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    BLF6G22-45 Search Results

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    BLF6G22-45 Price and Stock

    Rochester Electronics LLC BLF6G22-45,135

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,135 Bulk 6
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    Ampleon BLF6G22-45,135

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,135 Reel
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    Rochester Electronics BLF6G22-45,135 142 1
    • 1 $52.81
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    • 100 $49.64
    • 1000 $44.89
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    Ampleon BLF6G22-45,112

    RF MOSFET LDMOS 28V CDFM2
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    DigiKey BLF6G22-45,112 Tray
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    NXP Semiconductors BLF6G22-45,112

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    Bristol Electronics BLF6G22-45,112 151
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    Quest Components BLF6G22-45,112 48
    • 1 $67.54
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    • 100 $54.032
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    NXP Semiconductors BLF6G2245

    POWER LDMOS TRANSISTOR RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
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    ComSIT USA BLF6G2245 12
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    BLF6G22-45 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF6G22-45 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB Original PDF
    BLF6G22-45 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,112 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,135 Ampleon USA Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT608A Original PDF
    BLF6G22-45,112 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Blister pack Original PDF
    BLF6G22-45,112 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF
    BLF6G22-45,135 NXP Semiconductors Power LDMOS transistor - Description: Basestation RF POWER Transistor ; Efficiency: 13 %; Frequency band: 2000 - 2200 GHz; Mode: W-CDMA / UMTS ; Output power: 2.5 W; Package material: SOT608A ; Power gain: 18.5 dB; Package: SOT608A (CDFM2); Container: Tape reel smd Original PDF
    BLF6G22-45,135 NXP Semiconductors BLF6G22 - TRANSISTOR S BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, CERAMIC PACKAGE-3, FET RF Power Original PDF