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    2N06L13 Search Results

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    2N06L13 Price and Stock

    Infineon Technologies AG IPD30N06S2L-13

    30 A, 55 V, 0.017 OHM, N-CHANNEL, SI, POWER, MOSFET, TO-252 (Also Known As: 2N06L13)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components IPD30N06S2L-13 2,562
    • 1 $1.875
    • 10 $1.875
    • 100 $1.875
    • 1000 $0.8625
    • 10000 $0.7875
    		Buy Now

    2N06L13 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N06L13

    Abstract: Diode smd code 30a ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13 G1625
    Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated VDS 55 V RDS on 13 m ID 30 A P- TO252 -3-11 Type Package Ordering Code Marking SPD30N06S2L-13


    Original     		PDF SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 Diode smd code 30a ANPS071E BSPD30N06S2L-13 G1625

    2N06L13

    Abstract: ANPS071E BSPD30N06S2L-13 SPD30N06S2L-13
    Text: SPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Feature • N-Channel VDS 55 V • Enhancement mode R DS on 13 mΩ ID 30 A • Logic Level • 175°C operating temperature P- TO252 -3-11 • Avalanche rated • dv/dt rated Type SPD30N06S2L-13


    Original     		PDF SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 ANPS071E BSPD30N06S2L-13

    2N06L13

    Abstract: SM 71A diode BSPD30N06S2L-13
    Text: SPD30N06S2L-13 OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level VDS 55 V R DS on 13 m ID 30 A P- TO252 -3-11 175°C operating temperature  Avalanche rated  dv/dt rated Type SPD30N06S2L-13 Package Ordering Code


    Original     		PDF SPD30N06S2L-13 SPD30N06S2L-13 Q67040-S4254 2N06L13 BSPD30N06S2L-13, 2N06L13 SM 71A diode BSPD30N06S2L-13

    2N06L13

    Abstract: P-TO252 SPD30N06S2L-13
    Text: Preliminary data SPD30N06S2L-13 OptiMOS =Power-Transistor Features Product Summary • N-Channel Drain source voltage VDS 55 V • Drain-source on-state resistance RDS on 13 mΩ Continuous drain current ID 30 A Enhancement mode • Avalanche rated


    Original     		PDF SPD30N06S2L-13 SPD30N06S2L-13 P-TO252 Q67040-S4254 2N06L13 2N06L13 P-TO252

    2N06L13

    Abstract: INFINEON PART MARKING to252 BSPD30N06S2L-13 P-TO252 SPD30N06S2L-13
    Text: SPD30N06S2L-13 Preliminary data OptiMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode • Logic Level VDS 55 V R DS on 13 mΩ ID 30 A •=175°C operating temperature P-TO252 • Avalanche rated • dv/dt rated Type SPD30N06S2L-13


    Original     		PDF SPD30N06S2L-13 P-TO252 Q67040-S4254 2N06L13 BSPD30N06S2L-13, SPD30N06S2L-13 2N06L13 INFINEON PART MARKING to252 BSPD30N06S2L-13 P-TO252

    2N06L13

    Abstract: IPD30N06S2L-13 ANPS071E PG-TO252-3-11 IPD30N06S2L13
    Text: IPD30N06S2L-13 OptiMOS Power-Transistor Product Summary Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified V DS 55 V R DS on ,max (SMD version) 13 mΩ ID 30 A • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original     		PDF IPD30N06S2L-13 PG-TO252-3-11 2N06L13 2N06L13 IPD30N06S2L-13 ANPS071E PG-TO252-3-11 IPD30N06S2L13