EM48BM1684LBA
Abstract: cke02 EM48BM1684LBA-75F 54bA
Text: eorex EM48BM1684LBA Revision History Revision 0.1 May. 2007 - First release. Revision 0.2 (May. 2008). - change package out-line spec : from 12.5mm x 10.0mm to 12.0mm x 10.0mm Revision 0.3 (Aug. 2008). - change ICC spec : ICC2N : 12 MA ICC2Ns. : 5 MA ICC3P :
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EM48BM1684LBA
512Mb
133MHz
166MHz
EM48BM1684LBA
cke02
EM48BM1684LBA-75F
54bA
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Untitled
Abstract: No abstract text available
Text: IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Obselete partial refresh function Obselete 5ns speed grade Change ICC3P from 3mA to 5mA September 26,2002 September 05,2003
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IC42S32200
IC42S32200L
64-MBIT)
DR036-0B
166MHz
143MHz
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IC42S32200
Abstract: IC42S32200L DR036-0D
Text: IC42S32200 IC42S32200L Document Title 512K x 32 Bit x 4 Banks 64-MBIT SDRAM Revision History Revision No History Draft Date 0A 0B Initial Draft Obselete partial refresh function Obselete 5ns speed grade Change ICC3P from 3mA to 5mA Revise typo Revise p.20,p.22 data and p.28 typo
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IC42S32200
IC42S32200L
64-MBIT)
DR036-0D
512mperature
166MHz
143MHz
IC42S32200
IC42S32200L
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EM484M1644VTA
Abstract: No abstract text available
Text: eorex EM484M1644VTA Revision History Revision 0.1 Jun. 2009 -First release Revision 0.2 (July 2013) -Update DC/AC parameter -DC parameters update points. 1. ICC2P 1.5ma to 10ma. 2. ICC2PS 1ma to 5ma. 3. ICC2N 20ma to 30ma. 4. ICC2NS 10ma to 25ma. 5. ICC3P 7ma to 30ma.
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EM484M1644VTA
110ma
115ma.
EM484M1644VTA
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Untitled
Abstract: No abstract text available
Text: 144PIN PC133 Unbuffered SO-DIMM 256MB With 16MX16 CL3 TS32MSS64V6G Pin Identification Description The TS32MSS64V6G Dynamic RAM TS32MSS64V6G is a high-density consists 32Mx64 memory of 8 Synchronous module. pieces of The Symbol CMOS Function A0~A12 Address inputs
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144PIN
PC133
256MB
16MX16
TS32MSS64V6G
32Mx64
TS32MSS64V6G
JEP-108E
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IS42VS16100E
Abstract: 42VS16100E IS42VS16100E-75BLI
Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11
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IS42VS16100E
4000-mil
60-ball
400-mil
IS42VS16100E
42VS16100E
IS42VS16100E-75BLI
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP377P3323AT2-C1H/H 32M X 72 SDRAM DIMM with PLL & Register based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP377P3323AT2-C1H/H is a 32M bit X 72 Synchronous Dynamic RAM high density memory
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AMP377P3323AT2-C1H/H
AMP377P3323AT2-C1H/H
400mil
18-bits
168-pin
0022uF
100MHz
100MHz
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74605
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED16P664LS49-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AVED16P664LS49-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AVED16P664LS49-C75
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AVED16P664LS49-C75
AVED16P664LS49-C75
400mil
144-pin
144-pin
74605
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723AT2-C1H 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723AT2-C1H is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723AT2-C1H
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AMP366P1723AT2-C1H
AMP366P1723AT2-C1H
400mil
168-pin
100MHz
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1623BTE-C75/H 16M X 64 SDRAM DIMM, Unbuffered, based on 8M X 8, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1623BTE-C75/H is a 16M bit X 64 Synchronous Dynamic RAM high density memory
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AMP366P1623BTE-C75/H
AMP366P1623BTE-C75/H
400mil
168-pin
168-pin6
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P1723AT2-C1L 16M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P1723AT2-C1L is a 16M bit X 72 Synchronous Dynamic
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AMP374P1723AT2-C1L
AMP374P1723AT2-C1L
400mil
168-pin
168-MHz
100MHz
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AVED8P664LS48-C75
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AVED8P664LS48-C75 8M X 64 SDRAM SODIMM based on 4M X 16, 4 Banks, 4K Refresh, 3.3V Synchronous DRAMS with SPD DESCRIPTION AVED Memory Products AVED8P664LS48-C75 is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The
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AVED8P664LS48-C75
AVED8P664LS48-C75
400mil
144-pin
non-256M
