IRGMC50F Search Results

IRGMC50F Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IRGMC50F		International Rectifier	Insulated Gate Bipolar Transistor		Original	PDF
IRGMC50F		International Rectifier	IGBT		Scan	PDF
IRGMC50F		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

IRGMC50F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IRF 260 N Abstract: MOSFET 1000v 30a IRGMC50F Text: PD -90718B IRGMC50F Fast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • • • • • C Electrically Isolated and Hermetically Sealed Simple Drive Requirements Latch-proof Fast Speed operation 3 kHz - 8 kHz Switching-loss rating includes all "tail" losses	Original	-90718B IRGMC50F O-254AA. MIL-PRF-19500 IRF 260 N MOSFET 1000v 30a IRGMC50F	PDF
Untitled Abstract: No abstract text available Text: IRGMC50FU Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.21	Original	IRGMC50FU delay25nÃ time49nÃ time440nÃ me49nÃ	PDF
Untitled Abstract: No abstract text available Text: IRGMC50F Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V) I(C) Max. (A)35 Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case.83 Thermal Resistance Junc-Amb.48 g(fe) Min. (S) Trans. admitt.21	Original	IRGMC50F delay25nÃ time49nÃ time440nÃ ime49nÃ	PDF
10RIA10 Abstract: HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF Text: Index International Rectifier Government and Space Products Level of Quality Part Number Rectifiers Voltage Current CECC Issue Issue Assessment and CECC V (A) Specs Number Date 50 000 Screen Level Options Fax-on-Demand CECC-Qualifed, Europe Mfg. in Italy	Original	DO-203AA HFA40HF120 HFA40HF60 O-254AA HFA35HB120 HFA35HB120C HFA35HB60 HFA35HB60C O-258AA HFA45HC120C 10RIA10 HFA40HF120 irfm9034 10RIA100 10RIA120 10RIA20 10RIA40 10RIA60 JANSR2N7261 70HF	PDF
2N6764 JANTX Abstract: 91447 IR2113L Text: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450	Original	IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450 IRH7450SE 2N6764 JANTX 91447 IR2113L	PDF
2N6782 JANTX Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE	Original	IRH7054 Oct-96 IRH7150 IRH7250 IRH7450SE Nov-96 IRH8054 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX	PDF
IRGMC50F Abstract: IRGMC50FD IRGMC50FU 39AF Text: International S S Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU MIL-S-19500 O-254 IRGMC50F IRGMC50FU 39AF	PDF
IG22 Abstract: IRGAC50U Text: Government and Space Other Products from IR IGBT Hermetic Packages 6 0 0 - 1200V V BR CES v GE(th) MIN (V) (V) Part Number IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U IRGMC30F IRGMC30U IRGMC40F IRGMC40U IRGMC50F IRGMC50U 600 3.0 Ej s TY P ic @ •c@	OCR Scan	IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U T0-204AE IRGMC30F IRGMC30U IRGMC40F IG22 IRGAC50U	PDF
Untitled Abstract: No abstract text available Text: International ! r]Rectifier PD-9.718A IRGMC50F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den sities than comparable bipolar transistors, while	OCR Scan	IRGMC50F IRGMC50FD IRGMC50FU O-254 4fiSS45S MIL-S-19500	PDF
IRGAC50 Abstract: MO036AA IRGAC50U IRGAC50F Text: HU m saa In t e r n a t i o n a l R e c t i f i e r Government and Space Products Control Integrated Circuits Vs Offset Supply Voltage Volts PMt Number Fax-onDemand Number lOUT VBS.VCC SupplyVoltage (Volts) Slnk, Source (Amps) Case Style, (CaseOutline) (1)	OCR Scan	IR2110E IR2110E6 IR2110L IR2110L6 IR2125Z 10to20 250mA IRGAC50 MO036AA IRGAC50U IRGAC50F	PDF
Ig21 Abstract: No abstract text available Text: International Government and Space ig b t HORlRecBfier Hermetic Packages 6 0 0 -1200V V BR CES Part Number (V) v GE(th) MIN (V) ic @ ic @ v GE(th) M AX TC = 25°C TC = 100°C (V) E t s TY P PD Max. Power Outline Tj = 125 Dissipation Number (m J) (A) IRGAC30F	OCR Scan	-1200V IRGAC30F IRGAC30U IRGAC40F IRGAC40U IRGAC50F IRGAC50U T0-204AE IRGMC30F IRGMC30U Ig21	PDF