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Infineon Technologies AG IMD700AQ064X128AAXUMA1 CONTROLLER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IMD700AQ064X128AAXUMA1	Cut Tape	1,892		1	1 $6.79 10 $5.231 100 $4.4112 1000 $3.98163 10000 $3.98163	Buy Now
	IMD700AQ064X128AAXUMA1	Digi-Reel	1,892		1	1 $6.79 10 $5.231 100 $4.4112 1000 $3.98163 10000 $3.98163	Buy Now
	IMD700AQ064X128AAXUMA1	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $3.89806	Buy Now
Avnet Americas	IMD700AQ064X128AAXUMA1	Reel	2,000	12 Weeks	1	1 $2.5298 10 $2.5298 100 $2.5298 1000 $2.5298 10000 $2.5298	Buy Now
Mouser Electronics	IMD700AQ064X128AAXUMA1		47			1 $6.55 10 $4.92 100 $4.08 1000 $3.61 10000 $3.5	Buy Now
Verical	IMD700AQ064X128AAXUMA1		2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.356	Buy Now
	IMD700AQ064X128AAXUMA1		2,000		2	1 - 10 $3.627 100 $3.532 1000 $3.39 10000 $3.39	Buy Now
Arrow Electronics	IMD700AQ064X128AAXUMA1	Cut Strips	2,000	12 Weeks	1	1 $3.674 10 $3.627 100 $3.532 1000 $3.39 10000 $3.39	Buy Now
	IMD700AQ064X128AAXUMA1		2,000	12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $3.356	Buy Now

Newark	IMD700AQ064X128AAXUMA1	Cut Tape	1,930		1	1 $6.18 10 $5.55 100 $4.73 1000 $3.27 10000 $3.19	Buy Now
Rochester Electronics	IMD700AQ064X128AAXUMA1				1	1 $2.7 10 $2.7 100 $2.54 1000 $2.3 10000 $2.3	Buy Now
EBV Elektronik	IMD700AQ064X128AAXUMA1		4,000	13 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	IMD700AQ064X128AAXUMA1		2,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
New Advantage Corporation	IMD700AQ064X128AAXUMA1		4,000		1	1 - 10 - 100 - 1000 - 10000 $5.27	Buy Now
Infineon Technologies AG IMD701AQ064X128AAXUMA1 CONTROLLER
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IMD701AQ064X128AAXUMA1	Digi-Reel	356		1	1 $6.79 10 $5.231 100 $4.4112 1000 $3.98163 10000 $3.98163	Buy Now
	IMD701AQ064X128AAXUMA1	Cut Tape	356		1	1 $6.79 10 $5.231 100 $4.4112 1000 $3.98163 10000 $3.98163	Buy Now
	IMD701AQ064X128AAXUMA1	Reel			2,000	1 - 10 - 100 - 1000 - 10000 $3.89806	Buy Now
Avnet Americas	IMD701AQ064X128AAXUMA1	Reel		12 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $3.99889	Buy Now
Mouser Electronics	IMD701AQ064X128AAXUMA1		1,900			1 $6.79 10 $5.24 100 $4.42 1000 $4.21 10000 $3.8	Buy Now
Verical	IMD701AQ064X128AAXUMA1		2,000		119	1 - 10 - 100 - 1000 $2.875 10000 $2.875	Buy Now
	IMD701AQ064X128AAXUMA1		1,987		2	1 - 10 $2.792 100 $2.792 1000 $2.792 10000 $2.792	Buy Now
	IMD701AQ064X128AAXUMA1		150		119	1 - 10 - 100 - 1000 $2.875 10000 $2.875	Buy Now
Arrow Electronics	IMD701AQ064X128AAXUMA1	Cut Strips	1,987	12 Weeks	1	1 $3.077 10 $3.03 100 $2.935 1000 $2.792 10000 $2.792	Buy Now

