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    IRFF330 Search Results

    IRFF330 Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IRFF330 International Rectifier HEXFET Transistor Original PDF
    IRFF330 Intersil 3.5A, 400V, 1.000 ?, N-Channel Power MOSFET Original PDF
    IRFF330 Semelab N-Channel MOSFET in a Hermetically Sealed TO39 Metal Package Original PDF
    IRFF330 General Electric Power Transistor Data Book 1985 Scan PDF
    IRFF330 Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF330 International Rectifier TO-39 Package N-Channel HEXFET Scan PDF
    IRFF330 International Rectifier TO-39 N-Channel HEXFET Power MOSFETs Scan PDF
    IRFF330 International Rectifier N-Channel Power MOSFETs Scan PDF
    IRFF330 International Rectifier N-Channel Power MOSFET in a TO-39 package 400 Volts, 1.0 Ohm Scan PDF
    IRFF330 Motorola European Master Selection Guide 1986 Scan PDF
    IRFF330 Motorola N-Channel Enhancement TMOS FET Transistor, TO-39 Scan PDF
    IRFF330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF330 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    IRFF330 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    IRFF330 Unknown FET Data Book Scan PDF
    IRFF330 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IRFF330 Siliconix N-Channel Enhancement Mode Transistors TO-205AF Scan PDF
    IRFF330R Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF
    IRFF330R International Rectifier Rugged Series Power MOSFETs - N-Channel Scan PDF
    IRFF330R Unknown Shortform Datasheet & Cross References Data Short Form PDF

    IRFF330 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LD 33 regulator

    Abstract: JANTXV2N6800 IRFF330 JANTX2N6800
    Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International


    Original     		PDF 90432C IRFF330 JANTX2N6800 JANTXV2N6800 MIL-PRF-19500/557 O-205AF) LD 33 regulator JANTXV2N6800 IRFF330 JANTX2N6800

    Untitled

    Abstract: No abstract text available
    Text: IRFF330 Data Sheet Title FF3 bt 5A, 0V, 00 m, March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF330 TB334

    IRFF330

    Abstract: No abstract text available
    Text: IRFF330 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.


    Original     		PDF IRFF330 O205AF) 11-Oct-02 IRFF330

    Untitled

    Abstract: No abstract text available
    Text: , Dnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 IRFF330 Features 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF330

    Untitled

    Abstract: No abstract text available
    Text: IRFF330 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)3.0 I(DM) Max. (A) Pulsed I(D)2.0 @Temp (øC)100# IDM Max (@25øC Amb)14 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)25# Minimum Operating Temp (øC)-55


    Original     		PDF IRFF330

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet March 1999 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET • 3.5A, 400V Formerly developmental type TA17414. Ordering Information IRFF330 PACKAGE TO-205AF 1893.3 Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed,


    Original     		PDF IRFF330 TA17414. O-205AF IRFF330 TA17414 TB334

    Untitled

    Abstract: No abstract text available
    Text: PD - 90432C IRFF330 JANTX2N6800 JANTXV2N6800 REF:MIL-PRF-19500/557 400V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF330 BVDSS 400V RDS(on) 1.0Ω ID 3.0A  The HEXFET technology is the key to International


    Original     		PDF 90432C IRFF330 JANTX2N6800 JANTXV2N6800 MIL-PRF-19500/557 O-205AF)

    IRFF330

    Abstract: TA17414 TB334
    Text: IRFF330 Data Sheet January 2002 3.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET Features • 3.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    Original     		PDF IRFF330 TA17414. IRFF330 TA17414 TB334

    IRF460

    Abstract: SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065
    Text: Aerospace and Defense Products Short Form Catalog 2007 Welcome to the Aerospace and Defense Products Short Form Catalog. Inside is an overview of our product line including product specific information. To learn more, visit our web site at irf.com where you will find technical documents, data sheets for all products, application notes, design tips, technical papers, application-specific information,


    Original     		PDF 30am-5 44-0-1737-2com DB8029C IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RAD-HARD igbt IRF3504 afl2805s manufactured by international rectifier 550-065

    IRF3303

    Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333
    Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •


    OCR Scan     		PDF IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331

    2029 mosfet

    Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
    Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R

    MOSFET 4465

    Abstract: 4465 mosfet
    Text: HARRIS A ugust IRFF330/331/332/333 IRFF330R/331R /332R /333R N -Channel Power MOSFETs Avalanche Energy Rated* 1991 Package Features TO-2Q5AF • 3.0A and 3.5A, 350V - 400V • rDS on = 1 o n and 1-s n • Single Pulse Avalanche Energy Rated* GATE SOURCE • SOA is Power-Disslpatlon Limited


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330R/331R /332R /333R IRFF330, IRFF331, IRFF332, IRFF333 IRFF330R, IRFF331R, MOSFET 4465 4465 mosfet

