IRF340 Search Results

IRF340

Abstract: TA17424 to204ae TB334
Contextual Info: IRF340 Data Sheet March 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET • 10A, 400V • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance

IRF341R

Abstract: IRF343 IRF340R IRF342R IRF343R
Contextual Info: Rugged Power MOSFETs _ IRF340R, IRF341R, IRF342R, IRF343R File N u m b e r 2005 Avalanche Energy Rated N-Channel Power MOSFETs 10A and 8A, 400V and 350V rDS on = 0.550 and 0.80fi N -C H A N N E L E N H A N C E M E N T M O D E Features: • Single pulse avalanche energy rated

MTP8N45

Contextual Info: MOTOROLA SC XSTRS/R D I• b3b?as4 aoâibîB a ime F I T-ÌÌ-I3 MOTOROLA ■ I SEM ICO NDUCTO R TECHNICAL DATA IRF340 Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TM O S POWER FIELD EFFECT TRANSISTOR IRF340 V d SS 400 V rDS on >D 0.55 n 10 A This TM O S Power FET is designed for high voltage, high speed

Contextual Info: • 4 3 0 5 3 7 1 0 0 5 3 ^ 4 3 HARRIS 1T4 ■ HAS IR F340/341/342/343 IRF340R/341R/342R/343R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A • 10A and 8.3A , 4 0 0 V - 3 5 0 V B O T T O M V IE W • rD S on = 0 .5 5 0 and 0 .8 0 H

IRF340

Contextual Info: $GYDQFHG 3RZHU 026 7 IRF340 FEATURES BVDSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 0.55Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 11 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V

IRF340

Abstract: IRF341 IRF342 IRF343 RC9S
Contextual Info: Standard Power MOSFETs- IRF340, IRF341, IRF342, IRF343 File N um ber Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors 8 A and 10 A, 350 V - 400 V rDscom = 0.55 O and 0.8 O

Contextual Info: IRF340 A d van ced Power MOSFET FEATURES B V DSS - 400 V ^D S o n = 0 .5 5 Î2 ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area TO-3P ♦ Lower Leakage Current: 10(j,A (Max.) @ V DS = 400V

IRF34

Abstract: IRF340 IRF341 IRF342 IRF343 6Z64
Contextual Info: - 7 964 142 S A M S U N G S E M I C O N D U C T O R Tfi ¡>F| 7 ^ 4 1 4 3 DGDSin t, | INC 9 8 D O 51 1 9 . - D T -3 f-'/3 N-CHANNEL POWER MOSFETS IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .

T0204AA

Contextual Info: IRF640 IRF641 IRF642 IRF340 IRFP340 IRF341 IRFP341 IRF740 IRF741 IRF742 IRF743 IRFP440 IRF441 60 1600 750 300 E2 10 60 1600 750 300 E2 0.22 10 60 1600 750 300 E2 0.25 0.22 10 60 1600 750 300 E2 4 0.25 0.55 5 60 1600 450 150 E3 2 4 0.25 0.55 5 60 1600 450 150

743 LEM

Abstract: IRF340 fairchild 741 741 LEM 8N40 fairchild 742 IRF341 IRF342 IRF343 AM/amplifier LEM 741
Contextual Info: A4 FAIRCHILD s e m i c o n d u c t o r dÊ J 34^74 DDETTDS 1 IRF340-343/IRF740-743 T - ì 1 MTM8N35/8N40 N-Channel Power M O SFET s, 10 A, 350 V/400 V F A IR C H IL D A Schlumberger Company Power And Discrete Division Description TO-204AA TO-220AB IRF340 IRF341

DIODE S4 83A

Abstract: irf340 DIODE M4A IRF34
Contextual Info: HE 0 I MflSS4S5 0 DOT 14 4 Q | Data Sheet No. PD-9.371F INTERNATIONAL R E C T I F I E R - Ì Y - f 3 INTERNATIONAL- RECTIFIER IO R REPETITIVE AVALANCHE AND dv/dt RATED* IRF340 IRF341 IRF342 IRF343 HEXFET TRANSISTORS 400 VOLT, 0.55 Ohm HEXFET TO-204AA TO-3 Hermetic Package

Contextual Info: ^EtnL-donductoi ^Products., One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary

IRF341

Contextual Info: iH A R R is SEMIC0NDUCT0R IRF340, IRF341 IRF342, IRF343 10A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 10A and 8.3A, 400V and 350V • Linear Transfer Characteristics The IRF340, IRF341, IRF342, and IRF343 are N-Channel

Contextual Info: IRF340 Advanced Power MOSFET FEATURES B ^ dss - 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n = 0 -5 5 Q ♦ Lower Input Capacitance lD = 11 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

Contextual Info: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA IRF340 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR Part Number V DSS rDS on» <d IRF340 400 V 0.55 n 10 A This TM O S Pow er FET is d esigned fo r h ig h volta g e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g re g u lators, co n ­

IRF3401

Abstract: IRF340
Contextual Info: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90371 IRF340 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF340 BVDSS RDS(on) 400V 0.55Ω ID 10A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors.

power mosfet j 162

Abstract: n-channel 250V power mosfet IRF340
Contextual Info: IRF340 A dvanced Power MOSFET FEATURES B V DSS = 400 V ^ D S o n = 0 .5 5 a ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance Id ♦ Improved Gate Charge = 1 1 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|xA (Max.) @ V DS = 400V

f341

Abstract: 2S1214
Contextual Info: Tfi 7 9 6 4 142 SAMSUNG ¡> F | 7 ^ 4 1 4 3 SE M IC O N D U C T O R D G D S in t, | .9 8 D O 51 1 9 I NC D T -3 f-'/3 N-CHANNEL POWER MOSFETS . - IRF340/341/342/343 FEATURES • L o w R DS on • Improved inductive ruggedness Fast switching times .

Contextual Info: IRF340 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6.0 @Temp (øC)100 IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55

Contextual Info: IRF340R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)10 I(DM) Max. (A) Pulsed I(D)6.3 @Temp (øC)100 IDM Max (@25øC Amb)40 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55õ

IRF460

Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
Contextual Info: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157