Newark	IMD701AQ064X128AAXUMA1	Cut Tape	1,917		1	1 $6.18 10 $5.55 100 $4.73 1000 $3.27 10000 $3.19	Buy Now
Rochester Electronics	IMD701AQ064X128AAXUMA1		2,150		1	1 $2.7 10 $2.7 100 $2.54 1000 $2.3 10000 $2.3	Buy Now
EBV Elektronik	IMD701AQ064X128AAXUMA1		4,000	13 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IMD701AQ064X128AAXUMA1		4,000		1	1 - 10 - 100 - 1000 - 10000 $5.27	Buy Now
Infineon Technologies AG EVALIMD700AFOC3SHTOBO1 EVAL BOARD FOR 6EDL7141
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EVALIMD700AFOC3SHTOBO1	Bulk	4		1	1 $214.69 10 $214.192 100 $214.192 1000 $214.192 10000 $214.192	Buy Now
Avnet Americas	EVALIMD700AFOC3SHTOBO1	Box			1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	EVALIMD700AFOC3SHTOBO1		11			1 $214.68 10 $214.68 100 $214.68 1000 $214.68 10000 $214.68	Buy Now
Newark	EVALIMD700AFOC3SHTOBO1	Bulk	2		1	1 $222.63 10 $222.63 100 $222.63 1000 $222.63 10000 $222.63	Buy Now
Chip One Stop	EVALIMD700AFOC3SHTOBO1	Bulk	1			1 $188 10 $188 100 $188 1000 $188 10000 $188	Buy Now
TCI MINI MD 700 Power supply: switching; LED; 16÷28VDC; 700mA; 220÷240VAC; IP20
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	MINI MD 700		30		1	1 $13.64 10 $13.23 100 $11.58 1000 $11.58 10000 $11.58	Buy Now
Others OXE7.E15T-L82C.SIMD.7AI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip-Germany GmbH	OXE7.E15T-L82C.SIMD.7AI		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IMD7 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
IMD3 Abstract: 100DEG M67766B Text: M67766B IMD3,5,7 vs. Po IMD3 +25deg.C IMD5(+25deg.C) IMD7(+25deg.C) IMD3(-30deg.C) IMD5(-30deg.C) IMD7(-30deg.C) IMD3(+100deg.C) IMD5(+100deg.C) IMD7(+100deg.C) -5 -10 -15 IMD (dBc) -20 -25 -30 -35 -40	Original	M67766B 824MHz 50ohms 25deg -30deg IMD3 100DEG	PDF
BLF6G22-180PN Abstract: No abstract text available Text: BLF6G22-180PN Power LDMOS transistor Rev. 02 — 23 April 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22-180PN BLF6G22-180PN	PDF
AN1032 Abstract: NES2427P-140 transistor a 1837 Text: PRELIMINARY DATA SHEET 140 W S-BAND TWIN POWER GaAs MESFET NES2427P-140 OUTLINE DIMENSIONS Units in mm FEATURES • • • • HIGH OUTPUT POWER: 140 W TYP HIGH LINEAR GAIN: 9.5 dB TYP HIGH EFFICIENCY: 41% TYP USABLE IN BALANCED OR PUSH-PULL CONFIGURATION.	Original	NES2427P-140 NES2427P-140 24-Hour AN1032 transistor a 1837	PDF
BLF3G22-30 Abstract: C3225X7R1H155M TEKELEC Text: BLF3G22-30 UHF power LDMOS transistor Rev. 01 — 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance	Original	BLF3G22-30 BLF3G22-30 C3225X7R1H155M TEKELEC	PDF
BLF6G22-45 Abstract: BLF6G22S-45 ROGERS DUROID Text: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.	Original	BLF6G22S-45 BLF6G22S-45 BLF6G22-45 ROGERS DUROID	PDF
BLF6G20-110 Abstract: BLF6G20LS-110 RF35 Text: BLF6G20-110; BLF6G20LS-110 Power LDMOS transistor Rev. 03 — 13 January 2009 Product data sheet 1. Product profile 1.1 General description 110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35	PDF
200B Abstract: 20AWG 700B M252 SD57120 Text: SD57120 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION, PUSH-PULL • POUT = 120 W WITH 13 dB gain @ 960 MHz • BeO FREE PACKAGE M252 epoxy sealed • INTERNAL INPUT MATCHING	Original	SD57120 SD57120 TSD57120 200B 20AWG 700B M252	PDF
BLF7G20L-90P Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70 Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70	PDF
BLF7G20LS-140P Abstract: 850 SMD Rework Station RF35 Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance	Original	BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35	PDF
Untitled Abstract: No abstract text available Text: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance	Original	BLF10M6135; BLF10M6LS135 BLF10M6135	PDF
ph98 Abstract: 597 smd transistor smd code HF transistor 2222-581 ACPR300 ACPR600 ACPR900 BLF3G21-30 PH98072 ph-98 Text: BLF3G21-30 UHF power LDMOS transistor Rev. 01 — 14 February 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz. Table 1. Typical class-AB RF performance	Original	BLF3G21-30 ACPR600 1920ions BLF3G21-30 ph98 597 smd transistor smd code HF transistor 2222-581 ACPR300 ACPR600 ACPR900 PH98072 ph-98	PDF
Untitled Abstract: No abstract text available Text: RF3931D 30W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF OUT VD RF IN VG •Output Power 50W at P3dB	Original	RF3931D 96mmx1 33mmx0 DS110520	PDF
transistor 1800MHz Abstract: r.f. amplifier 30mhz Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RF3826 30MHz 2500MHz, 2500MHz 2500MHz) transistor 1800MHz r.f. amplifier 30mhz	PDF
EI -40C Abstract: No abstract text available Text: RF3933 90W GaN WIDE-BAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Small Signal Gain = 21dB at 0.9GHz 48V Operation Typical	Original	RF3933 DS120306 EI -40C	PDF

