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    INTERNATIONAL RECTIFIER TRANSISTOR Search Results

    INTERNATIONAL RECTIFIER TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    INTERNATIONAL RECTIFIER TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IRGPC56

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER SbE D • 4fl5S45S OOlDbaT 1 ■ Data Sheet No. PD<9.662 T - 3^-63 \. INSULATED GATE BIPOLAR TRANSISTOR International Rectifier IRGPC56 600V, 7SA 600V, 75A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF 4fl5S45S IRGPC56 O-247AC 554S2 0G10b43 IRGPC56

    IRGPC46

    Abstract: 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d
    Text: INTERNATIONAL RECTIFIER 4055452 OOlOba? 2 2bE D Data Sheet No. PD-9.663 INSULATED GATE BIPOLAR TRANSISTOR T- 3 °[ -03 International g*»]Rectifier IRGPC46 BOOV, BO A FEATURES 600V, 60A, TO-247AC IGBT International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF O-247AC IRGPC46 10a 100v bipolar transistor mosfet induction heater S101 SS452 VQE 21 d

    Q405

    Abstract: vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e
    Text: INTERNATIONAL RECTIFIER EbE D 4055455 00105=11 7 • Data Sheet No. PD-9.669 T-3Ì-03 International Usi Rectifier INSULATED GATE BIPOLAR TRANSISTOR IRGBCS6 600V, 19A FEATURES 600V, 19A, TO-220AB IGBT International Rectifier’s IR G series o f Insulated Gate


    OCR Scan     		PDF Q01QS11 O-220AB Q405 vqe 24 d q405 transistor vqe 23 IRGBC26 TO220AB IGBT t303 3i03 a y8e

    Untitled

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2t>E D • HflSS4S2 QQ1DST7 S ■ Data Sheet No. PD-9.619A T-3^-03 INSULATED GATE BIPOLAR TRANSISTOR International I “ R !Rectifier IRGBC30 600V, S3A FEATURES 600V, 23A, TO-220AB IGBT International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF IRGBC30 O-220AB 4aSS452 T-31-Ã

    C528 transistors

    Abstract: C528 DIODE
    Text: INTERNATIONAL RECTIFIER 11E D | 4ÖSS4SS 0000774 Data Sheet No. PD-9.445A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER N-CHAIMNEL POWER MOSFETs TO-247AC PACKAGE 400 Volt, 0.30 Ohm HEXFET TO-247AC TO-3P Plastic Package R IRFP350 IRFP351 IRFP35S IRFP353


    OCR Scan     		PDF 075BV0SS C-527 IRFP350, IRFP351, IRFP352, IRFP353 T-39-15 C-528 C528 transistors C528 DIODE

    c628 DIODE

    Abstract: diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 IRFPG52 diode c630
    Text: INTERNATIONAL RECTIFIER HE D I 4flSS4SE Data Sheet No. PD-9.543A INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I 0 R REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS IRFPG5G IRFPG52 N-CHANNEL Product Summary 1000 Volt, 2.0 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF O-247AC C-631 IRFPG50, IRFPG52 T-39-15 C-632 c628 DIODE diode c626 DIODE c629 diode c631 c632 DIODE c630 diode 3g50 irf 2030 diode c630

    irgpc50

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2bE D • 4655455 001Db33 fl ■ Data Sheet No. PD-9.664 T-3R-C>3 INSULATED GATE BIPOLAR TRANSISTOR International iI<?RlRectifier IRGPC50 600V, 55A 600V, 55A, TO-247AC IGBT FEATURES International Rectifier’s IRG series of Insulated Gate


    OCR Scan     		PDF 001Db33 IRGPC50 O-247AC 5S452 0D10b37 S54S2 0Q10b3Ã irgpc50

    1117s

    Abstract: transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36
    Text: INTERNATIONAL RECTIFIER 4Ö5S4S2 00l0bQ3 T • 2t.E D Data Sheet No. PD-9.668 • 7 3*?-03 - - International ÜH Rectifier INSULATED GATE BIPOLAR TRANSISTOR BOOV, 34A FEATURES 600V, 34A, TO-220AB IGBT International R ectifier’s IR G series of Insulated G ate


    OCR Scan     		PDF 00l0bG3 O-220AB 1117s transistor wc 2C vqe 24 d TO220AB IGBT PHPI IRGBC36

    TR C458

    Abstract: transistors c458 IRFP040 IRFP042 C458 C C459 TIL 220 L740 c458 c455
    Text: INTERNATIONAL RECTIFIER INTERNATIONAL H E D I 4Ö55455 T-39-13 Data Sheet No. PD-9.463A RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IRFP040 IRFPQ42 N-CHANNEL POWER MOSFETs TO-S47AC PACKAGE Product Summary 50 Volt, 0.028 Ohm, HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF T-39-13 IRFP040 O-S47AC O-247AC 05BVDSS C-459 IRFP040, IRFP042 T-39-13 C-460 TR C458 transistors c458 IRFP040 C458 C C459 TIL 220 L740 c458 c455

