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    INFINEON PACKAGE PART MARKING Search Results

    INFINEON PACKAGE PART MARKING Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH9R00CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 64 A, 0.009 Ω@10 V, High-speed diode, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1R306PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 100 A, 0.00134 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPHR8504PL Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 150 A, 0.00085 Ω@10 V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation

    INFINEON PACKAGE PART MARKING Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    741E-07

    Abstract: 1218E-02 NCV4276 NCV4276DS50 NCV4276DS50R4 NCV4276DT50 NCV4276DT50RK TLE4276 Cauer 712 dpak regulator
    Text: NCV4276 Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 400 mA at 5.0 V. Package options include DPAK and D2PAK. This device is pin−for−pin compatible with the Infineon part number TLE4276. http://onsemi.com


    Original     		NCV4276 TLE4276. 175AA NCV4276/D 741E-07 1218E-02 NCV4276 NCV4276DS50 NCV4276DS50R4 NCV4276DT50 NCV4276DT50RK TLE4276 Cauer 712 dpak regulator PDF

    INFINEON PART MARKING DPAK

    Abstract: NCV4276 dpak 5 pin 7808 smd D2Pak-5 Package 376E 411E TLE4276 2012E
    Text: NCV4276 Low−Drop Voltage Regulator This industry standard linear regulator has the capability to drive loads up to 400 mA at 5.0, 3.3, 2.5 and 1.8 V. Package options include DPAK and D2PAK. This device is pin−for−pin compatible with the Infineon part number TLE4276.


    Original     		NCV4276 TLE4276. 175AA NCV4276/D INFINEON PART MARKING DPAK NCV4276 dpak 5 pin 7808 smd D2Pak-5 Package 376E 411E TLE4276 2012E PDF

    617A-2

    Abstract: SFH6916 9221M1 213E
    Text: Optocoupler Part Markings Figure 1. Single and Dual SO8 Figure 4. DIP4 Products 25 mils 0.8±0.2 mm V D E 213E 9221M1 CL 20 mils (0.5±0.2 mm) WXXXY SFH 617A-2 XXXXX Manufacturers Identification INFINEON logo 20 mils dia. (in front of date code) (0.5±0.1 mm)


    Original     		9221M1 17A-2 1-888-Infineon 617A-2 SFH6916 9221M1 213E PDF

    Untitled

    Abstract: No abstract text available
    Text: Optocoupler Part Markings Infineon technologies Figure 1. Single and Dual SQ8 Figure 4. DIP4 Products 25 mils 0.8+0.2 mm &213E •9221M1 WXXXY c 20 mils (0.5±0.2 mm) SFH 6 1 7 A - 2 f<& X X X X X Manufacturers X INFINEON logo Identification 20 mils dia. (in front of date code)


    OCR Scan     		9221M1 1-888-lnfineon PDF

    9421-V1

    Abstract: 617A-2 SFH6916 121 122 opto opto SO8 9221M1 213E 424 opto OSRAM OPTO SEMICONDUCTORS GMBH 617A2
    Text: Optocoupler Part Markings Figure 1. Single and Dual SO8 Figure 4. DIP4 Products 25 mils 0.8±0.2 mm V D E 213E 9221M1 CL 20 mils (0.5±0.2 mm) WXXXY SFH 617A-2 XXXXX Manufacturers Identification INFINEON logo 20 mils dia. (in front of date code) (0.5±0.1 mm)


    Original     		9221M1 17A-2 1-888-Infineon 9421-V1 617A-2 SFH6916 121 122 opto opto SO8 9221M1 213E 424 opto OSRAM OPTO SEMICONDUCTORS GMBH 617A2 PDF

    213E

    Abstract: 617A-2 SFH6916 9221M1
    Text: Optocoupler Part Markings Figure 1. Single and Dual SO8 Figure 4. DIP4 Products 25 mils 0.8±0.2 mm V D E 213E 9221M1 CL 20 mils (0.5±0.2 mm) WXXXY SFH 617A-2 XXXXX Manufacturers Identification INFINEON logo 20 mils dia. (in front of date code) (0.5±0.1 mm)


