Untitled
Abstract: No abstract text available
Text: IRGMC50UD Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.16
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IRGMC50UD
delay24nÃ
time27nÃ
time180nÃ
me27nÃ
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Untitled
Abstract: No abstract text available
Text: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
O-254
IRGMC50UD
IRGMC50UU
G-105
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T3D 87
Abstract: t3d 99 G-100 IRGMC50U
Text: International [^Rectifier PD-9.719A IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT D escription Product Sum m ary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while
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IRGMC50U
IRGMC50U
IRGMC50UD
IRGMC50UU
MIL-S-19500
O-254
G-105
T3D 87
t3d 99
G-100
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