    IRGAC50U

    Abstract: transistor G46 IGBT g48 ge 142 bt 34w
    Text: International Rectifier PD-9.726A IRGAC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd926a IRGAC50U 001flb5G IRGAC50U transistor G46 IGBT g48 ge 142 bt 34w

    ir*c30ud

    Abstract: IRGMC30U
    Text: International Ira*]Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC30U IRGMC30UD IRGMC30UU MIL-S-19500 O-254 ir*c30ud IRGMC30U

    g371

    Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
    Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International


    OCR Scan     		PDF T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371

    IRGBC-20

    Abstract: No abstract text available
    Text: INTERNATIONAL RECTIFIER 2bE D • ^ 5 5 4 5 2 QDlOSflS 1 ■ Data Sheet No. PD-9.626A T- INSULATED GATE BIPOLAR TRANSISTOR -03 International @ ^ 3 Rectifier IR G B C SO GOOV, 1 3 A FEATURES 600V, 13A, T0-220AB IGBT International Rectifier's IRG series of Insulated Gate


    OCR Scan     		PDF T0-220AB IRGBC20 IRGBC-20

    Untitled

    Abstract: No abstract text available
    Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500

    IR 92 0151

    Abstract: IRGAC40F IRGAC40 transistor g23
    Text: International TOR PD-9.723A ]Rectifier IRGAC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC40F IR 92 0151 IRGAC40 transistor g23

    2sc 1740 TRANSISTOR equivalent

    Abstract: 40HFL60 IRGMC40F 480V1
    Text: International Hg] Rectifier PD-9.716A IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF pd96a IRGMC40F IRGMC40FD IRGMC40FU MIL-S-19500 O-254 2sc 1740 TRANSISTOR equivalent 40HFL60 IRGMC40F 480V1

    100-C

    Abstract: IRGMC30F 9714A
    Text: International ioR Rectifier PD-9.714A IRGMC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC30F IRGMC30FD IRGMC30FU mil-s-19500 O-254 100-C IRGMC30F 9714A

    IRGAC50F

    Abstract: G37 IC J3060 transistor g35 ecs g41 IRGAC50
    Text: International lü ] Rectifier PD-9.725A IRGAC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC50F 40HFL60 S54S5 lflb43 SS452 lflb44 G37 IC J3060 transistor g35 ecs g41 IRGAC50

    transistor 9721

    Abstract: 9721 mosfet to3
    Text: International S Rectifier PD-9.721 A IRGAC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGAC30F DD10bl5 transistor 9721 9721 mosfet to3

    IRGMC50F

    Abstract: IRGMC50FD IRGMC50FU 39AF
    Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF

    T3D 87

    Abstract: t3d 99 G-100 IRGMC50U
    Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while


    OCR Scan     		PDF IRGMC50U IRGMC50U IRGMC50UD IRGMC50UU MIL-S-19500 O-254 G-105 T3D 87 t3d 99 G-100

    f422

    Abstract: transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba
    Text: HE D I 4055452 INTERNATIONAL 0001400 2 | Data Sheet No. PD-9.358E RECTIFIER INTERNATIONAL RECTIFIER TOR T-39-09 HEXFET TRANSISTORS IRFF4SQ IRFF421 N-CHANNEL POWER MOSFETs TO-3S PACKAGE Q [I IRFF4SS IRFF4S3 500 Volt, 3.0 Ohm HEXFET Features: T he HEXFET® technology is the key to International


    OCR Scan     		PDF 0GGci400 T-39-09 G-382 f422 transistor f422 tr f422 G-377 IRFF423 358E IRFF420 IRFF421 IRFF422 420 Diode 2ba

    Untitled

    Abstract: No abstract text available
    Text: International S Rectifier PD-9.715A IRGMC30U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Description Product Summary Insulated G ate Bipolar Transistors IGBTs from International Rectifier have higher current d en ­ sities than com parable bipolar transistors, while


    OCR Scan     		PDF IRGMC30U IRGMC30UD IRGMC30UU O-254 4flS5455 001flb73

    h253

    Abstract: IRHM8450 T600 12 23 2N7270 IRHM7450 iA109 SN7570
    Text: Data Sheet No. PD-9.673B INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IRHM7450 IRHM8450 N-CHANNEL SN7S70 JANSRSN7570 JANSHSN7S70 _MEGA RAD HARD 500 Volt, 0.45Q, MEGA RAD HARD HEXFET International Rectifier’s M E G A RAD HARD Technology HEXFETs


    OCR Scan     		PDF IRHM7450 IRHM8450 SN7570 JANSR2N7570 JANSHSN7S70 1x106 IRHM7450D IRHM7450U O-254 h253 IRHM8450 T600 12 23 2N7270 iA109