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    2N06L Price and Stock

    Infineon Technologies AG BSC112N06LDATMA1

    MOSFET 2N-CH 60V 20A 8TDSON
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    Infineon Technologies AG IQE022N06LM5SCATMA1

    OPTIMOS 5 POWER-TRANSISTOR 60V
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    Nexperia PHB32N06LT,118

    MOSFET N-CH 60V 34A D2PAK
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    Infineon Technologies AG IQE022N06LM5ATMA1

    TRENCH 40<-<100V
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    Infineon Technologies AG IQE022N06LM5CGSCATMA1

    OPTIMOS 5 POWER-TRANSISTOR 60V
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    Find more 2N06L price and stock on Findchips.com

    2N06L Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N06L Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N06L Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N06L35

    Abstract: 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD26N06S2L-35 PG-TO252-3-11 2N06L35 726-IPD26N06S2L-35 2N06L35 2N06L v5856 GS6010 PCB REV 3.5 IPD26N06S2L-35 2N06L3

    2N06L06

    Abstract: DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOSâ Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 6.3 mΩ ID 80 A P- TO263 -3-2 • 175°C operating temperature P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		PDF SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 Q67060-S6034 2N06L06 BSPP80N06S2L-06 BSPB80N06S2L-06, 2N06L06 DIODE led SMD 5050 smd led 5050 datasheet SPB80N06S2L-06 SPP80N06S2L-06 ANPS071E smd diode marking 69a

    2N06L11

    Abstract: ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 11 mΩ ID 80 A • Logic Level • Avalanche rated P- TO263 -3-2 P- TO220 -3-1 • dv/dt rated Type Package Ordering Code


    Original     		PDF SPP80N06S2L-11 SPB80N06S2L-11 Q67060-S6035 2N06L11 Q67060-S6036 BSPP80N06S2L-11 BSPB80N06S2L-11, 2N06L11 ANPS071E SPB80N06S2L-11 SPP80N06S2L-11 Q67060-S6035 2N06L

    2N06L05

    Abstract: INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS
    Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on max. SMD version 4.5 mΩ • Logic Level ID 80 A •=175°C operating temperature P-TO263-3-2 • Enhancement mode P-TO220-3-1


    Original     		PDF SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4246 2N06L05 P-TO263-3-2 2N06L05 INFINEON PART MARKING SPB80N06S2L-05 SPP80N06S2L-05 402VGS

    2n06l07

    Abstract: SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07
    Text: SPP80N06S2L-07 SPB80N06S2L-07 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 7 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated


    Original     		PDF SPP80N06S2L-07 SPB80N06S2L-07 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4285 2N06L07 P-TO263-3-2 2n06l07 SPB80N06S2L-07 SPP80N06S2L-07 BSPB80N06S2L-07

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO220-3-1 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 Q67060-S6055 2N06LH5

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 23 mΩ ID 30 A • Enhancement mode • Logic Level • 175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type Package


    Original     		PDF SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 BSPD30N06S2L-23, SPD30N06S2L-23 2n06l23

    2n06l23

    Abstract: No abstract text available
    Text: SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 23 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N06S2L-23 Package Ordering Code


    Original     		PDF SPD30N06S2L-23 SPD30N06S2L-23 Q67060-S7410 2N06L23 BSPD30N06S2L-23, 2n06l23

    2N06LH5

    Abstract: No abstract text available
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 Preliminary data OptiMOSâ Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 5 mΩ ID 80 A • Enhancement mode • 175°C operating temperature • Avalanche rated P-TO263-3-2 P-TO220-3-1 • dv/dt rated


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 P-TO263-3-2 P-TO220-3-1 Q67060-S6054 2N06LH5 2N06LH5

    2N06L11

    Abstract: TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104
    Text: IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 OptiMOS Power-Transistor Product Summary Features V DS 55 V • N-channel Logic Level - Enhancement mode R DS on ,max (SMD version) 10.7 mW • Automotive AEC Q101 qualified ID 80 A • MSL1 up to 260°C peak reflow


    Original     		PDF IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 SP0002-18177 2N06L11 2N06L11 TRANSISTOR SMD MARKING CODE 26 IPB80N06S2L-11 IPI80N06S2L-11 IPP80N06S2L-11 PG-TO263-3-2 smd diode 104

    2n06l23

    Abstract: ANPS071E IPD30N06S2L-23 PG-TO252-3-11 SMD MARKING g5
    Text: IPD30N06S2L-23 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 23 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S2L-23 PG-TO252-3-11 2N06L23 2n06l23 ANPS071E IPD30N06S2L-23 PG-TO252-3-11 SMD MARKING g5

    Untitled

    Abstract: No abstract text available
    Text: IPG20N06S2L-65A OptiMOS Power-Transistor Product Summary VDS 55 V RDS on ,max3) 65 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-10 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-65A PG-TDSON-8-10 2N06L65

    2N06LH5

    Abstract: S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5
    Text: SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS =Power-Transistor Product Summary Feature 55 VDS  N-Channel R DS on  Enhancement mode ID 175°C operating temperature Type SPP80N06S2L-H5 Package Ordering Code P- TO220 -3-1 Q67060-S6054 Marking SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055


    Original     		PDF SPP80N06S2L-H5 SPB80N06S2L-H5 Q67060-S6054 Q67060-S6055 2N06LH5 BSPP80N06S2L-H5 BSPB80N06S2L-H5, 2N06LH5 S6054 DIODE H5 SMD Q67060-S6055 smd diode H5 SPB80N06S2L-H5 ANPS071E SPP80N06S2L-H5