    SMM70N05

    Abstract: irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800
    Text: - H f M tt % ± Vd s or € $ Vg s Vd g V 1R F F 310 IRFF311 IRFF312 IRFF313 1RFF320 IRFF321 IRFF322 IRFF323 IRFF330 IRFF331 IRFF332 IRFF333 IR FF420 IRFF421 IRFF422 IRFF423 IR F M 3 0 IRFF431 IRFF432 IR FF433 IR F F 9 1 10 1R F F 9 1 11 1R F F 9 112 IR FF9113


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 2520P10 SMM60N05 T0-204AE SMM70N05 irff31z MOD200A SMM11P20 SMM70N10 SMP2P20 251G FF323 IRFF310 SILICONIX 4800

    IRFF330

    Abstract: IRFF333 STL300
    Text: M O T O RO LA SC XSTRS/R F i 2 E D | b3b?2S4 00âb7üb M | IRFF330 IRFF333 CASE 79-05, STYLE 6 TO-39 TO-205AF M A X I M U M R A T IN G S Sym bol Rating IRFF330 IRFF333 Unft Drain-Source Voltage VDSS 400 350 Vdc Drain-Gate Voltage (Rq s = 1.0 mil) V d GR


    OCR Scan     		PDF IRFF330 IRFF333 IRFF333 O-205AF) STL300

    g371

    Abstract: IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371
    Text: HE D | MöSSMSa QGCHB'ìM 0 | INTERNATIONAL Data Sheet No. PD-9.357E _ T-39-Û9 RECTIFIER INTERNATIONAL RECTIFIER HEXFET TRANSISTORS IÖR IRFF330 IRFF331 N-CHAIUNEL POWER MOSFETs TO-39 PACKAGE IRFF33S IRFF333 400 Volt, 1.0 Ohm HEXFET Features: The HEXFET technology is the key to International


    OCR Scan     		PDF T-39-Ã G-376 g371 IRFF330 IRFF331 IRFF332 IRFF333 510 MOSFET EC07 CIRCUIT g371

    Untitled

    Abstract: No abstract text available
    Text: • i<302271 0 D 5 4 1 7 G flb2 ■ [g HARRIS HAS IRFF330/331/332/333 IRFF330R/331R/332R/333R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Package Features TO-2Q5AF • 3 .0 A and 3 .5 A , 3S0V - 400V • rD S o n = 1-Oft and 1 -5 0 • S in g le P u lse A valan ch e En erg y R ated*


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330R/331R/332R/333R FF330, FF331, RFF332, FF333 IRFF330R, IRFF331R, FF332R /RFF333R

    IRFF330

    Abstract: IRFF331
    Text: IFHf FIELD EFFECT POWER TRANSISTOR IRFF330.331 3.5 AMPERES 400, 350 VOLTS Rd S ON = 1.0 n Preliminary This series of N -C h annel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­


    OCR Scan     		PDF IRFF330 00A///sec, 250ma, RDS10NI IRFF331

    irff330

    Abstract: No abstract text available
    Text: y*Rg*s IRFF330, IRFF331, IRFF332, IRFF333 3.0A and 3.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 3.0A and 3.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


    OCR Scan     		PDF IRFF330, IRFF331, IRFF332, IRFF333 irff330

    TO-254

    Abstract: T0-204 IRF450 equivalent
    Text: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS


    OCR Scan     		PDF 2N6756 2N6758 2N6760 2N6762 2N6764 2N6766 2N6768 2N6770 2N6788 2N6790 TO-254 T0-204 IRF450 equivalent

    2N6788 motorola

    Abstract: vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111
    Text: FIELD-EFFECT TRANSISTORS continued Small-Signal TMOS TMOS Power MOSFETs Pow er M O SFETS, M o to ro la tra d e m a rk T M O S , a re FET transistors with an oxide insulated gate which controls vertical c u rren t flow. This basic description fits a n um ber of structures and process titles


    OCR Scan     		PDF IRFF431 IRFF432 IRFF433 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6788 motorola vmos vmos fet MFE910 n-channel vmos motorola MFE930 2N6659 2N6661 IRFF110 IRFF111

    IRF09120

    Abstract: 251G FF323 IRFF310 F9122 IRFF130 IRF0120
    Text: - f M % tt ± $ H V ds or € Vg s T a = 2 5 l3 Id Po a Vgs th ) I dss I gs s m tf ï & ï Ds(on) Vd s = ’l ï (V) * /CH * /CH (A) (W) (nA) Vgs (V) C m A) V ds (V) m in max (V) (V) I d (on) C is s g fs Coss C rss $1- B m % V g s =0 (max) Id (mA) ♦ typ


    OCR Scan     		PDF IRFF310 O-205AF FF312 FF322 FF323 25RFF230 IRFF231 IRF09120 251G FF323 IRFF310 F9122 IRFF130 IRF0120

    Untitled

    Abstract: No abstract text available
    Text: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical


    OCR Scan     		PDF

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


    OCR Scan     		PDF