    Original     		9221M1 17A-2 SFH6916 17-August-01 213E 617A-2 SFH6916 9221M1 PDF

    2N0640

    Abstract: BSPD25N06S2-40 SPD25N06S2-40 VGS-75
    Text: SPD25N06S2-40 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 40 m ID 25 A P-TO252-3-1 Type Package Ordering Code Marking SPD25N06S2-40


    Original     		SPD25N06S2-40 P-TO252-3-1 Q67060-S7427 2N0640 BSPD25N06S2-40, SPD25N06S2-40 2N0640 BSPD25N06S2-40 VGS-75 PDF

    2n06l35

    Abstract: transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 SPD26N06S2L-35
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 35 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD26N06S2L-35


    Original     		SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2n06l35 transistor 2N06L35 D26A 2N06L3 BSPD26N06S2L-35 INFINEON PART MARKING to252 PDF

    pn0307

    Abstract: BSPD50N03S2-07 SPD50N03S2-07
    Text: SPD50N03S2-07 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 V RDS on 7.3 m ID 50 A P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430


    Original     		SPD50N03S2-07 P-TO-252-3-11 P-TO-252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 BSPD50N03S2-07 PDF

    smd marking 58a

    Abstract: SPB80N10L SPP80N10L 80N10L SPI80N10
    Text: SPB80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 100 V RDS on 14 m ID 80 A P-TO263-3-2 Type Package Ordering Code Marking SPB80N10L


    Original     		SPB80N10L P-TO263-3-2 Q67042-S4171 80N10L BSPP80N10L, BSPB80N10L BSPI80N10L, SPP80N10L, smd marking 58a SPB80N10L SPP80N10L 80N10L SPI80N10 PDF

    Q67042-S4057

    Abstract: Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303
    Text: SPP100N03S2-03 SPB100N03S2-03 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 30 RDS on max. SMD version 3 ID Package Ordering Code Marking


    Original     		SPP100N03S2-03 SPB100N03S2-03 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67042-S4058 PN0303 P-TO263-3-2 Q67042-S4057 Q67042-S4058 INFINEON PART MARKING marking code br 39 SMD SPB100N03S2-03 SPP100N03S2-03 PN0303 PDF

    2n06l23

    Abstract: 2N06L marking code INFINEON TO252 INFINEON PART MARKING to252 ANPS071E Q67060-S7410 SPD30N06S2L-23 2N06
    Text: SPD30N06S2L-23 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2L-23


    Original     		SPD30N06S2L-23 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23 2N06L marking code INFINEON TO252 INFINEON PART MARKING to252 ANPS071E Q67060-S7410 2N06 PDF

    2N06LH5

    Abstract: DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS • Enhancement mode R DS on 55 ID • 175°C operating temperature • dv/dt rated Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054


    Original     		SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 DIODE H5 SMD Q67060-S6055 S6054 smd diode H5 ANPS071E SPB80N06S2L-H5 SPP80N06S2L-H5 2N06 PDF

    2n0308

    Abstract: C1904
    Text: SPU30N03S2-08 Preliminary data OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 8.2 m ID 30 A V P-TO251 Type Package Ordering Code Marking SPU30N03S2-08 P-TO251 Q67042-S4140


    Original     		SPU30N03S2-08 P-TO251 Q67042-S4140 2N0308 BSPU30N03S2-08, SPU30N03S2-08 2n0308 C1904 PDF

    smd marking 58a

    Abstract: 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A
    Text: SPI80N10L SPP80N10L SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS Package Ordering Code Marking SPP80N10L PG-TO220-3-1 Q67042-S4173 80N10L


    Original     		SPI80N10L SPP80N10L PG-TO262-3-1 PG-TO220-3-1 Q67042-S4173 80N10L smd marking 58a 80N10L INFINEON PART MARKING to220 pcb footprint SPI80N10L SPP80N10L 80N10 SMD marking code 58A PDF

    2N0623

    Abstract: INFINEON PART MARKING to252 S7420 BSPD30N06S2-23 P-TO252 SPD30N06S2-23 k 940 S5025 2N062
    Text: SPD30N06S2-23 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 23 m ID 30 A P-TO252 Type Package Ordering Code Marking SPD30N06S2-23