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP366P1723BT2-C75 16M X 64 SDRAM DIMM based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP366P1723BT2-C75 is a 16M bit X 64 Synchronous Dynamic RAM high density memory module. The AVED Memory Products AMP366P1723BT2-C75
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AMP366P1723BT2-C75
AMP366P1723BT2-C75
400mil
168-pin
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: AVED MEMORY PRODUCTS Where Quality & Memory Merge AMP374P3323CT2-C75 32M X 72 SDRAM DIMM with ECC based on 16M X 8, 4 Banks, 4K REFRESH, 3.3V Synchronous DRAMs WITH SPD DESCRIPTION AVED Memory Products AMP374P3323CT2-C75 is a 32M bit X 72 Synchronous Dynamic
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AMP374P3323CT2-C75
AMP374P3323CT2-C75
400mil
168-pin
100MHz
PC100
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Untitled
Abstract: No abstract text available
Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm
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AS4DDR232M72PBG
32Mx72
AS4DDR232M72PBG
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dynamic ram binary cell
Abstract: QBA-1 qab1
Text: VIS Preliminary VG36643241AT CMOS Synchronous Dynamic RAM Description The device is CMOS Synchronous Dynamic RAM organized as 524,288 words x 32 bits x 4 banks. it is fabricated with an advanced submicron CMOS technology and designed to operate from a singly 3.3V only
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VG36643241AT
86-pin
1G5-0172
dynamic ram binary cell
QBA-1
qab1
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K4S643233H
Abstract: K4S643233H-F
Text: K4S643233H - F H E/N/G/C/L/F Mobile-SDRAM 512K x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 3.0V & 3.3V power supply. The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits,
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K4S643233H
32Bit
90FBGA
K4S643233H-F
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F5401
Abstract: io 1207 100MHZ 54-PIN F5402
Text: PRELIMINARY SPACE ELECTRONICS INC. 1 GIGABIT SYNCHRONOUS DRAM SPACE PRODUCTS VDD 1 97SD10004RP 54 VSS CS 7 NC VDDQ VSSQ CS 6 NC DQ0 DQ3 VSSQ VDDQ CS 5 NC CS 4 NC VDDQ VSSQ CS 3 NC DQ1 DQ2 VSSQ VDDQ CS 2 VDD VSS CS 1 NC/RFU WE DQM NC/A13 CAS CLK RAS CKE CS 0
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97SD10004RP
NC/A13
NC/A12
A10/AP
99Rev0
F5401
io 1207
100MHZ
54-PIN
F5402
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54-TSOP
Abstract: K4S511632B M366S2953BTS-C7A M366S3354BTS-C7A M366S6553BTS-C7A M374S2953BTS-C7A M374S6553BTS-C7A
Text: 256MB, 512MB, 1GB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 512Mb B-die 62/72-bit Non ECC/ECC Revision 1.1 February 2004 * Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004
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256MB,
512MB,
168pin
512Mb
62/72-bit
54-TSOP
K4S511632B
M366S2953BTS-C7A
M366S3354BTS-C7A
M366S6553BTS-C7A
M374S2953BTS-C7A
M374S6553BTS-C7A
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K4S28323LF
Abstract: K4S28323LF-F
Text: K4S28323LF - F H E/N/S/C/L/R Mobile-SDRAM 1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA FEATURES GENERAL DESCRIPTION • 2.5V power supply. The K4S28323LF is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 32 bits,
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K4S28323LF
32Bit
90FBGA
K4S28323LF-F
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M366S6453DTS
Abstract: No abstract text available
Text: M366S6453DTS PC133/PC100 Unbuffered DIMM M366S6453DTS SDRAM DIMM 64Mx64 SDRAM DIMM based on 32Mx8, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung M366S6453DTS is a 64M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung
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M366S6453DTS
PC133/PC100
M366S6453DTS
64Mx64
32Mx8,
400mil
168-pin
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M366S0924ETS-C7A
Abstract: M366S1723ETS-C7A M366S1723ETU-C7A M366S3323ETS-C7A M366S3323ETU-C7A M374S1723ETS-C7A M374S1723ETU-C7A
Text: 64MB, 128MB, 256MB Unbuffered DIMM SDRAM SDRAM Unbuffered Module 168pin Unbuffered Module based on 128Mb E-die 62/72-bit Non ECC/ECC Revision 1.3 February. 2004 Rev. 1.3 February 2004 64MB, 128MB, 256MB Unbuffered DIMM SDRAM Revision History Revision 1.0 November., 2002
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128MB,
256MB
168pin
128Mb
62/72-bit
M366S0924ETS-C7A
M366S1723ETS-C7A
M366S1723ETU-C7A
M366S3323ETS-C7A
M366S3323ETU-C7A
M374S1723ETS-C7A
M374S1723ETU-C7A
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TM4SN64EPN10
Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •
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TM2SN64EPN
64-BIT
TM4SN64EPN
SMMS696
TM2SN64EPN.
TM4SN64EPN
66-MHz
168-Pin
TM4SN64EPN10
TM2SN64EPN-10
TM48N64EPN
TM4SN64EPN-10
TMS626812
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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