Untitled Abstract: No abstract text available Text: RF3934D RF3934D 120W GaN on SiC Power Amplifier Die 120W GaN ON SIC POWER AMPLIFIER DIE Package: Die RF OUT VD Features  Broadband Operation DC-4GHz  Advanced GaN HEMT Technology  Packaged Small Signal Gain=13dB at 2GHz  48V Typical Packaged Performance	Original	RF3934D 96mmx4 57mmx0 DS110520	PDF
Untitled Abstract: No abstract text available Text: RFG1M09090 700MHZ to 1000MHZ 90W GaN RFG1M09090 Proposed 700MHZ TO 1000MHZ 90W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advanced GaN HEMT Technology Typical Peak Modulated Power >120W Advanced Heat-Sink Technology	Original	RFG1M09090 700MHZ 1000MHZ RFG1M09090 RF400-2 865MHz 960MHz 44dBm	PDF
rf3826 Abstract: ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz Text: RF3826 RF3826 30MHz to 2500MHz, 9W GaN Wideband Power Amplifier 30MHz TO 2500MHz, 9W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 9W  Advanced Heat-Sink Technology	Original	RF3826 30MHz 2500MHz, RF3826 2500MHz 2500MHz) ERJ-3GEYJ821 ERJ-3GEYJ391 transistor 1800MHz	PDF
RFHA1000 Abstract: No abstract text available Text: RFHA1000 RFHA1000 50MHz to 1000MHz, 15W GaN Wideband Power Amplifier 50MHz TO 1000MHz, 15W GaN WIDEBAND POWER AMPLIFIER Package: AlN Leadless Chip Carrier / SO8 VGS Pin 1 Features  Advanced GaN HEMT Technology  Output Power of 15W  Advanced Heat-Sink Technology	Original	RFHA1000 50MHz 1000MHz, RFHA1000 1000MHz DS121114	PDF
RFG1M20180 Abstract: ATC800B820JT Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	RFG1M20180 RFG1M20180 RF400-2 -36dBc -55dBc DS120418 ATC800B820JT	PDF
Untitled Abstract: No abstract text available Text: RFHA1042 RFHA1042 225MHz to 450MHz 125W GaN Power Amplifier 225MHz TO 450MHz 125W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-Pin, RF400-2 Features  Advanced GaN HEMT Technology  Peak Power 125W Wideband  Single Circuit for 225 - 450MHz  48V Modulated Typical	Original	RFHA1042 225MHz 450MHz RFHA1042 RF400-2 -26dBc	PDF
Micron 512MB NOR FLASH Abstract: scr FIR 3d tce-9 transistor marking code wm9 MARKING CODE WM9 682 sip resistor marking code WM4 SKE 1/16 data sheet scr fir 3d SAA 7000 Text: RM0040 Reference manual STn8815A12 register descriptions Introduction This document describes the registers of the STn8815A12. For a more detailed description of each module, its features and functions, refer to the STn8815A12 datasheet. The registers of the STn8815A12 are based on 32 bits. The descriptions provide the	Original	RM0040 STn8815A12 STn8815A12. Micron 512MB NOR FLASH scr FIR 3d tce-9 transistor marking code wm9 MARKING CODE WM9 682 sip resistor marking code WM4 SKE 1/16 data sheet scr fir 3d SAA 7000	PDF
RFG1M20180SB Abstract: j35 fet RFG1M20180SQ Text: RFG1M20180 RFG1M20180 1.8GHZ to 2.2GHZ 180W GaN 1.8GHZ TO 2.2GHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features      Advance GaN HEMT Technology Typical Peak Modulated Power > 180W Advanced Heat-Sink Technology Single Circuit for 1.8GHz to	Original	RFG1M20180 RFG1M20180 RF400-2 -38dBc -55dBc DS120803 RFG1M20180SB j35 fet RFG1M20180SQ	PDF
Untitled Abstract: No abstract text available Text: RF3931 30W GaN WIDEBAND POWER AMPLIFIER Package Style: Hermetic 2-Pin Flanged Ceramic Features      Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Gain = 15dB at 2GHz 48V Operation Typical Performance at 900MHz	Original	RF3931 900MHz EAR99 RF3931 DS120306	PDF
A1933 Abstract: No abstract text available Text: RF3932D 60W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     RF OUT VD Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=14dB at 2GHz 48V Typical Packaged Performance RF IN VG • Output Power 75W at P3dB	Original	RF3932D 96mmx1 92mmx0 RF3932D DS110224 A1933	PDF

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IMD7 Price and Stock

Infineon Technologies AG IMD700AQ064X128AAXUMA1

Infineon Technologies AG IMD701AQ064X128AAXUMA1

Infineon Technologies AG EVALIMD700AFOC3SHTOBO1

TCI MINI MD 700

Others OXE7.E15T-L82C.SIMD.7AI

IMD7 Datasheets Context Search

IMD3

BLF6G22-180PN

AN1032

BLF3G22-30

BLF6G22-45

BLF6G20-110

200B

BLF7G20L-90P

BLF7G20LS-140P

Untitled

ph98

Untitled

transistor 1800MHz

EI -40C

Untitled

Untitled

rf3826

RFHA1000

RFG1M20180

Untitled

Micron 512MB NOR FLASH

RFG1M20180SB

Untitled

A1933