    Original     		SPD30N06S2-23 P-TO252 Q67060-S7420 2N0623 BSPD30N06S2-23, SPD30N06S2-23 2N0623 INFINEON PART MARKING to252 S7420 BSPD30N06S2-23 P-TO252 k 940 S5025 2N062 PDF

    2N06L13

    Abstract: Diode smd code 30a ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13 G1625
    Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 13 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2L-13


    Original     		SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 Diode smd code 30a ANPS071E BSPD30N06S2L-13 G1625 PDF

    PN0614

    Abstract: BSPD50N06S2-14 P-TO252 SPD50N06S2-14
    Text: SPD50N06S2-14 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 55 VDS RDS on ID V m 14.4 50 A P-TO252 Type Package Ordering Code Marking SPD50N06S2-14


    Original     		SPD50N06S2-14 P-TO252 Q67060-S7418 PN0614 BSPD50N06S2-14, SPD50N06S2-14 PN0614 BSPD50N06S2-14 P-TO252 PDF

    2n06l64

    Abstract: 47w marking SPD15N06S2L-64
    Text: SPD15N06S2L-64 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 64 m ID 19 A P- TO252 -3-11 Type Package Ordering Code Marking SPD15N06S2L-64


    Original     		SPD15N06S2L-64 Q67060-S7425 2N06L64 BSPD15N06S2L-64, SPD15N06S2L-64 2n06l64 47w marking PDF

    pn0307

    Abstract: BSPD50N03S2-07 SPD50N03S2-07
    Text: SPD50N03S2-07 Preliminary data OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  dv/dt rated VDS 30 RDS on 7.3 m ID 50 A V P-TO-252-3-11 Type Package Ordering Code Marking SPD50N03S2-07 P-TO-252-3-11


    Original     		SPD50N03S2-07 P-TO-252-3-11 Q67040-S4430 PN0307 BSPD50N03S2-07, SPD50N03S2-07 pn0307 BSPD50N03S2-07 PDF

    47N10

    Abstract: SPB47N10 SPI47N10 SPP47N10 V550-12 Q67060-S7431
    Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated VDS P-TO262-3-1 Package Ordering Code Marking SPP47N10 P-TO220-3-1


    Original     		SPI47N10 SPP47N10 SPB47N10 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP47N10 Q67040-S4183 47N10 47N10 SPB47N10 SPI47N10 V550-12 Q67060-S7431 PDF

    INFINEON PART MARKING

    Abstract: INFINEON marking TLE4928C TLE4925
    Text: Data Sheet Supplement Version 3.0 valid for 8” product Dynamic Differential Hall Effect Sensor TLE4928C For all parameters not specified in this document the TLE4925/25C data sheet is valid. PG-SSO-3-9 Type Marking Ordering Code Package TLE4928C 28C SP000269349


    Original     		TLE4928C TLE4925/25C SP000269349 TLE4928C INFINEON PART MARKING INFINEON marking TLE4925 PDF

    schematic diagram of bluetooth device

    Abstract: INFINEON PART MARKING CGB240 infineon marking code L2 Q62702-G0174 mmic marking L capacitor 22 pf Inductor 22 nH infineon marking L1
    Text: GaAs MMIC CGB240 Preliminary Data Sheet • 2-stage Bluetooth InGaP HBT power amplifier • Single voltage supply 1 • Wide operating voltage range 2.0 - 5.5 V • POUT = 23 dBm at VC = 3.2 V • Overall power added efficiency PAE up to 50% • Analog power control with four power steps


    Original     		CGB240 TSSOP-10-2 Q62702-G0174 CGB240 schematic diagram of bluetooth device INFINEON PART MARKING infineon marking code L2 Q62702-G0174 mmic marking L capacitor 22 pf Inductor 22 nH infineon marking L1 PDF

    INFINEON PART MARKING

    Abstract: A4S 29
    Text: BAV70. Silicon Switching Diode • For high-speed switching applications • Common cathode configuration • BAV70S / U: For orientation in reel see package information below • Pb-free RoHS compliant package1) • Qualified according AEC Q101 BAV70


    Original     		BAV70. BAV70S BAV70 BAV70W BAV70U BAV70U INFINEON PART MARKING A4S 29 PDF