    2N06L05

    Abstract: 2N06L SPB80N06S2L-05 SPP80N06S2L-05 SMD MARKING CODE M 4 Diode
    Text: SPP80N06S2L-05 SPB80N06S2L-05 Preliminary data OptiMOS =Power-Transistor Product Summary Feature VDS • N-Channel RDS on • Enhancement mode max. SMD version ID • Logic Level P-TO263-3-2 •=175°C operating temperature 55 V 4.5 mΩ 80 A P-TO220-3-1


    Original     		PDF SPP80N06S2L-05 SPB80N06S2L-05 P-TO263-3-2 P-TO220-3-1 SPP80N06S2L-05 P-TO220-3-1 Q67040-S4246 2N06L05 SPB80N06S2L-05 P-TO263-3-2 2N06L05 2N06L SMD MARKING CODE M 4 Diode

    2N06L23

    Abstract: P-TO252 Q67060-S7410 SPD30N06S2L-23 2N06
    Text: Preliminary data SPD30N06S2L-23 OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V RDS on 23 mΩ ID 30 A P-TO252 •=175°C operating temperature • Avalanche rated • dv/dt rated Type Package


    Original     		PDF SPD30N06S2L-23 P-TO252 Q67060-S7410 2N06L23 2N06L23 P-TO252 Q67060-S7410 SPD30N06S2L-23 2N06

    DIODE smd marking 52A

    Abstract: SPB80N06S2L-09 SPP80N06S2L-09 2N06L09
    Text: SPP80N06S2L-09 SPB80N06S2L-09 Preliminary data OptiMOS =Power-Transistor Feature Product Summary • N-Channel VDS 55 V RDS on 8.5 mΩ ID 80 A • Enhancement mode • Logic Level •=175°C operating temperature P-TO263-3-2 P-TO220-3-1 • Avalanche rated


    Original     		PDF SPP80N06S2L-09 SPB80N06S2L-09 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6031 2N06L09 P-TO263-3-2 DIODE smd marking 52A SPB80N06S2L-09 SPP80N06S2L-09 2N06L09

    2n06l09

    Abstract: SPB80N06S2L-11 SPP80N06S2L-11 2N06L
    Text: SPP80N06S2L-11 SPB80N06S2L-11 Preliminary data OptiMOS=Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 RDS on 11 m ID 80 A P-TO263-3-2 Type Package


    Original     		PDF SPP80N06S2L-11 SPB80N06S2L-11 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67060-S6035 2N06L09 P-TO263-3-2 2n06l09 SPB80N06S2L-11 SPP80N06S2L-11 2N06L

    smd marking code G16

    Abstract: 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008
    Text: IPB80N06S2L-06 IPP80N06S2L-06 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 6.3 mΩ ID 80 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 PG-TO220-3-1 SP0002-18163 2N06L06 smd marking code G16 2n06l06 ANPS071E IPB80N06S2L-06 IPP80N06S2L-06 PG-TO263-3-2 SP000218163 A6008

    2N06L35

    Abstract: 68w smd transistor 2N06L35 BSPD26N06S2L-35 SPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode
    Text: SPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 35 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD26N06S2L-35


    Original     		PDF SPD26N06S2L-35 Q67060-S7426 2N06L35 BSPD26N06S2L-35, SPD26N06S2L-35 2N06L35 68w smd transistor 2N06L35 BSPD26N06S2L-35 smd 68w INFINEON PART MARKING to252 68w diode

    smd diode marking 69a

    Abstract: DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120
    Text: SPP80N06S2L-06 SPB80N06S2L-06 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 6.3 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		PDF SPP80N06S2L-06 SPB80N06S2L-06 Q67060-S6033 2N06L06 Q67060-S6034 BSPP80N06S2L-06 BSPB80N06S2L-06, smd diode marking 69a DIODE led SMD 5050 2N06L06 ANPS071E SPB80N06S2L-06 SPP80N06S2L-06 32F120

    2n06l05

    Abstract: 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05 SPP80N06S2L-05
    Text: SPI80N06S2L-05 SPP80N06S2L-05,SPB80N06S2L-05 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode RDS on max. SMD version 4.5 mΩ ID 80 A • Logic Level • Avalanche rated P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1


    Original     		PDF SPI80N06S2L-05 SPP80N06S2L-05 SPB80N06S2L-05 SPP80N06S2L-05 Q67040-S4246 Q67040-S4256 2N06L05 Q67060-S7422 2n06l05 2N06L SPI80N06S2L-05 ANPS071E SPB80N06S2L-05

    2N06L09

    Abstract: D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09
    Text: SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 8.5 mΩ ID 80 A • Logic Level • 175°C operating temperature P- TO263 -3-2 P- TO220 -3-1 • Avalanche rated • dv/dt rated


    Original     		PDF SPP80N06S2L-09 SPB80N06S2L-09 Q67060-S6031 2N06L09 Q67060-S6032 BSPP80N06S2L-09 BSPB80N06S2L-09, 2N06L09 D52A smd TRANSISTOR code marking 8K ANPS071E SPB80N06S2L-09 SPP80N06S2L-09

    2N06L50

    Abstract: diode c25 IPG20N06S2L-50 PG-TDSON-8-4
    Text: IPG20N06S2L-50 OptiMOS Power-Transistor Product Summary V DS 55 V R DS on ,max4) 50 mΩ ID 20 A Features • Dual N-channel Logic Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPG20N06S2L-50 2N06L50 2N06L50 diode c25 IPG20N06S2L-50 PG-TDSON-8-4

    2n06l35

    Abstract: transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a
    Text: IPD26N06S2L-35 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 35 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD26N06S2L-35 PG-TO252-3-11 2N06L35 2n06l35 transistor 2N06L35 IPD26N06S2L-35 PG-TO252-3-11 10026a