IRF430 VN5002A IRF432 IRF420 1RF321 IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452	PDF
1RF820 Abstract: VN64GA VN2410M IRF340 IRF350 IRF440 IRF450 IRF740 IRF820 IRF840 Text: Ü Ü A C D ^ U / C D M i v i a Dr/\W i iv i v ^ i v T T k iv r i i i i i v t i v u v i w i C A lA A ^ / \ r f^ .n \M é g ^ i ^ v i v i w u iv i^ 1-2 MOSPOWER Prime Product Selector Guide *2 0 0 °C RATING I i Packages: u BVqss Volts 450-500 TO-3 TO-220	OCR Scan	O-220 O-237 O-202 IRF450 IRF840 IRF440 VN5001D/IRF830 VNP002A* IRF820 VN5001A/IRF430 1RF820 VN64GA VN2410M IRF340 IRF350 IRF740	PDF

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IRF420 Datasheets (20)

IRF420 Datasheets Context Search

IRF420

Untitled

IRF460

sn76131

9323h

IRF449

IRF423

2n50

1RF620

f422

Untitled

IRF360

IRF411

IRF420

RF432

F421

ED 83

IRF448

Untitled

DATA SHEET IRF331

irf840

irf411

1RF321

1RF820